DRA3A43T [PANASONIC]
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN;
| 型号： | DRA3A43T |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
DRA3A43T
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC3A43T
DRA9A43T in SSSMini3 type package
ꢀPackage
Features
ꢀCode
High forward current transfer ratio hFE with excellent linearity
Low collector-emitter saturation voltage VCE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
SSSMini3-F2-B
ꢀPin Name
1: Base
2: Emitter
3: Collector
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
ꢀMarking Symbol: GF
ꢀInternal Connection
ꢀAbsolute Maximum Ratings T = 25°C
a
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Symbol
VCBO
VCEO
IC
Rating
–50
Unit
V
C
E
R1
B
–50
V
–80
mA
mW
°C
Resistance value
R1
4.7
kΩ
Total power dissipation
PT
100
Junction temperature
Tj
150
Storage temperature
T
stg
–55 to +150
°C
ꢀElectrical Characteristics T = 25°C±3°C
a
Parameter
Symbol
Conditions
Min
–50
–50
Typ
Max
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
VCBO IC = –10 µA, IE = 0
VCEO IC = –2 mA, IB = 0
V
V
ICBO
ICEO
IEBO
hFE
VCB = –50 V, IE = 0
VCE = –50 V, IB = 0
VEB = –6 V, IC = 0
– 0.1
– 0.5
– 0.01
460
µA
µA
mA
V
VCE = –10 V, IC = –5 mA
160
–1.0
VCE(sat) IC = –10 mA, IB = – 0.5 mA
VI(on) VCE = – 0.2 V, IC = –5 mA
– 0.25
V
Input voltage (OFF)
VI(off) VCE = –5 V, IC = –100 µA
R1
– 0.4
V
Input resistance
–30%
4.7
+30%
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2011
Ver. AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DRA3A43T
SSSMini3-F2-B
Unit: mm
1.20 ±0.05
0.30 +−00..0025
3
2
1
0.13 +−00..0025
0.20 +−00..0025
(0.4)
(0.4)
0.80 ±0.05
(5°)
Ver. AED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202
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