MA3J142A [PANASONIC]

Silicon epitaxial planar type; 硅外延平面型
MA3J142A
型号: MA3J142A
厂家: PANASONIC    PANASONIC
描述:

Silicon epitaxial planar type
硅外延平面型

整流二极管 光电二极管
文件: 总2页 (文件大小:50K)
中文:  中文翻译
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Switching Diodes  
MA3J142A  
Silicon epitaxial planar type  
Unit : mm  
For switching circuits  
2.1 ± ±0.1  
0.425  
1.25 ± ±0.1  
0.425  
I Features  
1
2
Small S-mini type package allowing high density mounting  
3
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Forward current (DC)  
Peak forward current  
Symbol  
VR  
Rating  
80  
Unit  
V
VRM  
IF  
80  
V
100  
225  
500  
mA  
mA  
mA  
IFM  
1 : Cathode  
2 : NC  
3 : Anode  
EIAJ : SC-70  
Non-repetitive peak forward  
surge current*  
IFSM  
Flat S-Mini Type Package (3-pin)  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Marking Symbol: MB  
Internal Connection  
Note)  
* : t = 1 s  
1
2
3
I Electrical Characteristics Ta = 25°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Reverse voltage (DC)  
Terminal capacitance  
Reverse recovery time*  
Symbol  
IR  
Conditions  
Min  
80  
Typ  
Max  
100  
1.2  
Unit  
nA  
V
VR = 75 V  
VF  
IF = 100 mA  
IR = 100 µA  
VR  
V
Ct  
VR = 0 V, f = 1 MHz  
15  
10  
pF  
ns  
trr  
IF = 10 mA, VR = 6 V  
Irr = 0.1 · IR, RL = 100 Ω  
Note) 1. Rated input/output frequency: 100 MHz  
2. * : trr measuring circuit  
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 0.1 · IR  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
VR = 6 V  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
W.F.Analyzer  
(SAS-8130)  
Ri = 50 Ω  
1
MA3J142A  
Switching Diodes  
IF VF  
VF Ta  
IR VR  
3
4
3
2
10  
10  
10  
10  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Ta = 150°C  
2
10  
100°C  
10  
1
IF = 100 mA  
25°C  
Ta±=±150°C  
100°C  
10  
10 mA  
3 mA  
25°C  
1  
2  
−±20°C  
10  
10  
1
1  
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
20  
40  
60  
80  
100 120  
40  
0
40  
80  
120 160 200  
(
)
( )  
Reverse voltage VR V  
Forward voltage VF  
V
(
)
Ambient temperature Ta °C  
IR Ta  
Ct VR  
IF(surge) tW  
4
10  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0
1 000  
Ta±=±25°C  
f = 1 MHz  
Ta = 25°C  
VR = 75 V  
I
F(surge)  
35 V  
300  
100  
t
3
2
W
10  
10  
Non repetitive  
6 V  
30  
10  
10  
3
1
1
0.3  
0.1  
1  
40  
10  
0
40  
80  
120 160 200  
0
20  
40  
60  
80  
100 120  
0.03 0.1 0.3  
)
Pulse width tW ms  
1
3
10  
30  
(
)
Ambient temperature Ta °C  
(
)
V
(
Reverse voltage VR  
2

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