FM1100-M [PACELEADER]
SILICON EPITAXIAL PLANCE TYPE; 硅外延PLANCE TYPE
| 型号： | FM1100-M |
| 厂家： | 
PACELEADER INDUSTRIAL |
| 描述： | SILICON EPITAXIAL PLANCE TYPE |
| 文件： | 总2页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FM120-M thru FM1150-M
SSIILLIICCOONN EEPPIITTAAXXIIAALL PPLLAANNCCEE TTYYPPEE
SOD-123
0.154(3.9)
0.012(0.3) Typ.
0.138(3.5)
0.071(1.8)
0.055(1.4)
0.126(3.2)
0.110(2.8)
0.067(1.7)
0.051(1.3)
0.035(0.9) Typ.
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
FEATURES
MECHANICAL DATA
Plastic package has Underwriters Laboratory
Flammability classification 94V-0 Utilizing Fame
Retardant Epoxy Molding Compound
For surface mount applications
Case Molded plastic, SOD-123/MINI-SMA
Terminals Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity Indicated by cathode band
Mounting Position Any
Exceeds environmental standards of MIL-S-19500/228
Low leakage current.
Weight 0.04grams
o
MAXIMUM RATINGS (at TA=25 C unless otherwise noted)
Typ.
PARAMETER
CONDITIONS
SYMBOL
Min.
Max.
1.0
UNITS
A
Forward rectified current
IO
See Fig.1
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
Forward surge current
A
IFSM
30
0
mA
mA
0.5
10
VR=VRRM TA=25 C
Reverse current
IR
0
VR=VRRM TA=100 C
0
RJA
CJ
98
C / W
Thermal resistance
Junction to ambient
pF
Diode junction capacitance F=1MHz and applied 4vDC reverse voltage
Storage temperature
120
0
TSTG
-55
+150
C
*1
*2
*3
*4
Operating Temperature
VRRM
VRMS
VR
VF
SYMBOLS
MARKING CODE
0
( C)
(V)
(V)
(V)
(V)
FM120-M
FM130-M
FM140-M
FM150-M
FM160-M
FM180-M
FM1100-M
FM1150-M
12
13
14
15
16
18
10
115
20
30
14
21
28
35
42
56
70
105
20
30
0.5
-55 to + 125
40
40
50
50
0.7
60
60
80
80
-55 to + 150
0.85
100
150
100
150
0.92
*1 Repetitive peak reverse peak reverse
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
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FM120-M thru FM1150-M
SSIILLIICCOONN EEPPIITTAAXXIIAALL PPLLAANNCCEE TTYYPPEE
RATING AND CHARACTERISTICS CURVES FM120-M THRU FM1150-M
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
1.2
1.0
0.8
0.6
50
10
3.0
1.0
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
.01
24
.1
.3
.5
.7
.9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
18
8.3ms Single Half
Tj=25 C
Sine Wave
12
JEDEC method
6
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
0
50
1
5
10
100
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
10
350
300
250
200
1.0
Tj=75 C
150
100
50
.1
Tj=25 C
0
.01
.01
.05
.1
.5
1
5
10
50
100
0
20 40 60 80 100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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