MA7D69 [PANASONIC]
Mixer Diode, Very High Frequency, Silicon, TO-220AB, TO-220D, 3 PIN;
| 型号： | MA7D69 |
| 厂家： | 
PANASONIC |
| 描述： | Mixer Diode, Very High Frequency, Silicon, TO-220AB, TO-220D, 3 PIN 局域网 二极管 |
| 文件： | 总3页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA7D69
Silicon epitaxial planer type (cathode common)
Unit : mm
For switching power supply
4.6±0.2
9.9±0.3
2.9±0.2
■ Features
●
●
●
●
Low forward voltage VF
ø3.2±0.1
High reverse voltage VRRM : 150V type
TO-220D (full-pack package) with high dielectric strength > 5.0
Lead end to be V cut for easy mounting
1.4±0.2
2.6±0.1
1.6±0.2
0.8±0.1
0.55±0.15
2.54±03
3
5.08±0.5
1
2
■ Absolute Maximum Ratings (Ta= 25˚
1 : Anode
2 : Cathode
3 : Anode
Parameter
Symb
M
F(AV)
Rating
150
Unt
V
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward surge current
Junction temperature
TO-220D Package
1
A
IFSM*
80
A
■ Internal Connection
Tj
– 40 to +125
– 2to + 70
˚C
˚C
Operating ambient temperture
Tstg
* Sine half wave : 10ms/ycle
1
2
3
■ Electrical Characteristics (Ta= 25˚C)
Pa
Reverse current (
Forward voltage (DC
Thermal resistance
Symbol
Condition
min
typ
max
3
Unit
mA
IR
VR=150V, TC= 25˚C
F
IF= 5V, TC= 25˚C
0.85
3
V
Rth(j-c)
Flat direct current between junction and case
˚C/W
❖ Rated input/output frequency : 50MHz
Schottky Barrier Diodes (SBD)
MA7D69
IF – VF
VF – Ta
IR – VR
104
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
105
104
103
102
10
75˚C 25˚C
Ta=125˚C
Ta=125˚C
–20˚C
103
102
10
IF=5A
75˚C
25˚C
1A
1
10–1
1
–40
0
40
80
120 160
0
40
80
120 160 200 240
0
0.2
0.4
0.6
0.8
1.0
1.2
(
)
( )
Reverse voltage VR V
(
V
)
Aent teperature Ta ˚C
Forward voltage VF
IR – Ta
Ct – VR
PD(AV) – IF(AV)
105
104
103
102
10
800
700
600
300
200
100
0
16
14
12
10
8
f=1MHz
Ta=25˚C
VR=150V
t0
t1
50V
10V
/t1=1/6
1/3
1/2
DC
6
4
2
1
–40
0
0
40
160 200
0
40
80
120 160 200 240
0
2
4
6
8
10
12
(
)
(
V
)
( )
Average forward current IF(AV) A
Ambient temperaa ˚C
Reverse voltage VR
IF(AV) – TC
16
14
12
10
8
t0
t1
t0/t1=1/2
1/3
DC
1/6
6
4
2
0
20
40
60
80
100 120 140
(
)
Case temperature TC ˚C
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
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provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
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