DRA2115G0L [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN;型号: | DRA2115G0L |
厂家: | PANASONIC |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN 开关 光电二极管 晶体管 |
文件: | 总4页 (文件大小:448K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Doc No. TT4-EA-11719
Revision. 2
Transistors with Built-in Resistor
DRA2115G0L
DRA2115G0L
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
Complementary to DRC2115G
2.9
0.4
0.16
Features
3
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
2
Marking Symbol:
Packaging
LX
1.1
(0.95)(0.95)
1.9
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic
JEITA
Mini3-G3-B
SC-59A
TO-236AA/SOT-23
Absolute Maximum Ratings Ta = 25 C
Code
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Symbol
VCBO
VCEO
IC
Rating
-50
-50
-100
200
Unit
V
V
mA
mW
°C
Internal Connection
C
Total power dissipation
Junction temperature
PT
Tj
B
R2
150
E
Operating ambient temperature
Storage temperature
Topr
Tstg
-40 to +85
-55 to +150
°C
°C
Resistance
value
100
R2
k
Electrical Characteristics Ta = 25 C 3 C
Parameter
Symbol
VCBO IC = -10 μA, IE = 0
VCEO IC = -2 mA, IB = 0
Conditions
Min Typ Max
-50
-50
Unit
V
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open) ICBO
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open) IEBO
VCB = -50 V, IE = 0
VCE = -50 V, IB = 0
VEB = -6 V, IC = 0
-0.1
-0.5
-0.1
μA
μA
mA
-
ICEO
Forward current transfer ratio
hFE
VCE = -10 V, IC = -5 mA
80
Collector-emitter saturation voltage
VCE(sat) IC = -10 mA, IB = -0.5 mA
Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μA
R2
-0.25
V
V
V
k
-0.9
Input voltage
-0.4
Between emitter base resistance
-30% 100 +30%
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Note)1.
Page 1 of 3
Established : 2009-10-29
Revised : 2014-01-28
Doc No. TT4-EA-11719
Revision. 2
Transistors with Built-in Resistor
DRA2115G0L
Technical Data ( reference )
PT - Ta
IC - VCE
250
200
150
100
50
-0.12
Ta = 25 ℃
IB = -800 μA
-700μA
-0.1
-0.08
-0.06
-0.04
-0.02
-0
-600μA
-500μA
-400μA
-300μA
-200μA
-100μA
0
0
20 40 60 80 100 120 140 160 180 200
-0
-2
-4
-6
-8
-10
-12
Ambient temperature Ta (℃)
Collector-emitter voltage VCE (V)
hFE - IC
VCE = -10 V
Ta = 85 ℃
VCE(sat) - IC
-10
-1
350
300
250
200
150
100
50
IC/IB = 20
25 ℃
25 ℃
Ta = 85 ℃
-0.1
-40 ℃
-40 ℃
0
-0.01
-0.0001
-0.001
-0.01
-0.1
-0.0001
-0.001
-0.01
-0.1
Collector current IC (A)
Collector current IC (A)
Io - VIN
VIN - Io
-1.0E-02
-1.0E-03
-1.0E-04
-1.0E-05
-1.0E-06
-100
-10
-1
Vo = -5 V
Vo = -0.2 V
Ta = 85 ℃
-40 ℃
25 ℃
Ta = -40 ℃
25 ℃
85 ℃
-0.1
-0
-0.5
-1
-1.5
-0.0001
-0.001
-0.01
-0.1
Input voltage VIN (V)
Output current Io (A)
Page 2 of 3
Established : 2009-10-29
Revised : 2014-01-28
Doc No. TT4-EA-11719
Revision. 2
Transistors with Built-in Resistor
DRA2115G0L
Mini3-G3-B
Unit: mm
2.90+-0.0205
0.40+-0.0105
0.16+-0.0106
3
1
2
(0.95) (0.95)
1.9±0.1
(10°)
Land Pattern (Reference) (Unit: mm)
1.0
1.9
Page 3 of 3
Established : 2009-10-29
Revised : 2014-01-28
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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