2SC4715T [PANASONIC]

Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, NS-B1, 3 PIN;


型号：	2SC4715T
厂家：	PANASONIC
描述：	Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, NS-B1, 3 PIN 放大器晶体管
文件：	总3页 (文件大小：69K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Transistors

2SC4715

Silicon NPN epitaxial planar type

For low-frequency high breakdown voltage amplification

Unit: mm

4.0 0.2

2.0 ^0.2

■ Features

• Satisfactory linearity of forward current transfer ratio h_FE

• High collector-emitter voltage (Base open) V_CEO

• Small collector output capacitance (Common base, input open cir-

cuited) C_ob

0.75 max.

■ Absolute Maximum Ratings T_a= 25°C

+0.20

0.45

Parameter

Symbol

Rating

Unit

–0.10

+0.20

0.45

–0.10

(2.5) (2.5)

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

150

0.7 ^0.1

150

1: Emitter

2: Collector

3: Base

Collector current

I_C

I_CP

P_C

T_j

°C

NS-B1 Package

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

100

300

150

T_stg

−55 to +150

°C

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CEO

V_EBO

I_CBO

Conditions

Min

150

Typ

Max

Unit

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Forward current transfer ratio ^*

Collector-emitter saturation voltage

Transition frequency

I_C= 100 µA, I_B= 0

I_E= 10 µA, I_C= 0

V_CB= 100 V, I_E= 0

V_CE= 5 V, I_C= 10 mA

µA



h_FE

450

V_CE(sat)I_C= 30 mA, I_B= 3 mA

f_T

V_CB= 10 V, I_E= −10 mA, f = 200 MHz

V_CB= 10 V, I_E= 0, f = 1 MHz

160

150

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Noise voltage

V_CE= 10 V, I_C= 1 mA, G_V= 80 dB

R_g= 100 kΩ, Function = FLAT

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE

90 ∼ 155

130 ∼ 220

185 ∼ 330

260 ∼ 450

Publication date: February 2003

SJC00167BED

2SC4715

P_C T_a

I_C V_CE

V_CE(sat) I_C

500

400

300

200

100

180

150

120

I_C/ I_B= 10

T_a= 25°C

I_B= 10 mA

9 mA

8 mA

7 mA

6 mA

5 mA

4 mA

3 mA

T_a= 75°C

−25°C

25°C

0.1

2 mA

1 mA

0.01

0.001

120

160

100

1000

(

)

(

)

Ambient temperature T_a°C

Collector-emitter voltage V_CE

(

)

Collector current I_CmA

h_FE I_C

C_ob V_CB

300

250

200

150

100

f = 1 MHz

I_E= 0

T_a= 25°C

V_CE= 5 V

T_a= 75°C

25°C

−25°C

100

1000

(

)

(

)

Collector-base voltage V_CB

Collector current I_CmA

SJC00167BED

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government

if any of the products or technologies described in this material and controlled under the "Foreign

Exchange and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteris-

tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-

tual property right or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the

product or technologies as described in this material.

(4) The products described in this material are intended to be used for standard applications or general

electronic equipment (such as office equipment, communications equipment, measuring instru-

ments and household appliances).

Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,

combustion equipment, life support systems and safety devices) in which exceptional quality and

reliability are required, or if the failure or malfunction of the products may directly jeopardize life or

harm the human body.

• Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without

notice for modification and/or improvement. At the final stage of your design, purchasing, or use of

the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that

the latest specifications satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-

mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-

wise, we will not be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of

incidence of break down and failure mode, possible to occur to semiconductor products. Measures

on the systems such as redundant design, arresting the spread of fire or preventing glitch are

recommended in order to prevent physical injury, fire, social damages, for example, by using the

products.

(7) When using products for which damp-proof packing is required, observe the conditions (including

shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets

are individually exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL

2SC4715T [PANASONIC]

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