2SD1445Q [PANASONIC]
Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, 3 PIN;
| 型号： | 2SD1445Q |
| 厂家： | 
PANASONIC |
| 描述： | Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, 3 PIN |
| 文件： | 总4页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1445, 2SD1445A
Silicon NPN epitaxial planar type
For power amplification, power switching and low-voltage switching
Unit: mm
Complementary to 2SB0948 and 2SB0948A
10.0 0.2
5.5 0.2
4.2 0.2
2.7 0.2
I Features
•
•
•
•
•
Low collector to emitter saturation voltage VCE(sat)
High-speed switching
Satisfactory linearity of forward current transfer ratio hFE
Large collector current IC
Full-pack package which can be installed to the heat sink with one
screw
φ 3.1 0.1
1.3 0.2
1.4 0.1
+0.2
0.5
–0.1
0.8 0.1
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
Ratin
Unit
2.54 0.3
5.08 0.5
2SD1445
2SD1445A
2SD1445
2SD1445A
VCBO
V
Collector to base
1: Base
2: Collector
3: Emitter
voltage
50
1
2 3
VEO
20
V
Collector to
EIAJ: SC-67
emitter voltage
4
TO-220F-A1 Package
Emitter to base voltage
Peak collector curren
Collector current
VEBO
ICP
IC
5
V
A
20
10
A
TC = 25°C
= 25°C
PC
4
W
Collector power
dissipatin
2
ction tee
Storagtemture
Tj
150
°C
°C
Tstg
−55 to +150
I Elctrical CharacteristicTC = 25°C
ter
Symbol
Conditions
Min
Typ
Max
50
Unit
2SD1445
ICBO
VCB = 40 V, IE = 0
VCB = 50 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
µA
Collecto
current
2SD1445A
50
Emitter cutoff cnt
IEBO
50
µA
2SD1445
VCEO
20
40
45
90
V
Collector to emitter
voltage
2SD1445A
Forward current transfer ratio
hFE1
VCE = 2 V, IC = 0.1 A
*
hFE2
VCE = 2 V, IC = 3 A
260
0.6
1.5
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
VCE(sat)
VBE(sat)
fT
IC = 10 A, IB = 0.33 A
V
V
IC = 10 A, IB = 0.33 A
VCE = 10 V, IC = 0.5 A, f = 10 MHz
VCB = 10 V, IE = 0, f = 1 MHz
IC = 3 A, IB1 = 0.1 A, IB2 = − 0.1 A,
VCC = 20 V
120
200
0.3
0.4
0.1
MHz
pF
Cob
ton
µs
Storage time
tstg
µs
Fall time
tf
µs
Note) : Rank classification
*
Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the
rank classification. (2SD1445A only)
Rank
Q
P
hFE2
90 to 180
130 to 260
305
2SD1445, 2SD1445A
Power Transistors
PC Ta
IC VCE
VCE(sat) IC
80
10
8
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(PC=2.0W)
IC/IB=20
TC=25˚C
10
IB=100mA
90mA
80mA
70mA
60mA
70
60
50
40
30
20
10
0
3
1
TC=100˚C
25˚C
6
50mA
(1)
40mA
0.3
0.1
4
–25˚C
A
20mA
10mA
2
(2)
(3)
0
0
20 40 60 80 100 120 140 160
0
2
4
5
6
0.3
1
10
30
(
)
( )
A
Ambient temperature Ta ˚C
Collector temitter voltage VCE
Collector current IC
VBE(sat) IC
hFE IC
fT IC
1000
VCE=10V
f=10MHz
TC=25˚C
IC/IB=20
VC
10
1000
00
100
3
1
300
10
TC100˚C
C
25˚C
30
10
–5˚C
5˚C
TC=0˚C
0.3
0.1
30
3
1
0.0
0.
3
1
0.3
0.1
.1
0.3
1
10
30
0.1
0.3
1
3
10
30
0.01 0.03
0.1 0.3
1
3
10
(
A
)
( )
A
( )
Collector current IC A
Cotor curent IC
Collector current IC
f IC
Area of safe operation (ASO)
100
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=30(IB1=–IB2
VCC=30V
Non repetitive pulse
TC=25˚C
)
30
10
30
10
ICP
t=10ms
TC=25˚C
IC
t=1ms
DC
3
1
3
1
ton
0.3
0.1
0.3
0.1
tstg
tf
0.03
0.01
0.03
0.01
0
1
2
3
4
5
1
3
10
30
100 300 1000
(
A
)
( )
Collector to emitter voltage VCE V
Collector current IC
306
Power Transistors
2SD1445, 2SD1445A
Rth(t) t
103
102
10
(1)Without heat sink
(2)With a 100×100×2mm Al heat sink
(1)
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
03
104
( )
s
Time
t
307
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
相关型号：
2SD1447-11-C
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN
MITSUBISHI
2SD1447-11-D
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN
MITSUBISHI
2SD1447-11-E
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN
MITSUBISHI
2SD1447-T11-C
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN
MITSUBISHI
2SD1447-T11-D
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN
MITSUBISHI
2SD1447-T11-E
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN
MITSUBISHI
©2020 ICPDF网 联系我们和版权申明