2SD2465P [PANASONIC]

Power Bipolar Transistor, 4A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220E, FULL PACK-3;


型号：	2SD2465P
厂家：	PANASONIC
描述：	Power Bipolar Transistor, 4A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220E, FULL PACK-3 局域网开关晶体管
文件：	总4页 (文件大小：171K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Power Transistors

2SD2465, 2SD2465A

Silicon NPN epitaxial planar type

For low-voltage switching

Complementary to 2SB1603

Unit: mm

Features

■

4.6±0.2

●

Low collector to emitter saturation voltage V_CE(sat)

High-speed switching

9.9±0.3

2.9±0.2

φ3.2±0.1

●

Full-pack package superior in insulation, which can be installed

to the heat sink with one screw

Absolute Maximum Ratings (T =25˚C)

■

2.6±0.1

0.7±0.1

1.2±0.15

Parameter

Symbol

Ratings

Unit

1.45±0.15

Collector to

2SD2465

2SD2465A

2SD2465

V_CBO

0.75±0.1

base voltage

Collector to

2.54±0.2

5.08±0.4

V_CEO

emitter voltage 2SD2465A

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

2 3

7°

1:Base

2:Collector

3:Emitter

TO–220E Full Pack Package

I_C

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

2SD2465

V_CB= 40V, I_E= 0

current

2SD2465A

V_CB= 50V, I_E= 0

V_EB= 5V, I_C= 0

Emitter cutoff current

I_EBO

V_CEO

h_FE1

Collector to emitter 2SD2465

voltage 2SD2465A

I_C= 10mA, I_B= 0

V_CE= 2V, I_C= 0.1A

V_CE= 2V, I_C= 1A

I_C= 2A, I_B= 0.1A

Forward current transfer ratio

h_FE2

260

0.5

1.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

_C= 2A, I_B= 0.1A

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 5V, I_C= 0.5A, f = 10MHz

120

0.2

0.5

0.1

MHz

µs

I_C= 2A, I_B1= 0.2A, I_B2= – 0.2A,

V_CC= 20V

µs

^*h_FE2Rank classification

Rank

h_FE2

90 to 180

130 to 260

Power Transistors

2SD2465, 2SD2465A

P_C— Ta

I_C— V_CE

V_CE(sat)— I_C

100

I_C/I_B=10

(1) T_C=Ta

(2) With a 100 × 100 × 2mm

T_C=25˚C

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P_C=2.0W)

I_B=60mA

50mA

40mA

30mA

(1)

(2)

T_C=100˚C

25˚C

20mA

0.3

0.1

10mA

5mA

–25˚C

(3)

(4)

0.03

0.01

100 125 150

0.01 0.03

0.1

0.3

(

)

( )

Collector current I_CA

Ambient temperature Ta ˚C

Collector to emitter voltage V_CE

V_BE(sat)— I_C

h_FE— I_C

f_T— I_C

100

10000

I_C/I_B=10

V_CE=2V

V_CE=5V

f=10MHz

T_C=25˚C

3000

1000

T_C=100˚C

25˚C

300

100

300

100

25˚C

T_C=–25˚C

100˚C

–25˚C

0.3

0.1

0.03

0.01

0.01 0.03

0.1

0.3

0.1

0.3

100

0.01 0.03

0.1

0.3

( )

Collector current I_CA

Collector current I_C

t_on, t_stg, t_f— I_C

Area of safe operation (ASO)

100

Non repetitive pulse

T_C=25˚C

Pulsed t_w=1ms

Duty cycle=1%

I_C/I_B=10 (I_B1=–I_B2

)

_CC=20V

I_CP

I_C

T_C=25˚C

t=1ms

t_stg

10ms

t_on

t_f

0.3

0.1

0.3

0.1

0.03

0.01

0.03

0.01

100 300 1000

( )

Collector current I_C

Collector to emitter voltage V_CE

Power Transistors

2SD2465, 2SD2465A

R_th(t)— t

10²

(1) Without heat sink

(2) With a 100 × 100 × 2mm Al heat sink

(1)

(2)

10^–1

10^–2

10^–4

10^–3

10^–2

10^–1

10²

10³

10⁴

( )

Time

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

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– Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

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