MA2X073 [PANASONIC]
Silicon epitaxial planar type; 硅外延平面型
| 型号： | MA2X073 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Band Switching Diodes
MA2X073
Silicon epitaxial planar type
Unit : mm
INDICATES
CATHODE
For band switching
1
2
I Features
•
•
•
Low forward dynamic resistance rf
2.7 −+ 00..12
Less voltage dependence of diode capacitance CD
Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
3.3 0.2
*(3. 8 0.2)
5°
5°
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VR
Rating
35
Unit
V
Reverse voltage (DC)
Forward current (DC)
Operating ambient temperature*
Storage temperature
IF
100
mA
°C
*( ): WL type
1 : Anode
2 : Cathode
Mini Type Package (2-pin)
Topr
Tstg
−25 to +85
−55 to +150
°C
Note)
* : Maximum ambient temperature during operation
Marking Symbol: 4B
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Symbol
Conditions
Min
Typ
Max
100
1
Unit
nA
V
IR
VF
CD
rf
VR = 33 V
IF = 100 mA
0.01
0.92
0.9
VR = 6 V, f = 1 MHz
1.2
0.85
pF
Ω
Forward dynamic resistance*
IF = 2 mA, f = 100 MHz
0.65
Note) 1．Rated input/output frequency: 100 MHz
2. * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
ꢀ
1
MA2X073
Band Switching Diodes
IF VF
IR Ta
CD VR
2
3
10
10
5
10
VR = 33 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
2
10
10
3
2
1
1
10
1
0.5
−1
10
0.3
0.2
−2
−1
10
0.1
10
0
20 40 60 80 100 120 140 160
0
4
8
12 16 20 24 28 32 36 40
0
0.2
0.4
0.6
0.8
1.0
( )
Ambient temperature Ta °C
( )
V
(
)
V
Reverse voltage VR
Forward voltage VF
rf IF
rf f
1.0
0.8
0.6
0.4
0.2
0
1.0
0.8
0.6
0.4
0.2
0
f = 100 MHz
Ta = 25°C
IF = 2 mA
Ta = 25°C
1
3
10
30
100
10
30
100
300
1 000
(
)
Forward current IF mA
(
)
MHz
Frequency
f
2
相关型号：
MA2YD1500L
Rectifier Diode, Schottky, 1 Element, 1A, 25V V(RRM), Silicon, ROHS COMPLIANT, MINI2-F1, 2 PIN
PANASONIC
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