2SK690P [PANASONIC]
Transistor;
| 型号： | 2SK690P |
| 厂家： | 
PANASONIC |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Frequency FETs
2SK690
GaAs N-Channel MES FET
For UHF medium output power amplification
unit: mm
1.5±0.1
4.5±0.1
1.6±0.2
■ Features
● Large collector dissipation PC
● Mini-power type package, allowing downsizing of the setand
automatic insertion through the tape/magazine packing.
45
08
0.4±0.04
5±0.08
1.1
■ Absolute Maximum Ratings (Ta = 25°C
3.0±0.15
2
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Symbl
VDS
D
Rat
Unit
V
3
1
0
−6
V
1: Gate
2: Source
3: Drain
marking
0.6
A
Gate current
I
1
1
mA
W
EIAJ: SC-62
Mini-Power Type Package (3-pin)
*
Allowable power dsiation
Channel emperre
Storage temprature
PD
Tch
150
°C
°C
°C
Marking Symbl: M
Internal Connection
Tstg
55 t+150
5 to +85
Operang mbientemperature Topr
D
1kΩ
* PC oarder foil of the rain portion should have a area of 1cm2 or
re and the boarthickness should be 1.7mm.
G
Zener Di
12V
S
Zener
8.2V
■ Elharcteristics (Ta = 25°C)
er
Drain c
Symbol
Conditons
VDS = 5V, VGS 0
min
typ
max
600
2
Unit
mA
mA
µA
µA
V
1, 2
*
IDD
IDSX
IGSS
150
350
Drain cut-ofurrent
Gate to Source leakage current
Gate to Drain current
Gate to Source cut-off voltage
Forward transfer admittance
Output power
VDS = 10V, VGS = −6V
VDS = 0, VGS = −6V
VDS = 16V
50
IGDO
VGSC
| Yfs |
Pout
500
−6
VDS = 5V, IDS = 1mA
VDS = 5V, IDS = 50mA, f = 1kHz
90
20
10
150
25
ms
dBm
dB
VDS = V, IDS = 100mA
= 940MHz, Pin = 10dBm
Power gain
PG
15
Additional efficiency
ηadd
51
%
1 IDSS rank classification
*
Rank
P
Q
R
IDSS (mA)
150 to 280
220 to 380
320 to 600
2 Pulse measurement
*
1
High Frequency FETs
2SK690
PD
Ta
ID VDS
| Yfs |
VGS
1.2
1.0
0.8
0.6
0.4
0.2
0
180
150
120
90
300
250
200
150
100
50
VDS=5V
f=1kHz
Ta=25˚C
Ta=25˚C
Copper foil of the drain portion
should have a area of 1cm2
or more and the board
thickness should be 1.7mm.
VGS=– 0.8V
– 0.9V
– 1.0V
– 1.1V
– 1.2V
– 1.3V
60
30
0
0
0
40
80
120 160 200 240
0
1
2
3
4
5
6
–2.0 –1.5 –1.0 – 0.5
0
0.5
1.0
(
)
( )
V
( )
Gate to source voltage VGS V
Ambient temperature Ta ˚C
Drain to source voltage VDS
Ciss, Coss, Crss
VDS
Pout
Pin
ηadd
Pin
2.4
2.0
1.6
1.2
0.8
0.4
0
40
30
60
50
40
30
20
10
0
VGS=–5V
f=1MHz
Ta=25˚C
VDS=6V
DS=100mA
f=940MHz
Pin=10dBm
VDS=6V
IDS=100mA
f=940MHz
Pin=10dBm
I
20
Ciss
10
Coss
0
Crss
–10
–20
1
3
10
30
100
–30 –20 –10
0
10
20
30
–30 –20 –10
0
10
20
30
(
V
)
(
)
(
)
Drain to source voltage VDS
Input voltage Pin dBm
Input voltage Pin dBm
Pout
VGS
ηadd
VGS
30
20
60
50
40
30
20
10
0
VDS=6V
IDS=100mA
f=940MHz
VDS=6V
IDS=100mA
f=940MHz
P
in=10dBm
Pin=10dBm
10
0
–10
–20
–30
0
–1
–2
–3
–4
0
– 0.5 –1.0 –1.5 –2.0 –2.5 –3.0
( )
V
( )
V
Gate to source voltage VGS
Gate to source voltage VGS
2
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