FC8V33030L [PANASONIC]
Dual N-channel MOSFET For DC-DC Converter;
| 型号： | FC8V33030L |
| 厂家： | 
PANASONIC |
| 描述： | Dual N-channel MOSFET For DC-DC Converter |
| 文件： | 总7页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FC8V33030L
FC8V33030L
Dual N-channel MOSFET
Unit: mm
For DC-DC Converter
Features
y Low drain-source ON resistance:RDS(on)typ. = 22 mΩ (VGS = 4.5 V)
y High-speed switching :Qg = 3.8 nC
y Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol:6A
5. Drain(FET2)
6. Drain(FET2)
7. Drain(FET1)
8. Drain(FET1)
1. Source(FET1)
2. Gate(FET1)
3. Source(FET2)
4. Gate(FET2)
Basic Part Number
Dual Nch MOS 33 V (Individual)
Packaging
FC8V33030LꢀEmbossed type (Thermo-compression sealing):
3 000 pcs / reel (standard)
Panasonic
JEITA
WMini8-F1
SC-115
―
Code
Absolute Maximum RatingsꢀTa = 25 °C
Internal Connection
Parameter
Drain-source Voltage
Gate-source Voltage
Symbol
VDS
VGS
Rating
33
Unit
V
V
FET1
1
2
3
4
8
7
6
5
20
6.5
8
Drain Current (Steady State) *1
Drain Current (t=10s) *1
ID
FET1
FET2
FET2
Drain Current (Pulsed) *1,2
Source Current (Pulsed)
IDp
26
A
ISp
(BD)
6.5
(Body Diode) *1,2
Power Dissipation (Steady State) *1
Power Dissipation (t=10s) *1
Channel Temperature
1
1.5
PD
W
Pin name
Overall
Tch
5. Drain(FET2)
6. Drain(FET2)
7. Drain(FET1)
8. Drain(FET1)
150
°C
°C
1. Source(FET1)
2. Gate(FET1)
3. Source(FET2)
4. Gate(FET2)
Storage Temperature Range
Tstg
-55 to +150
Note: *1 Device mounted on a glass-epoxy board (See Figure 1)
*2 Pulse test: Ensure that the channel temperature does not exceed 150 °C.
FR-4 (Unit: mm)
25.4 x 25.4 x 0.8
(Figure 1) Glass-Epoxy Board
Publication date: October 2012
Ver. BED
1
FC8V33030L
Electrical CharacteristicsꢀTa = 25 °C ± 3 °C
Static Characteristics
Parameter
Symbol
VDSS
IDSS
IGSS
Vth
RDS(on)1
RDS(on)2
Conditions
ID = 1 mA, VGS = 0 V
VDS = 33 V, VGS = 0 V
VGS = ±16 V, VDS = 0 V
ID = 0.48 mA, VDS = 10 V
ID = 3.3 A, VGS = 10 V
ID = 3.3 A, VGS = 4.5 V
Min. Typ. Max.
33
Unit
V
μA
μA
V
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-source Leakage Current
Gate-source Threshold Voltage
10
10
1
2.5
20
35
15
22
*1
mΩ
Drain-source On-state Resistance
Note *1 Pulse test: Ensure that the channel temperature does not exceed 150 °C
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
td(on)
tr
360
70
50
8
3
24
9
VDS = 10 V, VGS = 0 V,
f = 1 MHz
pF
ns
VDD = 15 V, VGS = 0 to 10 V
ID = 3.3 A (Figure 2)
VDD = 15 V, VGS = 10 to 0 V
ID = 3.3 A (Figure 2)
Turn-Off Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Gate-source Charge
Gate-drain Charge
Qg
Qgs
Qgd
3.8
1.4
1.6
VDD = 15 V, VGS = 0 to 4.5 V,
ID = 6.5 A
nC
Body Diode Characteristic
Diode Forward Voltage *1
VSD
IS = 3.3 A, VGS = 0 V
0.8
1.2
V
Note *1 Pulse test: Ensure that the channel temperature does not exceed 150 °C
Ver. BED
2
FC8V33030L
VDD = 15 V
ID =3.3A
Vin
Vout
10V
0V
PW = 10 μs
D.C. ≤ 1 %
D
G
Vin
50 Ω
S
90 %
Vin
10 %
90 %
90 %
Vout
10 %
10 %
tr
tf
td(on)
td(off)
(Figure 2) Measuremet circuit for Turn-On Delay Time/Rise Time/Turn-Off Delay Time/Fall Time
Ver. BED
3
FC8V33030L
6
5
4
3
2
1
0
3
2
1
0
VGS = 10.0 V
4.0 V
Ta = 85 °C
4.5 V
3.5 V
25 °C
3.0 V
-30 °C
0
0.1
0.2
0.3
0
1
2
3
4
Drain-source Voltage VDS (V)
Gate-source Voltage VGS (V)
ID - VDS
ID - VGS
100
10
1
0.3
0.25
0.2
VGS = 4.5 V
ID = 3.3 A
10.0 V
0.15
0.1
1.65 A
0.05
0
0.83 A
1
10
0
2
4
6
8
10
Drain Current ID (A)
RDS(on) - ID
Gate-source Voltage VGS (V)
VDS - VGS
10000
1000
100
5
4
3
2
1
0
VDD = 15 V
Ciss
Coss
Crss
10
0
1
2
3
4
5
0.1
1
10
100
Total Gate Charge Qg (nC)
Drain-source Voltage VDS (V)
Capacitance - VDS
Dynamic Input/Output Characteristics
Ver. BED
4
FC8V33030L
50
45
40
35
30
25
20
15
10
5
4
3
2
1
0
VGS = 4.5 V
10.0 V
0
-50
0
50
100
150
-50
0
50
100
150
200
Temperature Ta (°C)
Temperature Ta (°C)
Vth - Ta
RDS(on) - Ta
2
1.5
1
Device mounted on a glass-epoxy board
(25.4 x 25.4 x 0.8 mm)
0.5
0
0
50
100
150
Temperature Ta (°C)
PD - Ta
100
10
1000
IDp = 26 A
100
10
1
1
Operation in this area
is limited by RDS(on)
1 ms
10 ms
100 ms
1 s
0.1
0.01
Ta = 25 °C, Glass epoxy board (25.4 × 25.4 × t0.8 mm)
coated with copper foil,which has more than 300 mm2.
DC
0.1
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width tsw (s)
Rth -tsw
Drain-source Voltage VDS (V)
Safe Operating Area
Ver. BED
5
FC8V33030L
WMini8-F1
Unit: mm
Land Pattern (Reference) (Unit: mm)
Ver. BED
6
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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20100202
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