MA200WK [PANASONIC]
Rectifier Diode, Silicon,;型号: | MA200WK |
厂家: | PANASONIC |
描述: | Rectifier Diode, Silicon, 光电二极管 |
文件: | 总3页 (文件大小:156K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Switching Diodes
MA200WK
Silicon epitaxial planer type
Unit : mm
For switching circuits
2.8 +–00..32
0.65±0.15
1.5 +–00..0255
0.65±0.15
■ Features
●
Small reverse current IR, with extremely small leakage current
1
2
●
trr of a soft recovery type
3
■ Absolute Maximum Ratings (Ta= 25˚C)
0.1 to 0.3
Rat
Parameter
Reverse voltage (DC)
Peak reverse voltage
Symbol
VR
Unit
V
0.4±0.2
80
VRM
V
1 : Anode 1
2 : Anode 2
3 : Cathode 1, 2
JEDEC : TO-236
EIAJ : SC-59
Mini Type Package (3-pin)
100
Single
Double
Single
Doube
ingle
Doble
Forward current (DC)
Peak forward current
mA
mA
mA
10
225
Marking Symbol : M4D
IFM
340
■ Internal Connection
500
Non-repetitive peak
forward surge current
IFSM
*
70
150
1
3
2
Junction tempeatur
Storage emperatu
T
˚C
˚C
– 55 to +150
Tstg
* t=1s
■ Electrical teristics (Ta= 25˚C)
Para
Symbol
Condition
min
80
typ
max
100
20
Unit
nA
nA
V
IR1
VR= 75V
Reverse current (DC)
IR2
VR= 5V, Ta= 85˚C
IF=100mA
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
VF
1.2
VR
IR=100µA
V
Ct
VR= 0V, f=1MHz
IF=10mA, VR= 6V
Irr= 0.1 · IR, RL=100Ω
2.5
pF
*
Reverse recovery time
trr
100
ns
Note 1 : Rated input/output frequency : 100MHz
2 : * trr measuring circuit
■ Marking
Bias Insertion
Unit N-50BU
Input Pulse
Output Pulse
t
t
p
r
M4D
t
10%
t
rr
I
F
t
A
90%
t =2µs
V
R
I =0.1 · I
rr
R
I =10mA
p
F
t =0.35ns
r
δ=0.05
V =6V
R
R =100Ω
L
Pulse Generator
PG-10N
s
W.F.Analyzer
SAS-8130
R =50Ω
i
R =50Ω
Switching Diodes
MA200WK
IF – VF
VF – Ta
IR – VR
102
10
103
1.2
1.0
0.8
0.6
0.4
0.2
0
Ta=150˚C
100˚C
102
10
Ta=150˚C
IF=10mA
1
100˚C
10m
1
10–1
10–2
10–3
25˚C
–20˚C
10–1
10–2
0–3
25˚C
0
20
40
60
80
100 120
0
0.2
0.4
0.6
0.8
1.0
1.2
–
0
40
80
120
(
V
)
Reverse voltage VR
(
V
)
(
)
Forward voltage VF
Aient tperature Ta ˚C
IR – Ta
Ct – VR
102
10
6
5
2
1
0
Ta=25˚C
V0V
5V
6V
1
10–1
10–2
10–3
–40
0
40
160 200
0
20
40
60
80
100 120
(
)
Ambient temperaa ˚C
(
V
)
Reverse oltage VR
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
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