DRC2523Y0L [PANASONIC]

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN;
DRC2523Y0L
型号: DRC2523Y0L
厂家: PANASONIC    PANASONIC
描述:

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN

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中文:  中文翻译
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Doc No. TT4-EA-12306  
Revision. 3  
Transistors with Built-in Resistor  
DRC2523Y0L  
DRC2523Y0L  
Silicon NPN epitaxial planar type  
Unit: mm  
For digital circuits  
2.9  
Complementary to DRA2523Y  
0.4  
0.16  
3
Features  
Low collector-emitter saturation voltage Vce(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
1
2
1.1  
Marking Symbol:  
Packaging  
TH  
(0.95)(0.95)  
1.9  
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  
1. Base  
2. Emitter  
3. Collector  
Panasonic  
JEITA  
Mini3-G3-B  
SC-59A  
TO-236AA/SOT-23  
Absolute Maximum Ratings Ta = 25 C  
Code  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
50  
500  
200  
Unit  
V
V
mA  
mW  
°C  
Internal Connection  
C
Total power dissipation  
Junction temperature  
PT  
Tj  
R1  
B
150  
R2  
Operating ambient temperature  
Storage temperature  
Topr  
Tstg  
-40 to +85  
-55 to +150  
°C  
°C  
E
k  
k  
Resistance R1  
R2  
2.2  
10  
value  
Electrical Characteristics Ta = 25 C 3 C  
Parameter  
Symbol  
VCBO IC = 10 μA, IE = 0  
VCEO IC = 2 mA, IB = 0  
Conditions  
Min Typ Max  
50  
50  
Unit  
V
V
μA  
μA  
mA  
-
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
1
1
1
VCE = 10 V, IC = 100 mA  
60  
Collector-emitter saturation voltage  
VCE(sat) IC = 100 mA, IB = 5 mA  
Vi(on) VCE = 0.2 V, IC = 50 mA  
Vi(off) VCE = 5 V, IC = 100 μA  
R1  
0.25  
V
V
V
k  
-
1.9  
Input voltage  
0.4  
Input resistance  
Resistance ratio  
-30% 2.2 +30%  
0.17 0.22 0.27  
R1/R2  
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.  
Note)1.  
1 of 3  
Page  
Established : 2010-02-04  
Revised  
: 2014-03-25  
Doc No. TT4-EA-12306  
Revision. 3  
Transistors with Built-in Resistor  
DRC2523Y0L  
Technical Data ( reference )  
PT - Ta  
IC - VCE  
250  
200  
150  
100  
50  
0.3  
IB = 1.0 mA  
0.9 mA  
Ta = 25 ℃  
0.25  
0.8 mA  
0.7 mA  
0.6 mA  
0.2  
0.15  
0.1  
0.5 mA  
0.4 mA  
0.3 mA  
0.2 mA  
0.1 mA  
0.05  
0
0
0
20 40 60 80 100 120 140 160 180 200  
0
2
4
6
8
10  
12  
Collector-emitter voltage VCE (V)  
Ambient temperature Ta ()  
hFE - IC  
VCE(sat) - IC  
10  
1
350  
300  
250  
200  
150  
100  
50  
IC/IB = 20  
VCE = 10 V  
Ta = 85 ℃  
25 ℃  
Ta = 85 ℃  
25 ℃  
0.1  
-40 ℃  
-40 ℃  
0.1  
0
0.01  
0.0001  
0.001  
0.01  
0.1  
1
0.001  
0.01  
1
Collector current IC (A)  
Collector current IC (A)  
Io - VIN  
VIN - Io  
1.E-02  
100  
10  
1
Vo = 5 V  
Ta = 85 ℃  
Vo = 0.2 V  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
25 ℃  
-40 ℃  
25 ℃  
Ta = -40 ℃  
85 ℃  
0.1  
0.001  
0
0.5  
1
1.5  
0.01  
0.1  
1
Input voltage VIN (V)  
Output current Io (A)  
2 of 3  
Page  
Established : 2010-02-04  
Revised : 2014-03-25  
Doc No. TT4-EA-12306  
Revision. 3  
Transistors with Built-in Resistor  
DRC2523Y0L  
Mini3-G3-B  
Unit: mm  
2.90+-0.0205  
0.40+-0.0105  
0.16+-0.0106  
3
1
2
(0.95) (0.95)  
1.9±0.1  
(10°)  
Land Pattern (Reference) (Unit: mm)  
1.0  
1.9  
3 of 3  
Page  
Established : 2010-02-04  
Revised : 2014-03-25  
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semiconductors described in this book  
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regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any  
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any  
other company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications  
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,  
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of  
the products may directly jeopardize life or harm the human body.  
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
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20100202  

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