DSC9G02D0L [PANASONIC]
RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN;
| 型号： | DSC9G02D0L |
| 厂家： | 
PANASONIC |
| 描述： | RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：771K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSC9G02
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
DSC5G02 in SSMini3 type package
Features
High transition frequency fT
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: C5
Packaging
DSC9G02×0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
1: Base
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
2: Emitter
3: Collector
Panasonic
JEITA
30
20
V
SSMini3-F3-B
SC-89
3
15
V
Code
SOT-490
mA
mW
°C
°C
°C
Collector power dissipation
Junction temperature
PC
125
Tj
150
Operating ambient temperature
Storage temperature
Topr
–40 to +85
–55 to +150
T
stg
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
30
3
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
VCBO IC = 10 mA, IE = 0
VEBO IE = 10 mA, IC = 0
V
VBE
hFE
fT
VCE = 6 V, IC = 1 mA
VCE = 6 V, IC = 1 mA
VCE = 6 V, IC = 1 mA
0.72
V
1
Forward current transfer ratio *
65
260
Transition frequency
450
650
0.6
MHz
Reverse transfer capacitance
(Common emitter)
Cre
VCE = 6 V, IC = 1 mA , f = 10.7 MHz
pF
Power gain
PG
NF
VCE = 6 V, IC = 1 mA , f = 100 MHz
VCE = 6 V, IC = 1 mA , f = 100 MHz
24
dB
dB
Noise figure
3.3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Rank classification
*
Code
Rank
C
C
D
D
0
No-rank
65 to 260
C5
hFE
65 to 160
C5C
100 to 260
C5D
Marking Symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: February 2014
Ver. BED
1
DSC9G02
PC T
IC VCE
hFE IC
a
200
160
120
80
20
16
150
125
100
75
VCE = 6 V
Ta = 25°C
Ta = 85°C
I
B = 120 µA
110 µA
100 µA
90 µA
80 µA
70 µA
60 µA
50 µA
40 µA
30 µA
25°C
12
8
−40°C
50
4
40
25
0
0
0
0
10−1
1
10
102
0
2
4
6
8
10
12
40
80
120
160
200
Collector current IC (mA)
(
)
Collector-emitter voltage VCE (V)
Ambient temperature Ta °C
VCE(sat) IC
IC VBE
Cob VCB
10
1
2.0
20
15
10
5
IC / IB = 10
IE = 0
f = 1 MHz
V
CE = 6 V
Ta = 25°C
25°C
1.6
1.2
0.8
0.4
0
Ta = 85°C
−40°C
Ta = 85°C
−40°C
25°C
10−1
10−2
10−1
0
1
10
102
1
10
100
0
0.2 0.4 0.6 0.8 1.0 1.2
Collector current IC (mA)
Collector-base voltage VCB (V)
Base-emitter voltage VBE (V)
fT IC
1600
1200
800
400
0
VCE = 6 V
Ta = 25°C
10−1
1
10
102
Collector current IC (mA)
Ver. BED
2
DSC9G02
Unit: mm
SSMini3-F3-B
Land Pattern (Reference) (Unit: mm)
Ver. BED
3
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semiconductors described in this book
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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20100202
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