2SK0663P [PANASONIC]
Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN;
| 型号： | 2SK0663P |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Field-Effect Transistor, 0.03A I(D), 55V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN 晶体 小信号场效应晶体管 开关 光电二极管 |
| 文件： | 总3页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Junction FETs (Small Signal)
2SK0663 (2SK663)
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
unit: mm
+0.10
–0.05
+0.1
–0.0
0.15
0.3
3
I Features
G Low noise-figure (NF)
G High gate to drain voltage VGDO
G S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Symbol
VDSX
VGDO
VGSO
ID
Ratings
Unit
V
55
−55
V
1: Source
2: Drain
3: Gate
−55
V
EIAJ: SC-70
SMini3-G1 Package
30
mA
mA
mW
°C
Gate current
IG
10
Marking Symbol (Example): 2B
Allowable power dissipation
Junction temperature
Storage temperature
PD
150
Tj
125
Tstg
−55 to +125
°C
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
12
Unit
mA
nA
V
*
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
IDSS
VDS = 10V, VGS = 0
VGS = −30V, VDS = 0
G = 100µA, VDS = 0
1
IGSS
VGDS
VGSC
gm
−10
I
55
80
Gate to Source cut-off voltage
Mutual conductance
VDS = 10V, ID = 10µA
−5
V
VDS = 10V, ID = 5mA, f = 1kHz
2.5
7.5
6.5
1.9
mS
pF
Input capacitance (Common Source) Ciss
VDS = 10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
pF
VDS = 10V, VGS = 0, Rg = 100kΩ
Noise figure
NF
2.5
dB
f = 100Hz
* IDSS rank classification
Runk
P
Q
R
IDSS (mA)
1 to 3
2BP
2 to 6.5
2BQ
5 to 12
2BR
Marking Symbol
Note) The part number in the parenthesis shows conventional part number.
253
Silicon Junction FETs (Small Signal)
2SK0663
PD Ta
ID VDS
ID VDS
240
200
160
120
80
5
4
3
2
1
0
10
8
Ta=25˚C
Ta=25˚C
VGS=0V
– 0.2V
6
V
GS=0
– 0.2V
– 0.4V
– 0.4V
– 0.6V
– 0.8V
4
– 0.6V
– 0.8V
2
40
–1.0V
–1.2V
10
–1.0V
0
0
0
20 40 60 80 100 120 140 160
0
0.1
0.2
0.3
0.4
0.5
0.6
0
2
4
6
8
12
(
)
(
V
)
(
V
)
Ambient temperature Ta ˚C
Drain to source voltage VDS
Drain to source voltage VDS
ID VGS
gm VGS
gm ID
16
14
12
10
8
12
10
8
12
10
8
VDS=10V
VDS=10V
Ta=25˚C
VDS=10V
Ta=25˚C
IDSS=7.5mA
6
6
Ta=–25˚C
25˚C
6
4
4
4
75˚C
2
2
2
0
0
0
0
– 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2
–2.0
–1.6
–1.2
– 0.8 – 0.4
0
)
0
2
4
6
8
10
(
V
)
(
V
(
)
Gate to source voltage VGS
Gate to source voltage VGS
Drain current ID mA
Ciss VDS
Coss VDS
16
14
12
10
8
8
7
6
5
4
3
2
1
0
VGS=0
Ta=25˚C
VGS=0
Ta=25˚C
6
4
2
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
(
V
)
( )
Drain to source voltage VDS V
Drain to source voltage VDS
254
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2001 MAR
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