DMG264020R [PANASONIC]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN;
DMG264020R
型号: DMG264020R
厂家: PANASONIC    PANASONIC
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN

开关 光电二极管 晶体管
文件: 总6页 (文件大小:916K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DMG26402  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
Unit: mm  
For digital circuits  
Features  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: F9  
Basic Part Number  
DRC2124E + DRA2124E (Individual)  
Packaging  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Collector (Tr2)  
Panasonic  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collector (Tr1)  
Mini6-G4-B  
SC-74  
DMG264020R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
JEITA  
Parameter  
Collector-base voltage (Emitter open)  
Tr1 Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
Code  
SOT-457  
(C1) (B2) (E2)  
50  
V
6
5
4
100  
mA  
V
R1  
R2  
Collector-base voltage (Emitter open)  
Tr2 Collector-emitter voltage (Base open)  
Collector current  
VCBO  
VCEO  
IC  
–50  
Tr1  
Tr2  
R1  
–50  
V
R2  
–100  
mA  
mW  
°C  
°C  
°C  
1
2
3
(E1) (B1) (C2)  
Total power dissipation  
PT  
300  
Junction temperature  
Overall  
Tj  
150  
R1  
Tr1  
22  
22  
22  
22  
kΩ  
kΩ  
kΩ  
kΩ  
R2  
Resistance  
value  
Operating ambient temperature  
Topr  
–40 to +85  
–55 to +150  
R1  
Tr2  
Storage temperature  
T
stg  
R2  
Publication date: November 2013  
Ver. DED  
1
DMG26402  
Electrical Characteristics Ta = 25°C±3°C  
Tr1  
Parameter  
Symbol  
VCBO IC = 10 µA, IE = 0  
VCEO IC = 2 mA, IB = 0  
Conditions  
Min  
50  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
50  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
0.2  
µA  
µA  
mA  
V
VCE = 10 V, IC = 5 mA  
60  
VCE(sat) IC = 10 mA, IB = 0.5 mA  
VI(on) VCE = 0.2 V, IC = 5 mA  
0.25  
2.6  
V
Input voltage (OFF)  
VI(off) VCE = 5 V, IC = 100 µA  
0.8  
+30%  
1.2  
V
Input resistance  
R1  
–30%  
0.8  
22  
kΩ  
Resistance ratio  
R1 / R2  
1.0  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Tr2  
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
– 0.2  
µA  
µA  
mA  
V
VCE = –10 V, IC = –5 mA  
60  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
–2.6  
V
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
– 0.8  
+30%  
1.2  
V
Input resistance  
R1  
–30%  
0.8  
22  
kΩ  
Resistance ratio  
R1 / R2  
1.0  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Ver. DED  
2
DMG26402  
Common characteristics chart  
PT T  
a
350  
300  
250  
200  
150  
100  
50  
0
0
40  
80  
120  
160  
200  
(
)
Ambient temperature Ta °C  
Characteristics charts of Tr1  
IC VCE  
hFE IC  
VCE(sat) IC  
10  
1
120  
400  
350  
300  
250  
I
C / IB = 20  
V
CE = 10 V  
Ta = 25°C  
100  
I
B = 350 µA  
Ta = 85°C  
300 µA  
250 µA  
200 µA  
80  
60  
40  
20  
0
25°C  
200  
150  
150 µA  
100 µA  
40°C  
0.1  
Ta = 85°C  
100  
40°C  
50 µA  
50  
0
25°C  
0.01  
0
2
4
6
8
10  
12  
0.1  
1
10  
100  
0.1  
1
10  
100  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Collector current IC (mA)  
IO VIN  
VIN IO  
100  
10  
10  
1
VO = 5 V  
V
O = 0.2 V  
Ta = 85°C  
25°C  
Ta = −40°C  
101  
102  
103  
25°C  
85°C  
1
40°C  
0.1  
0
0.5  
1.0  
1.5  
2.0  
0.1  
1
10  
100  
Output current IO (mA)  
(V)  
Input voltage VIN  
Ver. DED  
3
DMG26402  
Characteristics charts of Tr2  
IC VCE  
hFE IC  
VCE(sat) IC  
10  
1  
120  
300  
250  
200  
150  
100  
50  
IC / IB = 20  
V
CE = −10 V  
Ta = 25°C  
100  
I
B = −600 µA  
Ta = 85°C  
500 µA  
400 µA  
80  
60  
40  
20  
0
25°C  
300 µA  
200 µA  
Ta = 85°C  
25°C  
40°C  
0.1  
40°C  
100 µA  
0
0.01  
0
2  
4  
6  
8 10 12  
0.1  
1  
10  
−100  
0.1  
1  
10  
100  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Collector current IC (mA)  
IO VIN  
VIN IO  
100  
10  
10  
1  
VO = 5 V  
V
O = − 0.2 V  
Ta = 85°C  
25°C  
Ta = −40°C  
101  
102  
103  
25°C  
85°C  
1  
40°C  
0.1  
0.1  
1  
10  
100  
0
0.5  
1.0  
1.5  
2.0  
Output current IO (mA)  
(V)  
Input voltage VIN  
Ver. DED  
4
DMG26402  
Unit: mm  
Mini6-G4-B  
参考ランド寸(Unit: mm)  
Ver. DED  
5
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any  
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any  
other company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications  
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,  
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of  
the products may directly jeopardize life or harm the human body.  
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with  
your using the products described in this book for any special application, unless our company agrees to your using the products in  
this book for any special application.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.  
20100202  

相关型号:

DMG26405

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, MINI6-G4-B, 6 PIN
PANASONIC

DMG264050R

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN
PANASONIC

DMG26412

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, 6 PIN
PANASONIC

DMG264120R

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN
PANASONIC

DMG264H00R

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN
PANASONIC

DMG2N60-TR

600V N-Channel Power MOSFET
DYELEC

DMG2N60-TU

600V N-Channel Power MOSFET
DYELEC

DMG2N65-TR

650V N-Channel Power MOSFET
DYELEC

DMG2N65-TU

650V N-Channel Power MOSFET
DYELEC

DMG301NU

25V N-CHANNEL ENHANCEMENT MODE MOSFET
DIODES

DMG301NU-13

25V N-CHANNEL ENHANCEMENT MODE MOSFET
DIODES

DMG301NU-7

25V N-CHANNEL ENHANCEMENT MODE MOSFET
DIODES