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2SD1276

更新时间：2024-09-18 02:18:50
品牌：PANASONIC
描述：Silicon NPN triple diffusion planar type Darlington(For power amplification)

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2SD1276 概述

Silicon NPN triple diffusion planar type Darlington(For power amplification) 硅NPN三重扩散平面型达林顿（对于功率放大） 功率双极晶体管

2SD1276 规格参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.75
Is Samacsys：N外壳连接：ISOLATED
最大集电极电流 (IC)：4 A集电极-发射极最大电压：60 V
配置：DARLINGTON WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：1000
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN最大功率耗散 (Abs)：2 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：20 MHz
Base Number Matches：1

2SD1276 数据手册

通过下载2SD1276数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Power Transistors  
2SD1276, 2SD1276A  
Silicon NPN triple diffusion planar type Darlington  
For power amplification  
Unit: mm  
10.0±0.2  
5.5±0.2  
4.2±0.2  
2.7±0.2  
Complementary to 2SB950 and 2SB950A  
Features  
High foward current transfer ratio hFE  
■
●
φ3.1±0.1  
●
High-speed switching  
●
Full-pack package which can be installed to the heat sink with  
one screw  
1.3±0.2  
1.4±0.1  
Absolute Maximum Ratings (T =25˚C)  
■
C
Parameter  
Symbol  
Ratings  
Unit  
0.5 +–00..12  
0.8±0.1  
Collector to  
2SD1276  
2SD1276A  
2SD1276  
60  
VCBO  
V
base voltage  
Collector to  
80  
2.54±0.25  
60  
5.08±0.5  
VCEO  
V
1
2
3
emitter voltage 2SD1276A  
Emitter to base voltage  
Peak collector current  
Collector current  
80  
1:Base  
2:Collector  
3:Emitter  
TO–220 Full Pack Package(a)  
VEBO  
ICP  
5
V
A
A
8
IC  
4
Internal Connection  
Collector power TC=25°C  
40  
C
E
PC  
W
dissipation  
Ta=25°C  
2
B
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
■
C
Parameter  
Collector cutoff  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
200  
200  
500  
500  
2
Unit  
2SD1276  
2SD1276A  
2SD1276  
2SD1276A  
VCB = 60V, IE = 0  
µA  
current  
VCB = 80V, IE = 0  
VCE = 30V, IB = 0  
VCE = 40V, IB = 0  
VEB = 5V, IC = 0  
Collector cutoff  
current  
ICEO  
IEBO  
VCEO  
hFE1  
µA  
mA  
V
Emitter cutoff current  
Collector to emitter 2SD1276  
voltage 2SD1276A  
60  
80  
IC = 30mA, IB = 0  
VCE = 3V, IC = 0.5A  
VCE = 3V, IC = 3A  
1000  
2000  
Forward current transfer ratio  
*
hFE2  
10000  
I
C = 3A, IB = 12mA  
2
4
Collector to emitter saturation voltage VCE(sat)  
V
IC = 5A, IB = 20mA  
VCE = 3V, IC = 3A  
Base to emitter voltage  
Transition frequency  
Turn-on time  
VBE  
fT  
2.5  
V
MHz  
µs  
V
CE = 10V, IC = 0.5A, f = 1MHz  
20  
0.5  
4
ton  
tstg  
tf  
IC = 3A, IB1 = 12mA, IB2 = –12mA,  
VCC = 50V  
Storage time  
µs  
Fall time  
1
µs  
*hFE2 Rank classification  
Rank  
hFE2  
Q
P
2000 to 5000 4000 to 10000  
1
Power Transistors  
2SD1276, 2SD1276A  
PC — Ta  
IC — VCE  
IC — VBE  
50  
10  
8
10  
TC=25˚C  
VCE=3V  
(1) TC=Ta  
(2) With a 100 × 100 × 2mm  
Al heat sink  
(3) With a 50 × 50 × 2mm  
Al heat sink  
(4) Without heat sink  
(PC=2W)  
(1)  
IB=4.0mA  
40  
30  
20  
10  
0
8
6
4
2
0
3.5mA  
3.0mA  
2.5mA  
2.0mA  
25˚C  
–25˚C  
1.5mA  
6
TC=100˚C  
1.0mA  
0.5mA  
4
(2)  
2
(3)  
(4)  
0
0
20 40 60 80 100 120 140 160  
0
2
4
6
8
10  
0
0.8  
1.6  
2.4  
3.2  
(
)
(
V
)
( )  
Base to emitter voltage VBE V  
Ambient temperature Ta ˚C  
Collector to emitter voltage VCE  
VCE(sat) — IC  
hFE — IC  
Cob — VCB  
100  
105  
10000  
IC/IB=250  
VCE=3V  
IE=0  
f=1MHz  
TC=25˚C  
30  
10  
3000  
1000  
TC=100˚C  
25˚C  
104  
103  
102  
10  
–25˚C  
25˚C  
3
1
300  
100  
TC=100˚C  
–25˚C  
0.3  
0.1  
30  
10  
0.03  
0.01  
3
1
0.01 0.03  
0.1  
0.3  
1
3
10  
0.01 0.03  
0.1  
0.3  
1
3
10  
0.1  
0.3  
1
3
10  
30  
100  
(
A
)
(
A
)
( )  
Collector to base voltage VCB V  
Collector current IC  
Collector current IC  
Area of safe operation (ASO)  
Rth(t) — t  
100  
103  
102  
10  
(1) Without heat sink  
(2) With a 100 × 100 × 2mm Al heat sink  
Non repetitive pulse  
TC=25˚C  
30  
10  
(1)  
ICP  
t=1ms  
(2)  
3
1
IC  
10ms  
DC  
1
0.3  
0.1  
10–1  
10–2  
0.03  
0.01  
1
3
10  
30  
100 300 1000  
10–4  
10–3  
10–2  
10–1  
1
10  
102  
103  
104  
(
V
)
( )  
t s  
Collector to emitter voltage VCE  
Time  
2

2SD1276 相关器件

型号 制造商 描述 价格 文档
2SD1276/2SD1276A ETC 2SD1276. 2SD1276A - NPN Transistor Darlington 获取价格
2SD1276A PANASONIC Silicon PNP epitaxial planar type Darlington(For power amplification and switching) 获取价格
2SD1276A SAVANTIC Silicon NPN Power Transistors 获取价格
2SD1276A ISC Silicon NPN Power Transistors 获取价格
2SD1276A JMNIC Silicon NPN Power Transistors 获取价格
2SD1276AP ETC TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SOT-186 获取价格
2SD1276AQ ETC TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SOT-186 获取价格
2SD1276AR ETC TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SOT-186 获取价格
2SD1276P ETC TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SOT-186 获取价格
2SD1276Q ETC TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SOT-186 获取价格

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