DSA9G01 [PANASONIC]
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, 3 PIN;
| 型号： | DSA9G01 |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：537K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
DSA9G01
Silicon NPN epitaxial planar type
For high-frequency amplification
DSA5G01 in SSMini3 type package
Package
ꢀCode
Features
High transition frequency fT
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
SSMini3-F3-B
ꢀPin Name
1. Base
Packaging
2. Emitter
3. Collector
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Marking Symbol: A4
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
–30
Unit
V
–20
V
–5
V
–30
mA
mW
°C
°C
Collector power dissipation
Junction temperature
PC
125
Tj
150
Storage temperature
T
stg
–55 to +150
Electrical Characteristics Ta = 25°C±3°C
Parameter
Base-emitter voltage
Symbol
Conditions
Min
Typ
Max
Unit
V
VBE
ICBO
ICEO
IEBO
hFE
VCE = –10 V, IC = –1 mA
VCB = –10 V, IE = 0
– 0.7
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
– 0.1
–100
–10
µA
µA
µA
VCE = –20 V, IB = 0
VEB = –5 V, IC = 0
VCE = –10 V, IC = –1 mA
70
220
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = –10 mA, IB = –1 mA
– 0.1
300
V
fT
VCE = –10 V, IC = –1 mA
150
MHz
Reverse transfer capacitance
(Common emitter)
Cre
VCE = –10 V, IC = –1 mA, f = 10.7 MHz
1.0
pF
Noise figure
NF
Zrb
VCE = –10 V, IC = –1 mA, f = 5 MHz
VCE = –10 V, IC = –1 mA, f = 2 MHz
2.8
22
dB
Reverse transfer impedance
W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Code
Rank
B
B
C
C
0
No-rank
70 to 220
A4
hFE
70 to 140
A4B
110 to 220
A4C
Marking Symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: January 2011
Ver. BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSA9G01
PC T
IC VCE
hFE IC
a
250
150
125
100
−50
−40
V
CE = −10 V
Ta = 25°C
Ta = 85°C
200
150
100
50
−400 µA
−450 µA
B = −500 µA
I
−30
−20
−10
−350 µA
−300 µA
−250 µA
25°C
75
50
25
−200 µA
−150 µA
−30°C
−100 µA
−50 µA
0
0
0
0
−10−1
−1
−10
−
102
40
80
120
160
200
0
−2
−4
−6
−8 −10 −12
(
)
Ambient temperature Ta °C
Collector current IC (mA)
Collector-emitter voltage VCE (V)
VCE(sat) IC
IC VBE
Cob VCB
−10
−1
−40
−30
IC / IB = 10
IE = 0
f = 1 MHz
4.0
3.0
2.0
1.0
0
V
CE = −10 V
Ta = 25°C
25°C
Ta = 85°C
−30°C
−20
−10
Ta = 85°C
−10−1
−30°C
25°C
−10−2
0
−10−1
−1
−10
−102
0
− 0.4
− 0.8
−1.2
−1
−10
−102
Base-emitter voltage VBE (V)
Collector current IC (mA)
Collector-base voltage VCB (V)
fT IC
350
300
250
VCE = −10 V
T
a = 25°C
200
150
100
50
0
−10−1
−1
−10
−102
Collector current IC (mA)
Ver. BED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
DSA9G01
SSMini3-F3-B
Unit: mm
1.60 +−00..0035
0.26 +−00..0025
3
1
2
0.13 +−00..0025
(0.50)
(0.50)
1.00 ±0.05
(5°)
Ver. BED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202
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