2SD1280A [PANASONIC]
Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, MINI PACKAGE-3;
| 型号： | 2SD1280A |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, MINI PACKAGE-3 |
| 文件： | 总4页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1280
Silicon NPN epitaxial planar type
For low-voltage type medium output power amplification
Unit: mm
4.5 0.1
1.6 0.2
1.5 0.1
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory operation performances at high efficiency with the low-
voltage power supply.
• Mini power type package, allowing downsizing of the equpment
and automatic insertion through the tape packing anthe magazine
packing.
3
2
0.4 0.0
1.5 0
5 0.08
0.4 0.04
3˚
■ Absolute Maximum Ratings Ta = 25°C
45˚
3.0 0.15
Parameter
Symbo
CBO
VCEO
EBO
IC
ing
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base
Emitter-base voltage (Coltor on)
Collector current
20
1 : Base
2 : Collector
3 : Emitter
20
V
V
MiniP3-F1 Package
1
A
Peak collecor current
ICP
2
A
Marking Symbol: R
Collector powedissiation *
Junction emeratue
1
W
°C
°C
150
torage tempre
−55 to +150
Noe) : Prinrcuit board: Coper foil aea of 1 cm2 or more, and the
*
bard thickness o1.7 mm for the collector portion
■ Electriaracteristics Ta = 25°C 3°C
er
Symbol
VCEO
Conditions
IC = 1 mA, IB = 0
Min
20
5
Typ
Max
Unit
V
Collector-ege (Base open)
Emitter-base voe (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
VEBO
IE = 10 µA, IC = 0
V
ICBO
VCB = 10 V, IE = 0
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1.5 A
1
µA
*
hFE1
90
50
280
hFE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC = 1 A, IB = 50 mA
0.5
1.2
V
V
VBE(sat) IC = 500 mA, IB = 50 mA
fT
VCB = 6 V, IE = −50 mA, f = 200 MHz
VCB = 6 V, IE = 0, f = 1 MHz
150
18
MHz
pF
Collector output capacitance
Cob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
S
hFE1
90 to 155
130 to 210
180 to 280
Publication date: December 2002
SJC00214CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1280
PC Ta
IC VCE
IC VCE(sat)
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
1.0
0.8
0.6
0.4
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness
Ta = 25°C
Ta = 25°C
IC / IB = 10
20
IB = 5.0 mA
4.5 mA
4.0 mA
3.5 mA
3.0 m
mA
1.5 mA
A
0.5 mA
0
4
0.8
1.2
1.6
2
0
20 40 60 80 100 120 140 160
0.1
0.2
03
0.4
0.5
(
ollecto-emitter voltage VCE
(
)
( )
Collector-emitter saturation voltage VCE(sat) V
Ambient temperature Ta °C
IC IB
VCE(sat) IC
VBE(sat) IC
1.2
1.0
0.8
0.6
0.4
0.2
0
100
10
100
IC / IB = 20
IC / IB = 10
VCE =
Ta =
10
25°C
Ta = −25°C
1
1
Ta = 75°
25°C
75°C
−25°C
0.1
0.01
0.1
0.01
0.01
2
4
8
10
12
0.01
0.1
1
10
0.1
1
10
(
ent ImA
(
A
)
( )
Collector current IC A
Collector current IC
IC
f IE
Cob VCB
50
200
600
500
400
300
200
100
0
VCB = 6 V
Ta = 25°C
VCE = 2 V
IE = 0
f = 1 MHz
Ta = 25°C
175
150
125
100
75
40
30
20
10
0
Ta = 75°C
25°C
−25°C
50
25
0
−1
1
10
100
−10
−100
0.01
0.1
1
10
(
V
)
Collector-base voltage VCB
(
)
(
A
)
Emitter current IE mA
Collector current IC
SJC00214CED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1280
ICBO Ta
ICEO Ta
Safe operation area
104
103
102
10
1
105
104
103
102
10
10
1
Single pulse
Ta = 25°C
VCB = 10 V
VCE = 18 V
ICP
IC
t = 10 ms
t = 1 s
DC
0.1
0.01
1
0
20 40 60 80 100 120 140 160
0
20 40 60 100 120 140 1
1
10
100
(
)
(
)
Ambient temperature Ta °C
Ambit temperature Ta °C
(
)
V
Collector-emitter voltage VCE
SJC00214CED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
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