LNA4602L [PANASONIC]
GaAlAs Infrared Light Emitting Diode; GaAlAs的红外发光二极管
| 型号： | LNA4602L |
| 厂家： | 
PANASONIC |
| 描述： | GaAlAs Infrared Light Emitting Diode |
| 文件： | 总1页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared Light Emitting Diodes
LNA4602L
GaAlAs Infrared Light Emitting Diode
Unit: mm
For optical control systems
R1.75±0.1
4.2±0.3
2.3 1.9
■ Features
4.5±0.3
2.54±0.25
• High-power output, high-efficiency
• Light-emitting pattern of almost point source
• Ultra-miniature, thin side-view type package
1.2
2− 0.98±0.2
1.66±0.25
■ Absolute Maximum Ratings Ta = 25°C
2− 0.45±0.15
0.45±0.15
Parameter
Symbol
IFP
Ratings
1.2
Unit
A
Pulse forward current *
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
1
2
2.54
VR
3
V
1: Cathode
2: Anode
Topr
−20 to +60
−30 to +70
°C
°C
Tstg
Note) *: f = 100 Hz, Duty Cycle = 0.1%
■ Electro-optical Characteristics Ta = 25°C
Parameter
Radiant power
Symbol
PO
Conditions
min
typ
max
Unit
mW
nm
nm
V
IF = 50 mA
3
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Peak forward voltage
Reverse current (DC)
Half-power angle
λP
IF = 50 mA
IF = 50 mA
IF = 50 mA
850
35
∆λ
VF
1.5
2.9
1.9
3.8
100
VFP
IR
IFP = 1 A, tW = 0.14 ms
VR = 3 V
V
µA
°
θ
The angle in which radiant intencity is 50%
30
Note) 1. ∆PO≤35% at t = 10 000 shot
f = 500 Hz, Duty = 7%
32 ms
1 s (1 shot)
2. Frequency that the modulated total output power decreases by 3 dB from that of at 1 MHz.
PO (fC MHz)
Cut-off Frequcency: 200 MHz fC: 10 log
= −3
PO (1 MHz)
1
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