MA2JF210G [PANASONIC]
Rectifier Diode, 1 Element, 0.3A, 200V V(RRM), Silicon, ROHS COMPLIANT, SMINI2-F3, 2 PIN;型号: | MA2JF210G |
厂家: | PANASONIC |
描述: | Rectifier Diode, 1 Element, 0.3A, 200V V(RRM), Silicon, ROHS COMPLIANT, SMINI2-F3, 2 PIN 光电二极管 |
文件: | 总3页 (文件大小:322K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Fast Recovery Diodes (FRD)
MA2JF210G
Silicon epitaxial planar type
For bias winding rectification
Features
Voltage rectification in bias winding
Package
ꢀCode
Absolute Maximum Ratings T = 25°C
SMini2-F3
ꢀPin Name
1:node
a
Parameter
Symbol
Rating
200
Unit
V
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
VRRM
VRSM
IF(AV)
IFSM
T
de
200
V
1
Forward current (Average) *
0.3
A
Marking Symbol: 1N
2
Non-repetitive peak forward surge current *
3
A
Junction temperature
Storage temperature
°C
°C
ꢀInternal Connection
1
T
–40 to +150
Note) 1: Ambient temperature: T = 90°Cave on,
*
a
mounted on an alumina C boa
2: 50 Hz sine wave 1 cycle (Nn-repeitive eak current)
*
2
Electrical Charaterisics T = 25°C±
a
Para
Forward votage
Symbo
V
Conditions
Min
Typ
Max
1.25
1.0
Unit
V
IF = 300 mA
Reerse curret
IRRM
Ct
VRRM = 200 V
mA
pF
Terminacapacitan
Reverse recover
VR = 0 V, f = 1 MHz
2
trr
IF = 0.1A, IR = 0.2A, Irr = 0.05A
Mounted on an alumina PC board
400
160
ns
Thermal resistance (c
Rth(j-a)
°C/W
Note) 1. Measuring methodare based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 20 MHz
3. This product is sensitive to electric shock (static electricity, etc.). Due attenion must be paid on the charge of a human body and the leakage
of current from the operating equipment.
4. 1: trr measurement circuit
*
50 Ω
50 Ω
trr
D.U.T.
IF
0.25 × IR
5.5 Ω
IR
2: Mounted on an alumina PC board (Board: 20 mm × 50 mm, Soldering land: 2 mm × 2 mm)
*
Publication date: August 2009
SKJ00026BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2JF210G
SMini2-F3
Unit: mm
1.25 ±0.10
0.50 ±0.05
0.13 −0..0025
2
0 to 0.05
1
0.05
5°
2
SKJ00026BED
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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(5) When designing your equipment, comply with he ange f absolute maximing nd the guaranteed operating conditions
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maximum rating on the transient state, such as powpower-off and modeswitching. Otherwise, we will not be liable for any
defect which may arise later in your equpmen
Even when the products are used withthe guaanteed values, kinto he cosideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the sytems such as redundant design, arresting the spread of fire
or preventing glitch are recommin ordto prevent physicinjury, fre, social damaes, for example, by using the products.
(6) Comply with the instructios for se in rder to prevent breakdwn and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanicastress) at the time of andlig, mounting or at customer's process. When using products for which
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2008080
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