2SD0662B [PANASONIC]

For High Breakdown Voltage General Amplification; 对于高击穿电压一般放大
2SD0662B
元器件型号: 2SD0662B
生产厂家: PANASONIC SEMICONDUCTOR    PANASONIC SEMICONDUCTOR
描述和应用:

For High Breakdown Voltage General Amplification
对于高击穿电压一般放大

PDF文件: 总3页 (文件大小:72K)
下载文档:  下载PDF数据表文档文件
型号参数:2SD0662B参数

2SD0662B(2SD662B)

小信号デバイス - 小信号トランジスタ - 汎用低周波増幅

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19 ETC

2SD0662BP

TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 70MA I(C) | SC-71

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7 ETC

2SD0662BQ

TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 70MA I(C) | SC-71

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6 ETC

2SD0662BR

TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 70MA I(C) | SC-71

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9 ETC

2SD0662P

TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 70MA I(C) | SC-71

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9 ETC

2SD0662Q

TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 70MA I(C) | SC-71

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9 ETC

2SD0662R

TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 70MA I(C) | SC-71

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8 ETC

2SD0814

Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

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19 PANASONIC

2SD0814/2SD0814A(2SD814/2SD814A)

2SD0814. 2SD0814A (2SD814. 2SD814A) - NPN Transistor

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14 ETC

2SD0814A

For High Breakdown Voltage Low-Frequency And Low-Noise

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18 PANASONIC

2SD0814A

Small Signal Bipolar Transistor, 0.05A I(C), 185V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN

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0 PANASONIC

2SD0814A(2SD814A)

小信号デバイス - 小信号トランジスタ - 汎用低周波増幅

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5 ETC

2SD0814A|2SD814A

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

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7 ETC

2SD0814AQ

TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346

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6 ETC

2SD0814AQ

Small Signal Bipolar Transistor, 0.05A I(C), 185V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN

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0 PANASONIC