DMA206E10R [PANASONIC]
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN FREE, MINI6-G4-B, 6 PIN;
| 型号： | DMA206E10R |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN FREE, MINI6-G4-B, 6 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：556K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMA206E1
Silicon PNP epitaxial planar type
For high-frequency amplification
Features
High transition frequency fT
ꢀPackage
ꢀCode
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Mini6-G4-B
ꢀPin Name
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
ꢀBasic Part Number
Dual DSA2G01 (Individual)
6: Collector (Tr1)
Packaging
ꢀMarking Symbol: C9
ꢀInternal Connection
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
ꢀAbsolute Maximum Ratings T = 25°C
a
(C1) (B1) (C2)
6
5
4
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
–30
Unit
V
Tr2
Tr1
–20
V
–5
V
1
2
3
(E1) (E2) (B2)
–30
mA
mW
°C
°C
Total power dissipation
PT
300
Junction temperature
Tj
150
Storage temperature
T
stg
–55 to +150
ꢀElectrical Characteristics T = 25°C±3°C
a
Parameter
Base-emitter voltage
Symbol
Conditions
Min
Typ
Max
Unit
V
VBE
ICBO
ICEO
IEBO
hFE
VCE = –10 V, IC = –1 mA
VCB = –10 V, IE = 0
– 0.7
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
– 0.1
–100
–10
µA
µA
µA
VCE = –20 V, IB = 0
VEB = –5 V, IC = 0
VCE = –10 V, IC = –1 mA
70
220
hFE
(Small/Large)
hFE ratio *
VCE = –10 V, IC = –1 mA
0.50
0.99
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = –10 mA, IB = –1 mA
– 0.1
300
V
fT
VCE = –10 V, IC = –1 mA
150
MHz
Reverse transfer capacitance
(Common emitter)
Cre
VCE = –10 V, IC = –1 mA, f = 10.7 MHz
1.0
pF
Noise figure
NF
Zrb
VCE = –10 V, IC = –1 mA, f = 5 MHz
VCE = –10 V, IC = –1 mA, f = 2 MHz
2.8
22
dB
Reverse transfer impedance
W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Ratio between 2 elements
*
Publication date: September 2010
Ver. AED
1
DMA206E1
PT T
IC VCE
hFE IC
a
400
300
200
100
−50
−40
−30
−20
250
200
150
100
50
Ta = 25°C
V
CE = −10 V
Ta = 85°C
IB = −500 µA
−400 µA
−450 µA
−350 µA
25°C
−300 µA
−250 µA
−200 µA
−150 µA
−100 µA
−30°C
−10
−50 µA
0
0
0
0
−102
40
80
120
160
200
0
−2
−4
−6
−8 −10 −12
−1
−10
(
)
Ambient temperature Ta °C
Collector-emitter voltage VCE (V)
Collector current IC (mA)
VCE(sat) IC
IC VBE
Cob VCB
−10
−1
−40
−30
−20
−10
0
IC / IB = 10
IE = 0
V
CE = 10 V
f =1 MHz
4.0
3.0
2.0
1.0
0
Ta = 25°C
25°C
Ta = 85°C
−30°C
Ta = 85°C
−10−1
−30°C
25°C
−10−2
−10−1
−1
−10
−102
−1
−10
−102
0
− 0.4
− 0.8
−1.2
Collector current IC (mA)
Collector-base voltage VCB (V)
Base-emitter voltage VBE (V)
fT IC
350
300
VCE = −10 V
T
a = 25°C
250
200
150
100
50
0
−10−1
−1
−10
−102
Collector current IC (mA)
Ver. AED
2
DMA206E1
Mini6-G4-B
Unit: mm
2.90 +−00..0250
0.50 +−00..0150
0.30 +−00..0150
0.13 +−00..0025
6
5
4
1
2
3
(0.95)
(0.95)
1.9 ±0.1
8°
Ver. AED
3
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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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20100202
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