2SD1995 [PANASONIC]
Silicon NPN epitaxial planer type(For low-frequency amplification); NPN硅外延平面型（低频放大）
| 型号： | 2SD1995 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer type(For low-frequency amplification) |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD1995
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1
4.0
2.5±0.1
1.05
±0.05
(1.45)
0.8
0.7
Features
High foward current transfer ratio hFE
■
●
.
●
●
●
Low collector to emitter saturation voltage VCE(sat)
.
0.65 max.
High emitter to base voltage VEBO
.
Allowing supply with the radial taping.
0.45+–00..015
2.5±0.5 2.5±0.5
Absolute Maximum Ratings (Ta=25˚C)
■
1
2
3
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
50
40
V
Note: In addition to the
lead type shown in
1:Emitter
2:Collector
15
V
the upper figure, the 3:Base
100
mA
mA
mW
˚C
type as shown in
the lower figure is
also available.
MT1 Type Package
IC
50
Collector power dissipation
Junction temperature
Storage temperature
PC
400
Tj
150
Tstg
–55 ~ +150
˚C
1.2±0.1
0.65
max.
+
0.1
0.45–0.05
(HW type)
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
nA
µA
V
V
CB = 20V, IE = 0
100
1
Collector cutoff current
ICEO
VCE = 20V, IB = 0
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
IC = 10µA, IE = 0
50
40
IC = 1mA, IB = 0
V
IE = 10µA, IC = 0
15
V
*
Forward current transfer ratio
hFE
VCE = 10V, IC = 2mA
400
2000
0.2
Collector to emitter saturation voltage VCE(sat)
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
0.05
200
V
Transition frequency
fT
MHz
Noise voltage
NV
80
mV
*hFE Rank classification
Rank
hFE
R
S
T
400 ~ 800 600 ~ 1200 1000 ~ 2000
1
Transistor
2SD1995
PC — Ta
IC — VCE
IC — VBE
500
400
300
200
100
0
160
140
120
100
80
120
100
80
60
40
20
0
VCE=10V
Ta=25˚C
25˚C
Ta=75˚C
–25˚C
IB=100µA
90µA
80µA
70µA
60µA
50µA
40µA
30µA
60
40
20µA
10µA
20
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
100
1000
250
200
150
100
50
VCB=10V
Ta=25˚C
IC/IB=10
VCE=10V
Ta=75˚C
25˚C
30
10
800
600
400
200
0
3
1
–25˚C
0.3
0.1
Ta=75˚C
–25˚C
25˚C
0.03
0.01
0
1
3
10
30
100 300 1000
– 0.1 – 0.3
–1
–3
–10 –30 –100
– 0.1 – 0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Emitter current IE mA
Cob — VCB
NV — IC
NV — VCE
8
7
6
5
4
3
2
1
0
100
80
60
40
20
0
100
80
60
40
20
0
VCE=10V
GV=80dB
Function=FLAT
Ta=25˚C
IE=0
f=1MHz
Ta=25˚C
Rg=100kΩ
Rg=100kΩ
22kΩ
5kΩ
22kΩ
5kΩ
IC=1mA
GV=80dB
Function=FLAT
Ta=25˚C
1
3
10
30
100
1
3
10
30
100
1
3
10
30
100
( )
V
(
)
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Collector current IC mA
2
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