MA3V177 [PANASONIC]
Silicon epitaxial planar type; 硅外延平面型
| 型号： | MA3V177 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Switching Diodes
MA3V177
Silicon epitaxial planar type
Unit : mm
4.0 0.2
For switching circuits
I Features
•
•
Small terminal capacitance, Ct
Can be connected in series
I Absolute Maximum Ratings Ta = 25°C
marking
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
Symbol
VR
Rating
Unit
V
1
2
3
40
40
VRM
IF
V
1.27 1.27
100
mA
mA
°C
1 : Anode
2 : Cathode
Anode
2.54 0.15
IFM
200
Tj
150
3 : Cathode
New S-Type Package
Tstg
−55 to +150
°C
Internal Connection
1
2
3
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Symbol
IR
Conditions
Min
40
Typ
Max
0.1
Unit
µA
V
VR = 40 V
VF
IF = 100 mA
1.2
VR
IR = 100 µA
V
*1
Ct1
VR = 0 V, f = 1 MHz
5.5
3.0
pF
2
*
Ct2
Note) 1. Rated input/output frequency: 100 MHz
1
2. * : Between pins 3 and 2
2
*
: Between pins 2 and 1
1
MA3V177
Switching Diodes
IF VF
IR VR
IF VF
3
3
2
2
10
10
10
10
Ta = 25°C
Ta = 25°C
Ta = 25°C
2
10
10
10
10
1
1
2 3
1
2 3
1
2 3
−1
1
1
10
D1 (3-2)
D2 (2-1)
40
−1
−1
−2
10
10
10
0
0.4
0.8
1.2
1.6
2.0
0
0.4
0.8
1.2
1.6
2.0
0
10
20
30
50
(
)
Forward voltage VF
V
( )
Forward voltage VF V
( )
Reverse voltage VR V
IR VR
VF Ta
VF Ta
3
1.2
1.0
0.8
0.6
0.4
0.2
0
10
10
1.2
1.0
0.8
0.6
0.4
0.2
0
Ta = 125°C
D1 (3-2)
2
D2 (2-1)
IF = 10 mA
IF = 10 mA
3 mA
1 mA
10
3 mA
1 mA
0.1 mA
1
2 3
0.1 mA
1
1
2 3
1
2 3
−1
10
−40
0
40
80
120 160
0
10
20
30
40
50
−40
0
40
80
120 160
( )
Ambient temperature Ta °C
(
)
V
Reverse voltage VR
(
)
Ambient temperature Ta °C
IR Ta
Ct VR
10
5
100
10
1
f = 1 MHz
Ta = 25°C
D2 (2-1)
3
2
(
)
D1 3-2
1
(
)
D2 2-1
D1 (3-2)
1
2 3
0.5
0.3
0.2
1
2
3
0.1
0.1
0
4
8 12 16 20 24 28 32 36 40
0
20 40 60 80 100 120 140 160
( )
V
(
)
Reverse voltage VR
Ambient temperature Ta °C
2
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