2SK4206G-T [PANASONIC]

0.325mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, JFET, ROHS COMPLIANT, TSSSMINI3-F2, 3 PIN;
2SK4206G-T
型号: 2SK4206G-T
厂家: PANASONIC    PANASONIC
描述:

0.325mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, JFET, ROHS COMPLIANT, TSSSMINI3-F2, 3 PIN

文件: 总4页 (文件大小:377K)
中文:  中文翻译
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This product complies with the RoHS Directive (EU 2002/95/EC).  
Silicon Junction FETs (Small Signal)  
2SK4206G  
Silicon N-channel junction FET  
For impedance conversion in low frequency  
For electret capacitor microphone  
Package  
Features  
Code  
Low noise voltage NV  
High voltage gain GV  
Thin package: TSSSMini3-F2 (1.2 mm × 1.2 mm × 0.33 mm)  
TSSSMini3-F2  
Pin Name  
1: Drain  
Absolute Maximum Ratings Ta = 25°C  
2: Source  
3: Gate  
Parameter  
Drain-source voltage (Gate open)  
Drain-gate voltage (Souece open)  
Drain-source current (Gate open)  
Drain-gate current (Souece open)  
Power dissipation  
Symbol  
VDSO  
VDGO  
IDSO  
Rating  
Unit  
V
20  
Marking Symbol: 9H  
20  
V
2
2
mA  
mA  
mW  
°C  
IDGO  
PD  
100  
Operating ambient temperature  
Storage temperature  
Topr  
–20 to +80  
–55 to +125  
T
stg  
°C  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
ID  
Conditions  
Min  
170  
180  
660  
Typ  
Max  
470  
450  
Unit  
mA  
mA  
mS  
1
Drain current *  
VDS = 2.0 V, Rd = 2.2 kW ± 1%  
VDS = 2.0 V, Rd = 2.2 kW ± 1%, VGS = 0  
VD = 2.0 V, VGS = 0, f = 1 kHz  
2
Drain-source current *  
IDSS  
Forward transfer conductance  
1500  
Yfs  
VD = 2.0 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, A-curve  
3
Noise voltage *  
NV  
GV1  
GV2  
GV3  
10  
mV  
VD = 2.0 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
–5.0  
–3.0  
–7.0  
–1.0  
3.0  
VD = 12 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
Voltage gain  
dB  
dB  
VD = 1.5 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
–1.5  
VD = 2.0 V, Rd = 2.2 kW ± 1%  
CO = 5 pF, eG = 10 mV  
f = 1 kHz to 70 Hz  
4
DGV . f*  
0
1.7  
2.0  
Voltage gain difference  
0.5  
GV1 – GV3  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. A protection diode is built-in between gate and source of transistor. However if forward current ows between gate and source transistor  
might be damaged. So please be careful not insert reverse.  
3. *1: ID is assured for IDSS  
.
2: Rank classication  
*
Rank  
T
U
ID (mA)  
170 to 325  
180 to 305  
265 to 470  
275 to 450  
IDSS (mA)  
3: NV is assured for design.  
*
*
4: D|GV . f | is assured for AQL 0.065. (The measurement method is used by source-grounded circuit.)  
Publication date: August 2008  
SJF00102BED  
1
This product complies with the RoHS Directive (EU 2002/95/EC).  
2SK4206G  
PD T  
ID VDS  
ID VGS  
a
3
120  
VDS = 2 V  
VGS = 0.6 V  
Ta = 25°C  
80  
60  
Ta = 85°C  
25°C  
0.5 V  
0.4 V  
80  
40  
2
1
0
40  
20  
0.3 V  
0.2 V  
0.1 V  
25°C  
0
0
0
0
0.8  
0.4  
1.2  
80  
40  
120  
0
8
4
12  
( )  
V
Gate-source voltage VGS  
(
)
Ambient temperature Ta °C  
( )  
V
Drain-source voltage VDS  
Yfs  VGS  
0.4  
0.3  
0.2  
VDS = 2 V  
Ta = 25°C  
0.1  
0
0.4  
0.8  
1.2  
(
)
V
Gate-source voltage VGS  
2
SJF00102BED  
This product complies with the RoHS Directive (EU 2002/95/EC).  
2SK4206G  
TSSSMini3-F2  
Unit: mm  
0.33 +00..0025  
0.08+00..0025  
3
2
1
+0.05  
0.02  
0.23  
(0.40)  
(0.40)  
0.80 ±0.05  
1.20 ±0.05  
5°  
SJF00102BED  
3
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita  
Electric Industrial Co., Ltd.  

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