US1D [PACELEADER]
SURFACE MOUNT REVERSE VOLTAGE 50 TO 1000 VOLTS; 表面贴装反向电压50到1000伏特
| 型号： | US1D |
| 厂家： | 
PACELEADER INDUSTRIAL |
| 描述： | SURFACE MOUNT REVERSE VOLTAGE 50 TO 1000 VOLTS |
| 文件： | 总2页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US1A thru US1M
SSUURRFFAACCEE MMOOUUNNTT RREEVVEERRSSEE VVOOLLTTAAGGEE 5500 TTOO 11000000 VVOOLLTTSS
ULTRA FAST RECTIFIERS FORWARD CURRENT - 1.0 AMPERES
SMA/DO-214AC
.055(1.40)
.062(1.60)
.098(2.50)
.114(2.90)
.157(4.00)
.181(4.60)
.006(.152)
.012(.305)
.078(2.00)
.096(2.44)
.030(0.76)
.060(1.52)
.004(.102)
.008(.203)
.188(4.80)
.208(5.28)
Dimensions in inches and (millimeters)
FEATURES
MECHANICAL DATA
Glass passivated chip
Case JEDEC DO-214AC molded plastic
Case Molded plastic
Ultra fast switching for high efflciency
For surface mount applications
Polarity Indicated by cathode band
Weight 0.002 ounce, 0.064grams
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material UL flammability classification 94V-0
o
High temperature soldering 260 C/10seconds at terminals
Pb free product are available 99% Sn above can meet RoHS
Environment substance directive request
MAXIMUM RATIXGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load
For capacitive load, derate current by 20%
SYMBOL US1A US1B US1D US1G US1J US1K US1M
UNITS
Volts
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
I(AV)
50
35
50
100
70
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
Volts
Maximum DC Blocking Voltage
Volts
100
1000
0
Amps
Maximum Average Forward Rectified Current @ TL =75 C
Peak Forward Surge Current 8.3ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Amps
Volts
A
IFSM
VF
IR
30
Maximum Forward Voltage at 1.0A DC
1.0
1.3
1.5
1.7
0
Maximum DC Reverse Current @TJ=25 C
10
0
at Rated DC Blocking Voltage @TJ=100 C
100
pF
nS
Maximum Reverse Recovery Time (NOTE 1)
Typical Junctionn Capacitance (NOTE 2)
Typical Thermal Resistance (NOTE 3)
Operating Temperature Rang
CJ
20
50
10
75
TRR
0
R
JC
30
C / W
0
TJ
TSTG
-55 to +150
-55 to +150
C
0
Storage Temperature Range
C
NOTES
1. Measured at 1 MHz and applied reverse Voltag of 4.0VDC
2. Rverse Recovery Test Condibons IF = 5A, IR = 1A, lRR = 25A
3. Thermal Resistance from Junction amblent and from Junction to lead 0.375 (9.5mm) P.C.B mounted
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1
US1A thru US1M
SSUURRFFAACCEE MMOOUUNNTT RREEVVEERRSSEE VVOOLLTTAAGGEE 5500 TTOO 11000000 VVOOLLTTSS
RATINGS AND CHARACTERISTIC CURVES US1A THRU US1M
Fig. 1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
Noninductive
t
rr
Noninductive
+0.5A
(
)
D.U.T.
(+)
PULSE
0
25 Vdc
(approx)
GENERATOR
NOTE 2
-0.25
(
)
1
(+)
OSCILLOSCOPE
NOTE 1
NON-
Inductive
NOTES:1. Rise Time=7ns max.
Input Impedance=1 megohm. 22pF
-1.0
SET TIME
BASE FOR
10ns/cm
1cm
2. Rise Time=10ns max.
Source Impedance=50 Ohms.
Fig. 2 - FORWARD CHARACTERISTICS
10
Fig. 3 - FORWARD CURRENT DERATING CURVE
US1A
2.0
SINGLE PHASE
HALF W AVE
US1G
US1M
TYPICAL
60HZ
1.0
RESISTIVE OR
INDUCTIVE LOAD
P.C.B MOUNTED
ON 0.315x0.315"(8.0x8.0mm)
COPPER PAD AREAS
1.0
0
=25 C
J
T
0.1
25 50 75 100 125 150 175
.01
o
LEAD TEMPERATURE, C
0
.2 .4
.6
.8 1.0 1.2 1.4
Fig. 4 - TYPICAL JUNCTION CAPACITANCE
Fig. 5 - PEAK FORWARD SURGE CURRENT
100
0
TJ=25C
f=1.0MHz
30
Vsig=50mVp-p
25
8.3ms SINGLE HALF SINCE-WAVE
JEDEC METHOD
10
20
15
10
1
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
5
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
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2
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