2SC5294 [PANASONIC]

For horizontal deflection output; 水平偏转输出
2SC5294
型号: 2SC5294
厂家: PANASONIC    PANASONIC
描述:

For horizontal deflection output
水平偏转输出

晶体 晶体管 功率双极晶体管 开关 局域网
文件: 总2页 (文件大小:40K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Power Transistors  
2SC5294, 2SC5294A  
Silicon NPN triple diffusion mesa type  
For horizontal deflection output  
Unit: mm  
15.5±0.5  
3.0±0.3  
5°  
φ3.2±0.1  
Features  
5°  
High breakdown voltage, and high reliability through the use of a  
glass passivation layer  
High-speed switching  
5°  
5°  
Wide area of safe operation (ASO)  
5°  
4.0  
2.0±0.2  
1.1±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
0.7±0.1  
Parameter  
Symbol  
Ratings  
1500  
1600  
1500  
1600  
600  
Unit  
5.45±0.3  
5.45±0.3  
Collector to  
2SC5294  
2SC5294A  
2SC5294  
2SC5294A  
VCBO  
V
base voltage  
Collector to  
base voltage  
5°  
VCES  
V
1
2
3
1:Base  
2:Collector  
3:Emitter  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
VCEO  
VEBO  
ICP  
V
V
A
A
A
5
TOP–3E Full Pack Package  
30  
IC  
20  
Base current  
IB  
10  
Collector power TC=25°C  
120  
PC  
W
dissipation  
Ta=25°C  
3.5  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
Conditions  
min  
typ  
max  
50  
50  
1
Unit  
2SC5294  
2SC5294A  
2SC5294  
2SC5294A  
VCB = 1000V, IE = 0  
µA  
Collector cutoff  
ICBO  
current  
VCB = 1500V, IE = 0  
VCB = 1600V, IE = 0  
VEB = 5V, IC = 0  
VCE = 5V, IC = 10A  
IC = 10A, IB = 2.8A  
IC = 10A, IB = 2.8A  
VCE = 10V  
mA  
1
Emitter cutoff current  
IEBO  
hFE  
50  
12  
3
µA  
Forward current transfer ratio  
5
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
V
V
1.5  
Transition frequency  
Storage time  
fT  
tstg  
tf  
3
MHz  
µs  
1.5  
0.12  
2.5  
0.2  
IC = 12A, IB1 = 2.4A, IB2 = –4.8A  
Fall time  
µs  
1
Power Transistors  
2SC5294, 2SC5294A  
PC — Ta  
Area of safe operation (ASO)  
Area of safe operation, horizontal operation ASO  
250  
100  
50  
f=64kHz, TC<90˚C  
ICP  
IC  
t=100µs  
(1) TC=Ta  
(2) With a 100 × 100 × 2mm  
Al heat sink  
(PC=12W)  
(3) Without heat sink  
(PC=3.5W)  
Area of safe operation with  
respect to the single pulse  
overload curve at the time of  
switching ON, shutting down  
by the high voltage spark,  
holding down and like that,  
during horizontal operation.  
10ms  
DC  
1ms  
200  
150  
100  
50  
10  
1
40  
30  
20  
10  
0
(1)  
0.1  
0.01  
(3)  
Non repetitive pulse  
TC=25˚C  
(2)  
<1mA  
0
0.001  
0
20 40 60 80 100 120 140 160  
1
3
10  
30  
100 300 1000  
0
500  
1000  
1500  
2000  
(
)
( )  
V
( )  
Collector to emitter voltage VCE V  
Ambient temperature Ta ˚C  
Collector to emitter voltage VCE  
2

相关型号:

2SC5294A

For horizontal deflection output
PANASONIC

2SC5295

Silicon NPN epitaxial planer type(For 2 GHz band low-noise amplification)
PANASONIC

2SC5295G

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
PANASONIC

2SC5295GQ

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
PANASONIC

2SC5295GR

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
PANASONIC

2SC5295J

For 2 GHz Band Low-Noise Amplification
PANASONIC

2SC5295JQ

暂无描述
PANASONIC

2SC5295JR

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, SSMINI3-F1, SC-89, 3 PIN
PANASONIC

2SC5295Q

TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-416
PANASONIC

2SC5295R

TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-416
PANASONIC

2SC5295S

TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-416
PANASONIC

2SC5296

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
SANYO