DRAF123J [PANASONIC]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ML3-N4-B, 3 PIN;


型号：	DRAF123J
厂家：	PANASONIC
描述：	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ML3-N4-B, 3 PIN 开关晶体管
文件：	总3页 (文件大小：418K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DRAF123J

Total pages

page

Tentative

DRAF123J

Silicon PNP epitaxial planar type

For digital circuits

Marking Symbol : L4

Package Code : ML3-N4-B

Internal Connection

Absolute Maximum RatingsꢀTa = 25 °C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector current

Symbol

VCBO

VCEO

Rating

-50

Unit

-100

100

150

°C

Total power dissipation

Junction temperature

Storage temperature

Tstg

-55 to +150

°C

kΩ

Resistance R1 2.2

R2 47

value

1. Base

2. Emitter

3. Collector

Pin name

Electrical CharacteristicsꢀTa = 25 °C±3 °C

Parameter

Symbol

Conditions

Min Typ Max

-50

Unit

μA

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

VCBO IC = -10 μA, IE = 0

VCEO IC = -2 mA, IB = 0

ICBO

ICEO

IEBO

hFE

VCB = -50 V, IE = 0

VCE = -50 V, IB = 0

VEB = -6 V, IC = 0

-0.1

-0.5

-0.2

VCE = -10 V, IC = -5 mA

Collector-emitter saturation voltage

VCE(sat) IC = -10 mA, IB = -0.5 mA

-0.25

Vi(on) VCE = -0.2 V, IC = -5 mA

Vi(off) VCE = -5 V, IC = -100 μA

-1.2

Input voltage

-0.4

kΩ

Input resistance

Resistance ratio

R1/R2

-30% 2.2 +30%

0.037 0.047 0.057

Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring

methods for transistors.

Packing

Embossed type (Thermo-compression sealing) : 10 000 pcs / reel

2010.2.25

Prepared

2010.709

Revised

Semiconductor Company, Panasonic Corporation

ML3-N4-B

Unit: mm

0.39 −⁺0⁰.^.0⁰3¹

0.60 ±0.05

0.50 ±0.05

0.05 ±0.03

0.15 ±0.05

0.35 ±0.01

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semiconductors described in this book

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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

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defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

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thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

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20100202

DRAF123J [PANASONIC]

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