LN155 [PANASONIC]
GaAs Infrared Light Emitting Diode; 砷化镓红外发光二极管
| 型号： | LN155 |
| 厂家： | 
PANASONIC |
| 描述： | GaAs Infrared Light Emitting Diode |
| 文件： | 总3页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared Light Emitting Diodes
LNA2603F (LN155)
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
2.1±0.15
4.5±0.15
3.5±0.15
1.6±0.15
0.8±0.1
Features
High-power output, high-efficiency : PO = 6 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
λP = 940 nm (typ.)
Long lifetime, high reliability
Thin side-view type package
0.45±0.15
2-1.2±0.3
2-0.45±0.15
1
2
2.54
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward
Symbol
Ratings
160
Unit
mW
mA
A
1: Anode
2: Cathode
PD
current
(DC1)0I0
1.5
F
*
Pulse forward current
IFP
Reverse
voltage
(DC)V3
–25 to +85
– 40 to +100
V
R
Operating ambient temperature
Storage temperature
Topr
˚C
Tstg
˚C
*
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Symbol
PO
Conditions
min
typ
max
Unit
mW
nm
nm
V
IF = 50mA
3
6
Peak emission wavelength
Spectral half band width
λP
IF = 50mA
IF = 50mA
940
50
∆λ
Forward
Reverse
voltage
current
(DIC)=V100mA
1.3
1.6
10
F
F
(VDRC=)I3V
µA
pF
R
Capacitance between pins
Rise time
Ct
VR = 0V, f = 1MHz
45
1
tr
tf
θ
µs
IFP = 100mA
Fall time
1
µs
Half-power angle
The angle in which radiant intencity is 50%
80
deg.
Note)The part number in the parenthesis shows conventional part number.
1
Infrared Light Emitting Diodes
LNA2603F
IF — Ta
IFP — Duty cycle
IFP — VF
120
10 4
10 3
10 2
10
tw = 10µs
f = 100Hz
Ta = 25˚C
tw = 10µs
Ta = 25˚C
10 2
10
1
100
80
60
10 –1
10 –2
40
20
0
1
10 –3
10 –1
– 25
0
20
40
60
80
100
10 4
120
10 –2
10 –1
1
10
10 2
0
1
2
3
4
5
Ambient temperature Ta (˚C )
Duty cycle (%)
Forward voltage VF (V)
∆PO — IFP
VF — Ta
∆PO — Ta
1.6
1.2
0.8
0.4
0
10
(1) tw = 10µs
f = 100Hz
(2) DC
IF = 50mA
10 3
IF = 100mA
Ta = 25˚C
10 2
10
50mA
1mA
(1)
1
(2)
1
10 –1
10 –2
10 –1
– 40
1
10
10 2
10 3
– 40
0
40
80
120
0
40
80
Pulse forward current IFP (mA)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
λP — Ta
Spectral characteristics
Directivity characteristics
0˚ 10˚ 20˚ 30˚
1000
980
960
940
920
900
100
80
60
40
20
0
IF = 50mA
Ta = 25˚C
40˚
IF = 50mA
100
50˚
60˚
80
60
40
70˚
80˚
90˚
100˚
20
110˚
120˚
130˚
140˚
– 40
0
40
80
860 900 940 980 1020 1060 1100
Ambient temperature Ta (˚C )
Wavelength λ (nm)
2
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
DANGER
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the
products or technologies described in this material and controlled under the "Foreign Exchange and Foreign
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(2) The technical information described in this material is limited to showing representative characteristics and
applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
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equipment (such as office equipment, communications equipment, measuring instruments and household ap-
pliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
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• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without notice for
reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the prod-
ucts, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifi-
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(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the
range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for
any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended, so that
such equipment may not violate relevant laws or regulations because of the function of our products.
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Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconduc-
tor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available product
types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information before
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the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any
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2001 MAR
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