概述
数据手册PAM2306EN2YPBE 概述
Dual High-Efficiency PWM Step-Down DC-DC Coverter 双路高效率PWM降压型DC- DC Coverter
PAM2306EN2YPBE 数据手册
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PDF下载PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Features
General Description
The PAM2306 is a dual step-down current-mode,
DC-DC converter. At heavy load, the constant-
frequency PWM control performs excellent
stability and transient response. To ensure the
longest battery life in portable applications, the
n
Efficiency up to 96%
n Only 40μA (Typ. per Channel) Quiescent
Current
n Output Current: Up to 1A per Channel
n Internal Synchronous Rectifier
n 1.5MHz Switching Frequency
n Soft Start
PAM2306 provides
a power-saving Pulse-
Skipping Modulation (PSM) mode to reduce
quiescent current under light load operation.
n Under-Voltage Lockout
n Short Circuit Protection
The PAM2306 supports a range of input voltages
from 2.5V to 5.5V, allowing the use of a single
Li+/Li-polymer cell, multiple Alkaline/NiMH cell,
USB, and other standard power sources. The dual
output voltages are available for 3.3V, 2.8V, 2.5V,
1.8V, 1.5V, 1.2V or adjustable. All versions
employ internal power switch and synchronous
rectifier for to minimize external part count and
realize high efficiency. During shutdown, the input
is disconnected from the output and the shutdown
current is less than 0.1ꢀA. Other key features
include under-voltage lockout to prevent deep
battery discharge.
n Thermal Shutdown
n Small 12L WDFN3x3 Package
n Pb-Free Package and RoHS Compliant
Applications
n
n
n
Cellular Phone
Portable Electronics
Personal Information Appliances
n Wireless and DSL Modems
n MP3 Players
Typical Application
C
OUT2
10ꢀF
L2
V
OUT2
V
PAM2306
IN2
1
2
12
CFW2
100pF
R21
VIN2
LX2
EN2
C
IN2
4 7ꢀF
11
10
9
NC2
FB2
3
GND
FB1
R12
4
GND
R22
8
5
6
C
IN1
NC1
EN1
LX1
4.7 ꢀF
7
CFw1
VIN1
V
IN1
R11
100 pF
L1
V
OUT1
C
OUT1
10ꢀF
Rx1
Rx2
V
OUTx
= V
REF
1+
)
(
Figure 1. Adjustable Voltage Regulator
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07/2008 Rev 1.0
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PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Typical Application
L2
VOUT2
VIN2
PAM2306
COUT2
1
2
12
VIN2
EN2
10μF
CIN2
4.7μF
11
10
9
LX2
GND
FB1
NC2
FB2
3
4
GND
8
5
6
CIN1
NC1
EN1
LX1
4.7μF
7
VIN1
VIN1
L1
VOUT1
COUT1
10μF
VOUTx = 1.2V,1.5V,1.8V,2.5V, 2.8V or 3.3V
Figure 2. Fixed Voltage Regulator
Block Diagram
VINx
+
IAMP
SLOPE
COMP
1.5M
OSC
-
PWM
COMP
OSC
FBx
MAIN
SWITCH(PCH)
S Q
FREQ
SHIFT
-
R1
R2
SWITCHING
LOGIC
AND
BLANKING
CIRCUIT
EA
+
R Q
LXx
ANTI-
SHOOT-
THRU
RS LATCH
COMP
SYNCHRONOUS
RECTIFIER(NCH)
VIN
ENx
0.6VREF
+
IRCMP
GND
SHUTDOWN
-
Power Analog Microelectronics,Inc
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07/2008 Rev 1.0
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PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Pin Configuration and Marking Information
TOP VIEW
WDFN-12L 3x3
v1: Output Voltage 1
v2: Output Voltage 2
(refer to “Ordering
Information”)
X: Internal Code
Y: Year
W: Week
VIN2
LX2
EN2
NC2
FB2
GND
LX1
12
11
10
9
1
2
3
4
5
6
GND
FB1
NC1
EN1
2306v1v2
XXXYW
8
7
VIN1
GND
(Exposed Pad)
Pin No.
Pin Name
VIN2
Pin Function
1
Power Input of Channel 2.
2
LX2
Pin for Switching of Channel 2.
3,9,
Ground.The exposed pad must be soldered to a large PCB and connected to
GND for maximum power dissipation.
Feedback of Channel 1.
GND
Exposed Pad
4
5,11
6
FB1
NC1,NC2
EN1
No Connection
Chip Enable of Channel 1 (Active High). V
Power Input of Channel 1.
≤V
EN1 IN1.
7
VIN1
LX1
8
Pin for Switching of Channel 1.
Feedback of Channel 2.
10
12
FB2
EN2
Chip Enable of Channel 2 (Active High). V ≤V
EN2 IN2.
Power Analog Microelectronics,Inc
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07/2008 Rev 1.0
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PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Absolute Maximum Ratings
These are stress ratings only and functional operation is not implied. Exposure to absolute
maximum ratings for prolonged time periods may affect device reliability. All voltages are with
respect to ground.
Input Voltage.................................-0.3V to 6.5V
En1, Fb1, Lx1, En2, Fb2 and LX2 Pin Voltage........
Junction Temperature................................150°C
Storage Temperature Range.......-65°C to 150°C
-0.3V to (VIN +0.3V) Soldering Temperature.....................260°C,10sec
Recommended Operating Conditions
Supply Voltage...............................2.5V to 5.5V
Ambient Temperature Range.........-40°C to 85°C
Junction Temperature Range.........-40°C to 125°C
Thermal Information
Parameter
Symbol
Package
WDFN 3x3-12
WDFN 3x3-12
WDFN 3x3-12
Maximum
Unit
°C/W
°C/W
W
Thermal Resistance (Junction to ambient)
Thermal Resistance (Junction to case)
Power Dissipation
θJA
θJC
PD
60
8.5
1.66
Power Analog Microelectronics,Inc
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07/2008 Rev 1.0
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PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Electrical Characteristic
TA=25OC, VIN=3.6V, VO=1.8V, CIN=10μF, CO=10μF, L=2.2μH, unless otherwise noted.
PARAMETER
Input Voltage Range
SYMBOL
VIN
Test Conditions
MIN
2.5
TYP MAX UNITS
5.5
V
V
Regulated Feedback Voltage
Reference Voltage Line Regulation
Regulated Output Voltage Accuary
Peak Inductor Current
VFB
0.588
0.6
0.3
0.612
ΔVFB
VO
%/V
%
IO = 100mA
-3
+3
IPK
VIN=3V,VFB = 0.5V or VO=90%
VIN = 2.5V to 5V, IO=10mA
IO=1mA to 1A
1.5
0.2
0.5
40
A
Output Voltage Line Regulation
Output Voltage Load Regulation
Quiescent Current (per channel)
Shutdown Current (per channel)
LNR
LDR
IQ
0.5
1.5
70
1
%/V
%
No load
μA
μA
MHz
kHz
Ω
ISD
VEN = 0V
0.1
1.5
500
0.3
0.35
0.01
96
VO = 100%
1.2
1.8
Oscillator Frequency
fOSC
VFB = 0V or VO = 0V
P MOSFET
IDS=100mA
N MOSFET
0.45
0.5
1
Drain-Source On-State Resistance
RDS(ON)
Ω
SW Leakage Current (per channel)
High Efficiency
ILSW
η
μA
%
EN Threshold High
VEH
VEL
IEN
1.5
V
EN Threshold Low
0.3
V
EN Leakage Current
Over Temperature Protection
OTP Hysteresis
0.01
150
30
μA
°C
°C
OTP
OTH
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PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Typical Performance Characteristics
TA=25°C, CIN=10μF, CO=10μF, L=4.7μH, unless otherwise noted.
Efficiency vs Output Current (Vo=1.2V)
Efficiency vs Output Current (Vo=1.5V)
100
90
80
70
60
50
40
30
20
100
90
80
70
60
50
40
30
20
10
0
2.5V
3.6V
4.2V
Vin=3.6V
Vin=4.2V
Vin=5V
1
10
100
1000
1
1
1
10
100
1000
Output Current(mA)
Output Current(mA)
Efficiency vs Output Current (Vo=1.8V)
Efficiency vs Output Current (Vo=2.5V)
100
90
80
70
60
50
40
30
20
100
90
80
70
60
50
40
30
20
3V
2.5V
3.6V
4.2V
3.6V
4.2V
1
10
100
1000
10
100
1000
Output Current(mA)
Output Current(mA)
Eifficiency VS Output Current (Vo=3.3V)
Efficiency vs Output Current (Vo=2.8V)
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
Vin=3.6V
Vin=4.2V
Vin=5V
3V
3.6V
4.2V
10
100
1000
1
10
100
1000
Output Current(mA)
Output Current(mA)
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PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Typical Performance Characteristics
TA=25°C, CIN=10μF, CO=10μF, L=4.7μH, unless otherwise noted.
Efficiency VS Input Voltage (Vo=1.2V)
Efficiency vs Input Voltage (Vo=1.5V)
100
90
80
70
60
50
40
30
100
90
80
70
60
50
40
30
10mA
Io=10mA
Io=100mA
Io=800mA
100mA
800mA
2.5
3
3.5
4
4.5
5
5.5
3
3.5
4
4.5
5
5.5
Input Voltage(V)
Input Voltage(V)
Efficiency vs Input Voltage (Vo=1.8V)
Efficiency vs Input Voltage (Vo=2.5V)
100
90
80
70
60
50
40
30
100
90
80
70
60
50
40
30
10mA
10mA
100mA
800mA
100mA
800mA
3
3.5
4
4.5
5
5.5
2.5
3
3.5
4
4.5
5
5.5
Input Voltage(V)
Input Voltage(V)
Eifficiency VS Input Voltage (Vo=3.3V)
Efficiency vs Input Voltage (Vo=2.8V)
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
10mA
Io=10mA
Io=100mA
Io=800mA
100mA
800mA
3.5 3.75
4
4.25 4.5 4.75
Input Voltage(V)
5
5.25 5.5
3
3.5
4
4.5
5
5.5
Input Voltage(V)
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PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Typical Performance Characteristics
TA=25°C, CIN=10μF, CO=10μF,L=4.7μH, unless otherwise noted.
Output Voltage VS Input Voltage
Reference Voltage VS Input Voltage
0.602
0.600
0.598
0.596
0.594
0.592
0.590
0.588
0.586
0.584
1.218
1.213
1.208
1.203
1.198
1.193
1.188
Vin=3.6V
Io=1mA
Io=500mA
Io=1A
I=100mA
I=600mA
I=800mA
2
3
4
5
6
2.5
3
3.5
4
4.5
5
5.5
Input Voltage(V)
Input Voltage(V)
Output Voltage VS Temperature
Reference Voltage VS Temperature
0.620
0.615
0.610
0.605
0.600
0.595
0.590
1.194
1.193
1.192
1.191
1.19
Vo=1.2V
Vin=3.6V
1.189
1.188
Io=100mA
20
40
60
80
100
120
140
0
50
100
150
Temperature(°C)
Temperature(°C)
Output Voltage VS Load Current
Vo=1.2V
Reference Voltage VS Load Current
0.603
0.600
0.598
0.595
0.593
0.590
0.588
0.585
0.583
0.580
1.218
1.213
1.208
1.203
1.198
1.193
1.188
Vin=2.7V
Vin=3.6V
Vin=4.2V
Vin=5V
Vin=2.7V
Vin=3.6V
Vin=4.2V
0
100 200 300 400 500 600 700 800 900 1000
Load Current(mA)
0
200
400
600
800
1000
Load Current(mA)
Power Analog Microelectronics,Inc
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PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Typical Performance Characteristics
TA=25OC, CIN=10μF, CO=10μF,L=4.7μH, unless otherwise noted.
Dynamic Supply Current VS Input Voltage
Dynamic Supply Current VS Temperature
60
50
40
30
20
10
0
50
45
40
35
30
25
20
15
10
5
Vo=1.2V
ILoad=0A
Vo=1.2V
Vin=3.6V
ILoad=0A
0
40
60
80
100
120
140
2.5
3
3.5
4
4.5
5
5.5
Temperature(°C)
Input Voltage(V)
Rdson VS Temperature
Vin=3.6V
Rdson VS Input Voltage
0.6
0.5
0.4
0.3
0.2
0.1
0
0.4
0.35
0.3
Vin=3.6V
0.25
0.2
Vin=4.2V
Vin=3.6V
Vin=2.7V
0.15
0.1
2
3
4
5
6
20
70
Temperature(°C)
120
Input Voltage(V)
Oscillator Frequency VS Temperature
Vin=3.6V
Oscillator Frequency VS Supply Voltage
Vin=3.6V
1.58
1.56
1.54
1.52
1.50
1.8
1.7
1.6
1.5
1.4
1.3
1.2
20
40
60
80
100
120
140
2
3
4
5
Supply Voltage(V)
Temperature(°C)
Power Analog Microelectronics,Inc
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07/2008 Rev 1.0
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PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Typical Performance Characteristics
TA=25°C,CIN=10μF, CO=10μF,L=4.7μH, unless otherwise noted.
Load Transient
Io=0-500mA Vo=3.3V Vin=5V
Load Transient
Io=0-1A Vo=1.2V Vin=3.6V
Output
Current
Output
Current
Voltage
Output
Voltage
Output
Start-up from Shutdown
Vo=1.8V,Vin=3.6V
Voltage
Output
Enable
Inductor
Current
Power Analog Microelectronics,Inc
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PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Application Information
The basic PAM2306 application circuit is shown
in Page 1. External component selection is
determined by the load requirement, selecting L
first and then Cin and Cout.
The selection of Cout is driven by the required
effective series resistance (ESR).
Typically, once the ESR requirement for Cout
has been met, the RMS current rating generally
far exceeds the IRIPPLE(P-P) requirement. The
output ripple △Vout is determined by:
Inductor Selection
For most applications, the value of the inductor
will fall in the range of 1μH to 4.7μH. Its value is
chosen based on the desired ripple current.
Large value inductors lower ripple current and
small value inductors result in higher ripple
currents. Higher VIN or Vout also increases the
ripple current as shown in equation 1. A
reasonable starting point for setting ripple
current is △IL = 400mA (40% of 1A).
1
æ
ö
VVOUT @VI
L
ESR+
ç
è
÷
ø
8fCOUT
Where f = operating frequency, COUT=output
capacitance and ΔIL = ripple current in the
inductor. For a fixed output voltage, the output
ripple is highest at maximum input voltage since
ΔIL increases with input voltage.
1
V
OUT
æ
ö
(1)
DIL =
V
OUT 1-
ç
Using Ceramic Input and Output Capacitors
÷
ø
f
L
V
IN
( )( )
è
Higher values, lower cost ceramic capacitors are
now becoming available in smaller case sizes.
Their high ripple current, high voltage rating and
low ESR make them ideal for switching regulator
applications. Using ceramic capacitors can
achieve very low output ripple and small circuit
size.
The DC current rating of the inductor should be
at least equal to the maximum load current plus
half the ripple current to prevent core saturation.
Thus, a 1.4A rated inductor should be enough for
most applications (1A + 400mA). For better
efficiency, choose a low DC-resistance inductor.
When choosing the input and output ceramic
capacitors, choose the X5R or X7R dielectric
formulations. These dielectrics have the best
temperature and voltage characteristics of all
the ceramics for a given value and size.
Vo
L
1.2V
1.5V
1.8V
2.5V
3.3V
2.2μH
2.2μH
2.2μH
4.7μH
4.7μH
CIN and COUT Selection
Thermal consideration
In continuous mode, the source current of the top
MOSFET is a square wave of duty cycle
Vout/Vin. To prevent large voltage transients, a
low ESR input capacitor sized for the maximum
RMS current must be used. The maximum RMS
capacitor current is given by:
Thermal protection limits power dissipation in
the PAM2306. When the junction temperature
exceeds 150°C, the OTP (Over Temperature
Protection) starts the thermal shutdown and
turns the pass transistor off. The pass transistor
r e s u m e s o p e r a t i o n a f t e r t h e j u n c t i o n
temperature drops below 120°C.
éVOUT
V
(
IN - VOUT ù1
2
)
û
ë
CIN required IRMS @ IOMAX
V
IN
For continuous operation, the junction
temperature should be maintained below 125°C.
The power dissipation is defined as:
This formula has a maximum at VIN =2Vout,
where IR M S =IO U T /2. This simple worst-case
condition is commonly used for design because
even significant deviations do not offer much
relief. Note that the capacitor manufacturer's
ripple current ratings are often based on 2000
hours of life. This makes it advisable to further
derate the capacitor, or choose a capacitor rated
at a higher temperature than required. Consult
the manufacturer if there is any question.
VORDSONH + V -V
(
R
)
DSONL
IN
O
2
P =IO
+ tSWF I +IQ V
S O IN
(
)
D
V
IN
IQ is the step-down converter quiescent current.
The term tsw is used to estimate the full load
step-down converter switching losses.
Power Analog Microelectronics,Inc
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PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
For the condition where the step-down converter
is in dropout at 100% duty cycle, the total device
dissipation reduces to:
100% Duty Cycle Operation
As the input voltage approaches the output
voltage, the converter turns the P-channel
transistor continuously on. In this mode the
output voltage is equal to the input voltage minus
the voltage drop across the P - channel
transistor:
2
P =IO RDSONH +IQV
D
IN
Since RDS(ON), quiescent current, and switching
losses all vary with input voltage, the total losses
should be investigated over the complete input
voltage range. The maximum power dissipation
depends on the thermal resistance of IC
package, PCB layout, the rate of surrounding
airflow and temperature difference between
junction and ambient. The maximum power
dissipation can be calculated by the following
formula:
VOUT = VIN – ILOAD (Rdson + RL)
where Rdson = P-channel switch ON resistance,
= Output current, RL = Inductor DC
ILOAD
resistance
UVLO and Soft-Start
TJ(MAX) -TA
The reference and the circuit remain reset until
the VIN crosses its UVLO threshold.
P =
D
θJA
Where TJ(max) is the maximum allowable
junction temperature 125°C.TA is the ambient
temperature and θJA is the thermal resistance
from the junction to the ambient. Based on the
standard JEDEC for a two layers thermal test
board, the thermal resistance θJA of DFN3X3 is
60°C/W. The maximum power dissipation at TA =
25°C can be calculated by following formula:
The PAM2306 has an internal soft-start circuit
that limits the in-rush current during start-up.
This prevents possible voltage drops of the input
voltage and eliminates the output voltage
overshoot. The soft-start acts as a digital circuit
to increase the switch current in several steps to
the P-channel current limit (1500mA).
Short Circuit Protection
PD=(125°C-25°C)/60°C/W=1.66W
The switch peak current is limited cycle-by-cycle
to a typical value of 1500mA. In the event of an
output voltage short circuit, the device operates
with a frequency of 400kHz and minimum duty
cycle, therefore the average input current is
typically 200mA.
Setting the Output Voltage
The internal reference is 0.6V (Typical). The
output voltage is calculated as below:
R1
R2
æ
ö
Thermal Shutdown
V
O
=0.6×1+
è
ç
÷
ø
When the die temperature exceeds 150°C, a
reset occurs and the reset remains until the
temperature decrease to 120°C, at which time
the circuit can be restarted.
The output voltage is given by Table 1.
Table 1: Resistor selection for output voltage
setting
Vo
R1
R2
1.2V
1.5V
1.8V
2.5V
3.3V
100k
150k
200k
380k
540k
100k
100k
100k
120k
120k
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PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
PCB Layout Check List
When laying out the printed circuit board, the following checklist should be used to ensure proper
operation of the PAM2306. These items are also illustrated graphically in Figure 1. Check the following in
your layout:
1. The power traces, consisting of the GND trace, the SW trace and the VIN trace should be kept short,
direct and wide.
2. Does the FB pin connect directly to the feedback resistors? The resistive divider R1/R2 must be con-
nected between the (+) plate of COUT and ground.
3. Does the (+) plate of CIN connect to VIN as closely as possible? This capacitor provides the AC
current to the internal power MOSFETs.
4. Keep the switching node, SW, away from the sensitive FB node.
5. Keep the (–) plates of CIN and COUT as close as possible.
Top
Bottom
Figure 1 :PAM2306 Suggested Layout
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PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Ordering Information
PAM 2306 X X X v1 v2
Output Voltage 2
Output Voltage 1
Number of Pins
Package Type
Pin Configuration
Output Voltage
Pin Configuration
Package Type
Number of Pins
v1
v2
A Type
Y: WDFN 3x3
P: 12
K: 3.3V
H: 2.8V
G: 2.5V
E: 1.8V
C: 1.5V
B: 1.2V
A: Adj
K: 3.3V
H: 2.8V
G: 2.5V
E: 1.8V
C: 1.5V
B: 1.2V
A: Adj
1. VIN2
2. LX2
3. GND
4. FB1
5. NC1
6. EN1
7. VIN1
8. LX1
9. GND
10. FB2
11: NC2
12 :EN2
Part Number
Marking
Package Type
Standard Package
3,000 Units/Tape&Reel
2306v1v2
XXXYW
PAM2306AYPv1v2
WDFN3x3-12
Power Analog Microelectronics,Inc
www.poweranalog.com
07/2008 Rev 1.0
14
PAM2306
Dual High-Efficiency PWM Step-Down DC-DC Coverter
Outline Dimensions
3x3 mm WDFN 12
2
1
1
2
DETAIL A
Pin #1 ID and Tie Bar Mark Options
Note :The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A3
b
0.700
0.000
0.175
0.150
2.950
2.300
2.950
1.400
0.800
0.050
0.250
0.250
3.050
2.650
3.050
1.750
0.028
0.000
0.007
0.006
0.116
0.091
0.116
0.055
0.031
0.002
0.010
0.010
0.120
0.104
0.120
0.069
D
D2
E
E2
e
0.450
0.018
L
0.350
0.450
0.014
0.018
Power Analog Microelectronics,Inc
www.poweranalog.com
07/2008 Rev 1.0
15
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