LN184 [PANASONIC]

GaAlAs Infrared Light Emitting Diode; GaAlAs的红外发光二极管
LN184
型号: LN184
厂家: PANASONIC    PANASONIC
描述:

GaAlAs Infrared Light Emitting Diode
GaAlAs的红外发光二极管

二极管
文件: 总2页 (文件大小:44K)
中文:  中文翻译
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Infrared Light Emitting Diodes  
LN184  
GaAlAs Infrared Light Emitting Diode  
Unit : mm  
ø4.6±0.15  
Light source for distance measuring systems  
Glass window  
Spherical lens  
Features  
High-power output, high-efficiency : PO = 5 mW (typ.)  
Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.)  
Infrared light emission close to monochromatics light : λP = 880 nm  
(typ.)  
2-ø0.45±0.05  
2
1
Narrow directivity using spherical lenses; works well with optical  
systems in auto focus systems  
2.45±0.25  
Absolute Maximum Ratings (Ta = 25˚C)  
ø4.0±0.1  
Parameter  
Power dissipation  
Symbol  
Ratings  
Unit  
mW  
mA  
mA  
V
1: Anode  
2: Cathode  
ø5.75max.  
PD  
190  
Forward current (DC)  
Pulse forward current  
Reverse voltage (DC)  
Operating ambient temperature  
Storage temperature  
IF  
90  
230  
*
IFP  
VR  
Topr  
Tstg  
3
–25 to +85  
˚C  
– 40 to +100  
˚C  
* Pulse conditions : Pulse of f = 10 kHz and duty cycle = 50% modulated  
with pulse of f = 0.375 Hz (1.6 s) and duty cycle = 37.5%  
Electro-Optical Characteristics (Ta = 25˚C)  
Parameter  
Radiant power  
Symbol  
Conditions  
IF = 100mA  
min  
3.5  
typ  
max  
Unit  
mW  
nm  
nm  
V
PO  
λP  
∆λ  
VF  
IR  
tr  
Peak emission wavelength  
Spectral half band width  
Forward voltage (DC)  
Reverse current (DC)  
Rise time  
IF = 100mA  
880  
50  
IF = 100mA  
IF = 100mA  
1.55  
1.9  
10  
VR = 3V  
µA  
ns  
IFP = 100mA  
IFP = 100mA  
The angle in which radiant intencity is 50%  
20  
20  
20  
Fall time  
tf  
ns  
Half-power angle  
θ
deg.  
1
LN184  
Infrared Light Emitting Diodes  
IF — Ta  
IF — VF  
IFP — VFP  
120  
100  
80  
160  
140  
120  
100  
80  
1
t
w = 10µs  
Ta = 25˚C  
f = 100Hz  
Ta = 25˚C  
60  
10 –1  
60  
40  
40  
20  
20  
0
– 25  
0
10 –2  
0
20  
40  
60  
80  
100  
0
0.5  
1.0  
1.5  
2.0  
0
1
2
3
4
5
Ambient temperature Ta (˚C )  
Forward voltage VF (V)  
Pulse forward voltage VFP (V)  
PO — IFP  
VF — Ta  
PO — Ta  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
10  
(1) tw = 10µs  
IF = 100mA  
10 3  
Duty = 0.1%  
(2) tw = 50µs  
Duty = 50%  
(3) DC  
10 2  
10  
Ta = 25˚C  
IF = 100mA  
(1)  
(2)  
(3)  
1
1
10mA  
1mA  
10 –1  
10 –2  
10 –1  
– 40  
10 –3  
10 –2  
10 –1  
1
10  
– 40  
0
40  
80  
120  
0
40  
80  
Pulse forward current IFP (A)  
Ambient temperature Ta (˚C )  
Ambient temperature Ta (˚C )  
λP — Ta  
Spectral characteristics  
Directivity characteristics  
0˚  
100  
10˚  
20˚  
1000  
900  
800  
700  
600  
100  
IF = 100mA  
IF = 100mA  
90  
80  
70  
60  
50  
40  
30  
20  
80  
60  
40  
20  
0
30˚  
40˚  
50˚  
60˚  
70˚  
80˚  
90˚  
– 40  
0
40  
80  
120  
780 820 860 900 940 980 1020  
Ambient temperature Ta (˚C )  
Wavelength λ (nm)  
2

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