MA6Z121 [PANASONIC]
Silicon epitaxial planar type; 硅外延平面型
| 型号： | MA6Z121 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type |
| 文件： | 总3页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Switching Diodes
MA6Z121 (MA6S121)
Silicon epitaxial planar type
Unit : mm
For switching circuit
2.0 0.1
0.7 0.1
(0.65)(0.65)
6
5
4
I Features
•
•
Small S-mini type 6-pin package
Three isolated elements contained in one package, allowing high-
density mounting
1
2
3
+0.10
0.2 0.05
0.16
–0.06
•
Flat lead type, resulting in improved mounting efficiency and
solderability with the high-speed mounting machine
Short reverse recovery time trr
5°
•
•
Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Average forward current*
Symbol
VR
Rating
80
Unit
V
1 : Anode 1
2 : Anode 2
3 : Anode 3
4 : Cathode 3
5 : Cathode 2
6 : Cathode 1
VRM
IF(AV)
IFM
80
V
SMini6-F1 Package
1
100
225
500
mA
mA
mA
1
Marking Symbol: M2D
Internal Connection
Peak forward current*
Non-repetitive peak forward
IFSM
1,2
surge current*
Junction temperature
Storage temperature
Tj
150
°C
°C
1
2
3
6
5
4
Tstg
−55 to +150
1
2
Note)
*
*
: Value for single diode
: t = 1 s
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
Symbol
IR
Conditions
Min
80
Typ
Max
0.1
Unit
µA
V
VR = 75 V
VF
IF = 100 mA
IR = 100 µA
1.2
VR
V
Ct
VR = 0 V, f = 1 MHz
2
3
pF
ns
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
A
90%
VR
Irr = 0.1 · IR
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
105
MA6Z121
Switching Diodes
IF VF
IR VR
VF Ta
3
5
4
3
2
10
10
10
10
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Ta = 150°C
100°C
2
10
Ta = 150°C
100°C
25°C
10
IF = 100 mA
− 20°C
1
10 mA
3 mA
25°C
−1
10
10
1
−2
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100 120
−40
0
40
80
120 160 200
( )
V
Forward voltage VF
( )
V
(
)
Reverse voltage VR
Ambient temperature Ta °C
IR Ta
Ct VR
IF(surge) tW
5
10
1 000
1.2
1.0
0.8
0.6
0.4
0.2
0
Ta = 25°C
f = 1 MHz
Ta = 25°C
IF(surge)
300
100
VR = 75 V
35 V
6 V
tW
Non repetitive
4
3
2
10
10
10
30
10
3
1
10
1
0.3
0.1
−40
0
40
80
120 160 200
0
20
40
60
80
100 120
0.1 0.3
1
3
10
30
(
)
Ambient temperature Ta °C
( )
V
( )
Pulse width tW ms
Reverse voltage VR
106
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2001 MAR
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