2SD638S [PANASONIC]
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| 型号： | 2SD638S |
| 厂家： | 
PANASONIC |
| 描述： | 暂无描述 |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD638, 2SD639
Silicon NPN epitaxial planer type
For medium-power general amplification
Complementary to 2SB643 and 2SB644
Unit: mm
6.9±0.1
2.5±0.1
1.5
1.5 R0.9
1.0
Features
■
R0.9
●
Low collector to emitter saturation voltage VCE(sat)
.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R0.7
0.85
Absolute Maximum Ratings (Ta=25˚C)
■
0.55±0.1
0.45±0.05
Parameter
Symbol
Ratings
Unit
Collector to
2SD638
2SD639
2SD638
30
VCBO
V
3
2
1
base voltage
Collector to
60
25
VCEO
V
emitter voltage 2SD639
Emitter to base voltage
Peak collector current
Collector current
50
2.5
2.5
VEBO
ICP
IC
7
V
A
1:Base
1
0.5
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
A
Collector power dissipation
Junction temperature
Storage temperature
PC
600
mW
˚C
˚C
Tj
150
Tstg
–55 ~ +150
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
0.1
1
Unit
µA
VCB = 20V, IE = 0
Collector cutoff current
ICEO
VCE = 20V, IB = 0
µA
Collector to base
voltage
2SD638
2SD639
30
60
25
50
7
VCBO
IC = 10µA, IE = 0
V
Collector to emitter 2SD638
VCEO
VEBO
IC = 2mA, IB = 0
V
V
voltage
2SD639
Emitter to base voltage
IE = 10µA, IC = 0
*1
hFE1
hFE2
VCE = 10V, IC = 10mA
VCE = 10V, IC = 500mA*2
IC = 300mA, IB = 30mA
85
40
160
90
340
0.6
15
Forward current transfer ratio
Collector to emitter saturation voltage VCE(sat)
0.35
200
6
V
MHz
pF
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
Collector output capacitance
Cob
*2 Pulse measurement
*1
h
Rank classification
FE1
Rank
hFE1
Q
R
S
85 ~ 170
120 ~ 240
170 ~ 340
1
Transistor
2SD638, 2SD639
PC — Ta
IC — VCE
IC — IB
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
Ta=25˚C
VCE=10V
Ta=25˚C
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0
40
80
120
160
200
)
0
4
8
12
16
20
0
2
4
6
8
10
(
(
V
)
(
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Base current IB mA
VCE(sat) — IC
VBE(sat) — IC
hFE — IC
100
100
300
250
200
150
100
50
IC/IB=10
IC/IB=10
VCE=10V
30
10
30
10
Ta=75˚C
25˚C
3
1
3
1
25˚C
75˚C
–25˚C
Ta=–25˚C
Ta=75˚C
25˚C
0.3
0.1
0.3
0.1
–25˚C
0.03
0.01
0.03
0.01
0
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
( )
A
(
A
)
( )
A
Collector current IC
Collector current IC
Collector current IC
fT — IE
Cob — VCB
ICEO — Ta
240
200
160
120
80
12
10
8
104
103
102
10
VCE=10V
IE=0
f=1MHz
Ta=25˚C
VCB=10V
Ta=25˚C
6
4
40
2
0
–1
0
1
–3
–10
–30
–100
1
3
10
30
100
0
40
80
120
160
200
)
(
)
(
V
)
(
Ambient temperature Ta ˚C
Emitter current IE mA
Collector to base voltage VCB
2
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