MA200WK [PANASONIC]

Rectifier Diode, Silicon,;
MA200WK
型号: MA200WK
厂家: PANASONIC    PANASONIC
描述:

Rectifier Diode, Silicon,

光电二极管
文件: 总3页 (文件大小:156K)
中文:  中文翻译
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Switching Diodes  
MA200WK  
Silicon epitaxial planer type  
Unit : mm  
For switching circuits  
2.8 +00..32  
0.65±0.15  
1.5 +00..0255  
0.65±0.15  
Features  
Small reverse current IR, with extremely small leakage current  
1
2
trr of a soft recovery type  
3
Absolute Maximum Ratings (Ta= 25˚C)  
0.1 to 0.3  
Rat
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Symbol  
VR  
Unit  
V
0.4±0.2  
80  
VRM  
V
1 : Anode 1  
2 : Anode 2  
3 : Cathode 1, 2  
JEDEC : TO-236  
EIAJ : SC-59  
Mini Type Package (3-pin)  
100  
Single  
Double  
Single  
Doube  
ingle  
Doble  
Forward current (DC)  
Peak forward current  
mA  
mA  
mA  
10  
225  
Marking Symbol : M4D  
IFM  
340  
Internal Connection  
500  
Non-repetitive peak  
forward surge current  
IFSM  
*
70  
150  
1
3
2
Junction tempeatur
Storage emperatu
T
˚C  
˚C  
– 55 to +150  
Tstg  
* t=1s  
Electrical teristics (Ta= 25˚C)  
Para
Symbol  
Condition  
min  
80  
typ  
max  
100  
20  
Unit  
nA  
nA  
V
IR1  
VR= 75V  
Reverse current (DC)  
IR2  
VR= 5V, Ta= 85˚C  
IF=100mA  
Forward voltage (DC)  
Reverse voltage (DC)  
Terminal capacitance  
VF  
1.2  
VR  
IR=100µA  
V
Ct  
VR= 0V, f=1MHz  
IF=10mA, VR= 6V  
Irr= 0.1 · IR, RL=100  
2.5  
pF  
*
Reverse recovery time  
trr  
100  
ns  
Note 1 : Rated input/output frequency : 100MHz  
2 : * trr measuring circuit  
Marking  
Bias Insertion  
Unit N-50BU  
Input Pulse  
Output Pulse  
t
t
p
r
M4D  
t
10%  
t
rr  
I
F
t
A
90%  
t =2µs  
V
R
I =0.1 · I  
rr  
R
I =10mA  
p
F
t =0.35ns  
r
δ=0.05  
V =6V  
R
R =100Ω  
L
Pulse Generator  
PG-10N  
s
W.F.Analyzer  
SAS-8130  
R =50Ω  
i
R =50Ω  
Switching Diodes  
MA200WK  
IF – VF  
VF – Ta  
IR – VR  
102  
10  
103  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Ta=150˚C  
100˚C  
102  
10  
Ta=150˚C  
IF=10mA  
1
100˚C  
10m
1
10–1  
10–2  
10–3  
25˚C  
–20˚C  
10–1  
10–2  
0–3  
25˚C  
0
20  
40  
60  
80  
100 120  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
40  
80  
120
(
V
)
Reverse voltage VR  
(
V
)
(
)
Forward voltage VF  
Aient tperature Ta ˚C  
IR – Ta  
Ct – VR  
102  
10  
6
5
2
1
0
Ta=25˚C  
V0V  
5V  
6V  
1
10–1  
10–2  
10–3  
–40  
0
40  
160 200  
0
20  
40  
60  
80  
100 120  
(
)
Ambient temperaa ˚C  
(
V
)
Reverse oltage VR  
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-  
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product  
Standards in advance to make sure that the latest specifictions saisfy your requirements.  
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions  
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute  
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any  
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure  
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire  
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.  
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which  
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.  
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita  
Electric ndurial Co., Ltd.  

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