2SD2254 [PANASONIC]
Silicon NPN triple diffusion planar type Darlington(For power amplification); 硅NPN三重扩散平面型达林顿（对于功率放大）
| 型号： | 2SD2254 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 文件： | 总3页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2254
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
φ 3.3±0.2
5.0±0.3
Complementary to 2SB1492
20.0±0.5
3.0
Features
Optimum for 60W HiFi output
■
●
●
High foward current transfer ratio hFE: 5000 to 30000
●
Low collector to emitter saturation voltage VCE(sat): <2.5V
1.5
1.5
2.0±0.3
2.7±0.3
3.0±0.3
Absolute Maximum Ratings (T =25˚C)
■
C
1.0±0.2
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
0.6±0.2
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
130
5.45±0.3
10.9±0.5
110
V
1:Base
2:Collector
3:Emitter
5
V
10
A
1
2
3
TOP–3L Package
IC
6
70
A
Collector power TC=25°C
Internal Connection
PC
W
dissipation
Ta=25°C
3.5
C
Junction temperature
Storage temperature
Tj
150
˚C
˚C
B
Tstg
–55 to +150
E
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
100
100
Unit
µA
µA
µA
V
VCB = 130V, IE = 0
Collector cutoff current
ICEO
IEBO
VCEO
hFE1
VCE = 110V, IB = 0
VEB = 5V, IC = 0
Emitter cutoff current
Collector to emitter voltage
I
C = 30mA, IB = 0
110
2000
5000
VCE = 5V, IC = 1A
Forward current transfer ratio
*
hFE2
VCE = 5V, IC = 5A
30000
2.5
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 5A, IB = 5mA
V
V
IC = 5A, IB = 5mA
3.0
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 1MHz
20
MHz
µs
1.4
4.5
0.8
IC = 5A, IB1 = 5mA, IB2 = –5mA,
VCC = 50V
µs
µs
*hFE2 Rank classification
Rank
hFE2
Q
P
5000 to 15000 8000 to 30000
1
Power Transistors
2SD2254
PC — Ta
IC — VCE
VBE(sat) — IC
80
12
10
8
100
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.5W)
IC/IB=1000
TC=25˚C
(1)
70
60
50
40
30
20
10
0
IB=5mA
30
10
1mA
0.9mA
0.8mA
0.7mA
6
3
1
0.6mA
0.5mA
0.4mA
TC=–25˚C
4
25˚C
100˚C
0.3mA
0.2mA
0.1mA
(2)
(3)
2
0.3
0.1
0
0
20 40 60 80 100 12 140 160
0
2
4
6
8
10
12
0.1
0.3
1
3
10
30
100
(
)
( )
V
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
Cob — VCB
100
100000
1000
IC/IB=1000
VCE=5V
IE=0
f=1MHz
TC=25˚C
30000
30
10
300
100
10000
3000
1000
TC=100˚C
3
1
30
10
25˚C
300
100
–25˚C
–25˚C
TC=100˚C
25˚C
10
0.3
0.1
3
1
30
10
0.1
0.3
1
3
30
100
0.01 0.03
0.1
0.3
1
3
10
1
3
10
30
100
(
A
)
( )
A
( )
Collector to base voltage VCB V
Collector current IC
Collector current IC
ton, tstg, tf — IC
Area of safe operation (ASO)
100
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000 (IB1=–IB2
VCC=50V
TC=25˚C
Non repetitive pulse
TC=25˚C
30
10
)
30
10
ICP
t=1ms
10ms
DC
tstg
IC
3
1
3
1
ton
tf
0.3
0.1
0.3
0.1
0.03
0.01
0.03
0.01
0
4
8
12
16
1
3
10
30
100 300 1000
(
A
)
( )
Collector to emitter voltage VCE V
Collector current IC
2
Power Transistors
2SD2254
Rth(t) — t
1000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
10
1
(1)
(2)
0.1
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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