2SD1773 [PANASONIC]
Silicon NPN triple diffusion planar type Darlington(For midium speed switching); 硅NPN三重扩散平面型达林顿（对煤层炮高速开关）
| 型号： | 2SD1773 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type Darlington(For midium speed switching) |
| 文件： | 总2页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1773
Silicon NPN triple diffusion planar type Darlington
For midium speed switching
Complementary to 2SB1193
Unit: mm
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
Features
High foward current transfer ratio hFE
■
φ3.1±0.1
●
●
High-speed switching
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
1.4±0.1
Absolute Maximum Ratings (T =25˚C)
0.5 +–00..12
■
C
0.8±0.1
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
2.54±0.25
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
120
5.08±0.5
120
V
1
2
3
1:Base
2:Collector
3:Emitter
7
V
12
A
TO–220 Full Pack Package(a)
IC
8
A
Collector power TC=25°C
50
Internal Connection
PC
W
dissipation
Ta=25°C
2
C
E
Junction temperature
Storage temperature
Tj
150
˚C
˚C
B
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
10
Unit
µA
µA
V
VCB = 120V, IE = 0
Collector cutoff current
ICEO
VCE = 100V, IB = 0
IC = 2A, L = 10mH
IE = 50mA, IC = 0
Collector to base voltage
Emitter to base voltage
VCEO(sus)
VEBO
hFE
120
7
V
Forward current transfer ratio
VCE = 3V, IC = 4A
1000
20000
1.5
3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
IC = 4A, IB = 8mA
V
V
Collector to emitter saturation voltage
Base to emitter saturation voltage
IC = 8A, IB = 80mA
IC = 4A, IB = 8mA
2
V
IC = 8A, IB = 80mA
VCE = 10V, IC = 0.5A, f = 1MHz
3.5
V
Transition frequency
Turn-on time
Storage time
Fall time
20
0.7
6
MHz
µs
ton
IC = 4A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
tstg
µs
tf
2
µs
1
Power Transistors
2SD1773
PC — Ta
IC — VCE
VCE(sat) — IC
80
10
8
(1) IC/IB=500
(2) IC/IB=250
(3) IC/IB=100
TC=25˚C
30
10
TC=25˚C
(1) TC=Ta
70
(2) With a 100 × 100 × 2mm
IB=5mA
Al heat sink
(3) Without heat sink
(PC=2W)
4mA
3mA
60
50
40
30
20
10
0
(1)
(1)
2mA
6
3
1
(2)
1mA
4
(3)
0.5mA
2
0.3
0.1
0.2mA
(2)
(3)
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.1
0.3
1
3
10
(
)
( )
V
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VBE(sat) — IC
hFE — IC
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=500 (IB1=–IB2
(1) IC/IB=500
(2) IC/IB=250
(3) IC/IB=100
TC=25˚C
30
10
30000
VCE=3V
30
10
)
V
CC=50V
tstg
TC=25˚C
10000
TC=100˚C
3
1
3
1
3000
1000
(2)
(1)
tf
–25˚C
ton
(3)
25˚C
0.3
0.1
0.3
0.1
300
100
0.03
0.01
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0
1
2
3
4
5
6
7
8
( )
A
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
100
102
10
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
Non repetitive pulse
TC=25˚C
(1)
(2)
30
10
ICP
IC
t=1ms
3
1
10ms
1
DC
0.3
0.1
10–1
0.03
0.01
10–2
10–3
1
3
10
30
100 300 1000
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
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