PKN2643 [PACELEADER]
P-Ch 20V Fast Switching MOSFETs;
| 型号： | PKN2643 |
| 厂家： | 
PACELEADER INDUSTRIAL |
| 描述： | P-Ch 20V Fast Switching MOSFETs |
| 文件： | 总5页 (文件大小：1311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PKN2643
P-Ch 20V Fast Switching MOSFETs
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
-20V
100mΩ
-3A
Description
SOT23 Pin Configuration
The PKN2643 is the high cell density trenched
P-ch MOSFETs, which provides excellent RDSON
and efficiency for most of the small power
switching and load switch applications.
The PKN2643 meet the RoHS and Green Product
requirement with full function reliability approved.
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
-20
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±12
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Pulsed Drain Current2
-3
-2.4
A
A
-12
A
PD@TA=25℃
TSTG
Total Power Dissipation3
1
W
℃
℃
Storage Temperature Range
-55 to 150
-55 to 150
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
125
80
Unit
℃/W
℃/W
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
RθJC
---
1
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1
PKN2643
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-20
---
Typ.
---
Max.
---
Unit
BVDSS
Drain-Source Breakdown Voltage
V
VGS=-4.5V , ID=-3A
---
100
RDS(ON)
VGS(th)
IDSS
Static Drain-Source On-Resistance2
Gate Threshold Voltage
m
V
VGS=-2.5V , ID=-2A
---
-0.3
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
-0.5
---
120
-1.0
-1
VGS=VDS , ID =-250uA
VDS=-16V , VGS=0V , TJ=25℃
VDS=-16V , VGS=0V , TJ=55℃
Drain-Source Leakage Current
uA
---
-5
VGS=±12V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
---
±100
---
nA
S
VDS=-5V , ID=-3A
12.2
10.1
1.21
2.46
5.6
Qg
---
VDS=-15V , VGS=-4.5V , ID=-3A
nC
Qgs
Qgd
Td(on)
Tr
---
---
Turn-On Delay Time
Rise Time
---
VDD=-10V , VGS=-4.5V , RG=3.3
32.2
45.6
29.2
677
82
---
ns
ID=-3A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
---
Ciss
Coss
Crss
Input Capacitance
---
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
73
---
Diode Characteristics
Symbol
Parameter
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
Min.
---
Typ.
---
Max.
-3
Unit
A
IS
Continuous Source Current1,4
Diode Forward Voltage2
VSD
---
---
-1
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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2
PKN2643
P-Ch 20V Fast Switching MOSFETs
Typical Characteristics
165
140
115
90
12
ID=-3A
VGS=-5V
VGS=-4.5V
VGS=-3V
10
8
VGS=-2.5V
6
VGS=-1.8V
4
65
2
40
0
1
2
3
4
5
0
0.5
1
1.5
2
-VDS , Drain-to-Source Voltage (V)
-VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source Voltage
10
8
6
TJ=150℃
TJ=25℃
4
2
0
0
0.4
0.8
1.2
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.8
1.4
1
1.4
1.0
0.6
0.2
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
TJ ,Junction Temperature (℃ )
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
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PKN2643
P-Ch 20V Fast Switching MOSFETs
1000
100
10
100.00
10.00
1.00
Ciss
100us
10ms
Coss
Crss
100ms
1s
0.10
TA=25℃
DC
F=1.0MHz
Single Pulse
0.01
1
5
9
13
17
21
0.1
1
10
100
-VDS , Drain to Source Voltage (V)
-VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
TON
0.001 SINGLE PULSE
T
D = TON/T
TJpeak = TA + PDMx RθJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
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4
PKN2643
P-Ch 20V Fast Switching MOSFETs
Package Information ( SOT-23 )
5
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