GN1022 [PANASONIC]

GaAs N Channel MES Type IC; 砷化镓N沟道MES型IC


型号：	GN1022
厂家：	PANASONIC
描述：	GaAs N Channel MES Type IC 砷化镓N沟道MES型IC
文件：	总2页 (文件大小：91K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

RF Amplifier

ETC

Wide Band Low Power Amplifier, 50MHz Min, 800MHz Max, GAAS,

PANASONIC

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, MINI-4

PANASONIC

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, MINI-4

PANASONIC

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, MINI-4

PANASONIC

Narrow Band Low Power Amplifier,

PANASONIC

Microwave/Millimeter Wave Amplifier

ETC

Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN

HITACHI

15A, 1200V, N-CHANNEL IGBT, TO-3P, TO-3P, 3 PIN

RENESAS

30A, 1200V, N-CHANNEL IGBT

RENESAS

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel

HITACHI

50A, 1200V, N-CHANNEL IGBT

RENESAS