DRA5114E0L [PANASONIC]
DRA5114E Silicon PNP epitaxial planar type; DRA5114E PNP硅外延平面型
| 型号： | DRA5114E0L |
| 厂家： | 
PANASONIC |
| 描述： | DRA5114E Silicon PNP epitaxial planar type |
| 文件： | 总5页 (文件大小：542K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DRA5114E
Silicon PNP epitaxial planar type
For digital circuits
Unit: mm
Complementary to DRC5114E
DRA2114E in SMini3 type package
Features
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
ꢀMarking Symbol: LB
Packaging
DRA5114E0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
1: Base
ꢀAbsolute Maximum Ratings T = 25°C
a
2: Emitter
3: Collector
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Symbol
VCBO
VCEO
IC
Rating
–50
Unit
V
Panasonic
SMini3-F2-B
JEITA
Code
SC-85
–50
V
–100
mA
mW
°C
C
E
Total power dissipation
PT
150
R1
R2
B
Junction temperature
Tj
150
Storage temperature
T
stg
–55 to +150
°C
R1
R2
10
10
kΩ
kΩ
Resistance value
ꢀElectrical Characteristics T = 25°C±3°C
a
Parameter
Symbol
Conditions
Min
–50
–50
Typ
Max
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
VCBO IC = –10 µA, IE = 0
VCEO IC = –2 mA, IB = 0
V
V
ICBO
ICEO
IEBO
hFE
VCB = –50 V, IE = 0
VCE = –50 V, IB = 0
VEB = –6 V, IC = 0
– 0.1
– 0.5
– 0.5
µA
µA
mA
V
VCE = –10 V, IC = –5 mA
35
VCE(sat) IC = –10 mA, IB = – 0.5 mA
VI(on) VCE = – 0.2 V, IC = –5 mA
– 0.25
–2.1
V
Input voltage (OFF)
VI(off) VCE = –5 V, IC = –100 µA
– 0.8
+30%
1.2
V
Input resistance
R1
–30%
0.8
10
kΩ
Resistance ratio
R1 / R2
1.0
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2012
Ver. DED
1
DRA5114E
PT T
IC VCE
hFE IC
a
−120
−100
−80
−60
−40
−20
0
300
250
200
150
100
50
250
200
V
CE = −10 V
Ta = 25°C
I
B = −800 µA
−700 µA
−600 µA
−500 µA
Ta = 85°C
25°C
150
100
−400 µA
−300 µA
−30°C
−200 µA
50
−100 µA
0
0
0
0
−2
−4
−6
−8 −10 −12
− 0.1
−1
−10
−100
40
80
120
160
(
200
Collector-emitter voltage VCE (V)
)
Collector current IC (mA)
Ambient temperature Ta °C
VCE(sat) IC
IO VIN
VIN IO
−10
−1
−10
−1
−100
−10
VO = −5 V
IC / IB = 20
V
O = − 0.2 V
Ta = 85°C
25°C
−10−1
−10−2
−10−3
−30°C
25°C
Ta = 85°C
Ta = 85°C
− 0.1
−1
−30°C
−30°C
25°C
− 0.01
− 0.1
− 0.1
−1
−10
−100
0
− 0.5
−1.0
−1.5
−2.0
− 0.1
−1
−10
−100
Collector current IC (mA)
Output current IO (mA)
(V)
Input voltage VIN
Ver. DED
2
DRA5114E
Unit: mm
SMini3-F2-B
Land Pattern (Reference) (Unit: mm)
Ver. DED
3
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
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your using the products described in this book for any special application, unless our company agrees to your using the products in
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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