2SD2274P [PANASONIC]
Power Bipolar Transistor, 4A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP3L, 3 PIN;
| 型号： | 2SD2274P |
| 厂家： | 
PANASONIC |
| 描述： | Power Bipolar Transistor, 4A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP3L, 3 PIN 局域网 放大器 晶体管 |
| 文件： | 总4页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2274
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
φ 3.3±0.2
5.0±0.3
Complementary to 2SB1501
0.0±0.5
3.0
Features
Optimum for 45W HiFi output
■
●
●
High foward current transfer ratio hFE: 5000 to 30000
●
Low collector to emitter saturation voltage VCE(sat): <3.0V
1.5
1.5
2.7±0.3
3.0±0.3
Absolute Maximum Ratings (T =25˚C)
■
C
.0±0.2
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Uni
0.6±0.2
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
110
5.45±0.3
10.9±0.5
90
V
1:Base
2:Collector
3:Emitter
5
V
A
1
2
3
TOP–3L Package
IC
4
50
A
Collector power TC=25°C
Internal Connection
P
W
dissipation
Ta=25°C
3.5
C
Junction temperature
Storage temperature
Tj
150
˚C
˚C
B
Ts
–55 to
E
Elecricl Chcteristics (T =5˚C)
■
C
Parameter
ymol
ICBO
Conditions
min
typ
max
100
100
100
Unit
µA
µA
µA
V
VCB = 110V, IE = 0
Colltor cutoff c
ICEO
IEBO
VCEO
hFE1
VCE = 90V, IB = 0
VEB = 5V, IC = 0
Emitter cutoff c
Collector to emitter
I
C = 30mA, IB = 0
90
VCE = 5V, IC = 1A
2000
5000
Forward current transfer ratio
*
hFE2
VCE = 5V, IC = 3A
30000
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 3A, IB = 3mA
3
3
V
V
IC = 3A, IB = 3mA
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 1MHz
20
MHz
µs
2.5
3.0
0.7
IC = 3A, IB1 = 3mA, IB2 = –3mA,
VCC = 50V
µs
µs
*hFE2 Rank classification
Rank
hFE2
Q
S
P
5000 to 15000 7000 to 21000 8000 to 30000
1
Power Transistors
2SD2274
PC — Ta
IC — VCE
VBE(sat) — IC
80
6
5
4
3
2
1
0
100
IC/IB=1000
TC=25˚C
(1) TC=Ta
70
(2) With a 100 × 100 × 2mm
30
10
Al heat sink
(3) Without heat sink
(PC=3.5W)
IB=3mA
60
50
40
30
20
10
0
(1)
0.5mA
0.4mA
0.3mA
3
=–25˚C
0.2mA
10˚C
25˚C
0.1mA
(2)
(3)
0.3
0.1
0
20 40 60 80 100 120 140 160
0
2
4
6
8
0
0.1
0.3
0
30
100
(
)
(
V
)
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltge VC
CollectIC
VCE(sat) — IC
FE —
Cob — VCB
100
100000
1000
IC/IB=1000
VCE=5V
IE=0
f=1MHz
TC=25˚C
30000
30
10
300
100
00
T100˚C
TC=100˚C
25˚C
3
1
30
10
25˚C
300
100
25˚C
–25˚C
0.3
0.1
3
1
30
10
0.1
3
1
0
30
100
0.00.03
0.1
0.3
1
3
0
1
3
10
30
100
( )
A
(
)
( )
Collector to base voltage VCB V
Colctor cIC
Collector current IC
n, tstg, tf — IC
Area of safe operation (ASO)
100
100
s
–IB2
Non repetitive pulse
TC=25˚C
30
10
)
30
10 ICP
t=1ms
C
10ms
DC
tstg
3
1
3
ton
tf
1
0.3
0.1
0.3
0.1
0.03
0.01
0.03
0.01
0
2
4
6
8
1
3
10
30
100 300 1000
( )
A
( )
V
Collector current IC
Collector to emitter voltage VCE
2
Power Transistors
2SD2274
Rth(t) — t
1000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
10
1
(1)
(2)
0.1
10–3
10–2
10–1
1
10
102
103
4
( )
s
Time
t
3
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
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mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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Electric Industrial Co., Ltd.
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