2SD662 [PANASONIC]

Silicon NPN epitaxial planer type(For high breakdown voltage general amplification); NPN硅外延平面型(对于高击穿电压一般放大)
2SD662
元器件型号: 2SD662
生产厂家: PANASONIC SEMICONDUCTOR    PANASONIC SEMICONDUCTOR
描述和应用:

Silicon NPN epitaxial planer type(For high breakdown voltage general amplification)
NPN硅外延平面型(对于高击穿电压一般放大)

PDF文件: 总2页 (文件大小:42K)
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型号参数:2SD662参数

2SD662B

Silicon NPN epitaxial planer type(For high breakdown voltage general amplification)

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11 PANASONIC

2SD662B

For High Breakdown Voltage General Amplification

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17 PANASONIC

2SD662BP

Small Signal Bipolar Transistor, 0.07A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN

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0 PANASONIC

2SD662BP

Small Signal Bipolar Transistor, 0.07A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN

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0 PANASONIC

2SD662BQ

暂无描述

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0 PANASONIC

2SD662BR

Small Signal Bipolar Transistor, 0.07A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN

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0 PANASONIC

2SD662P

Small Signal Bipolar Transistor, 0.07A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN

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0 PANASONIC

2SD662P

Small Signal Bipolar Transistor, 0.07A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN

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0 PANASONIC

2SD662Q

Small Signal Bipolar Transistor, 0.07A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN

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0 PANASONIC

2SD662R

Small Signal Bipolar Transistor, 0.07A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN

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0 PANASONIC

2SD664

TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 7A I(C) | TO-66

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24 ETC

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27 ETC

2SD665

Silicon NPN Power Transistors

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13 SAVANTIC

2SD665

Silicon NPN Power Transistors

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19 ISC

2SD666

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A

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44 HITACHI