MTM131270BBF [PANASONIC]
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN;
| 型号： | MTM131270BBF |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：586K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Doc No. TT4-EA-13636
Revision. 4
MOS FET
MTM131270BBF
MTM131270BBF
Silicon P-channel MOS FET
Unit : mm
2.9
For switching
0.4
0.16
3
Features
Low Drain-source On-state Resistance : RDS(on) typ = 92 m (VGS = -4.0 V)
Low drive voltage: 1.8 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
1
2
1.1
Marking Symbol :
Packaging
EU
(0.95)(0.95)
1.9
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25 C
項目
Drain-source Voltage
Panasonic
JEITA
Mini3-G3-B
SC-59A
TO-236AA/SOT-23
記号
VDS
VGS
ID
IDp
PD
Tch
Topr
Tstg
定格
-20
10
-2
-8
単位
Code
V
Gate-source Voltage
Drain current
A
A
mW
°C
°C
°C
*1
Internal Connection
Peak drain current
Power dissipation *2
700
150
-40 to + 85
-55 to +150
(D)
3
Channel temperature
Operating ambient temperature
Storage Temperature Range
Note *1 Pulse width ≦10 μs, Duty cycle ≦1 %
*2
Measuring on ceramic board at 40 38 0.1 mm.
Absolute maximum rating PD without heat sink shall be made 200 mW.
1
2
(G)
(S)
Pin Name
1. Gate
2. Source
3. Drain
Page 1 of 6
Established : 2011-07-19
Revised : 2014-02-03
Doc No. TT4-EA-13636
Revision. 4
MOS FET
MTM131270BBF
Electrical Characteristics Ta = 25 C 3 C
項目
記号
条件
最小 標準 最大 単位
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
VDSS ID = -1 mA, VGS = 0 V
-20
V
A
V
IDSS
IGSS
Vth
RDS(on)1
RDS(on)2
RDS(on)3
|Yfs|
VDS = -20 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
ID = -1 mA, VDS = -10 V
ID = -1 A, VGS = -4 V
-1
10
-0.4 -0.75 -1.1
92 130
115 210
161 280
*1
ID = -1 A, VGS = -2.5 V
ID = -0.5 A, VGS = -1.8 V
ID = -1 A, VDS = -10 V, f = 1 kHz
m
S
Drain-source ON resistance
*1
3
Forward transfer admittance
Short-circuit input capacitance (Common source)
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
300
30
35
6
8
57
55
VDS = -10 V, VGS = 0 V
f = 1 MHz
pF
Turn-on Delay Time *2
VDD = -10 V, VGS = 0 to -4 V
ID = -1 A
VDD = -10 V, VGS = -4 to 0 V
ID = -1 A
Rise Time *2
ns
Turn-off Delay Time *2
Fall Time *2
Note： 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Pulse test
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Page 2 of 6
Established : 2011-07-19
Revised
: 2014-02-03
Doc No. TT4-EA-13636
Revision. 4
MOS FET
MTM131270BBF
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
VDD = -10 V
ID = -1 A
RL = 10
0 V
PW = 10 s
D.C. 1 %
-4 V
10 %
90 %
90 %
10 %
Page 3 of 6
Established : 2011-07-19
Revised
: 2014-02-03
Doc No. TT4-EA-13636
Revision. 4
MOS FET
MTM131270BBF
Technical Data ( reference )
ID - VDS
ID - VGS
-0.05
-0.04
-0.03
-0.02
-2
-1.5
-1
VGS = -4.0 V
-2.5 V
-1.8 V
Ta = 85 ℃
25 ℃
-1.5 V
-0.5
0
-0.01
-40 ℃
-1.0 V
0
0
-0.2
-0.4
-0.6
-0.8
-1
0
-0.2
-0.4
-0.6
Gate-source voltage VGS (V)
Drain-source voltage VDS (V)
VDS - VGS
RDS(on) - ID
-1
1000
100
10
-0.8
-1.8 V
-2.5 V
ID = -2 A
-1 A
-0.6
-0.4
-0.2
0
VGS = -4 V
-0.5 A
0
-1
-2
-3
-4
-5
-0.1
-1
Drain Current ID (A)
Gate-source Voltage VGS (V)
Capacitance - VDS
Dynamic Input/Output Characteristics
1000
100
10
-10
-8
-6
-4
-2
0
VDD = -10 V
Ciss
Coss
Crss
0
2
4
6
8
10
-0.1
-1
-10
-100
Total Gate Charge Qg (nC)
Drain-source voltage VDS (V)
Page 4 of 6
Established : 2011-07-19
Revised : 2014-02-03
Doc No. TT4-EA-13636
Revision. 4
MOS FET
MTM131270BBF
Technical Data ( reference )
Vth - Ta
RDS(on) - Ta
200
150
100
50
-1
-0.8
-0.6
-0.4
-0.2
0
VGS = -1.8 V
-2.5 V
-4.0 V
0
-50
0
50
100
150
-50
0
50
100
150
Temperature (℃)
Temperature (℃)
PD - Ta
PD - Tc
1
0.8
0.6
0.4
0.2
0
Mounted on ceramic board
(40 38 0.1 mm)
Non-heat sink
0
50
100
150
Temperature Ta (C)
Rth - tsw
Safe Operating Area
-100
1000
100
10
IDp = -8 A
-10
-1
1 ms
10 ms
-0.1
Operation in this area
is limited by RDS(on)
100 ms
1 s
Ta = 25 °C,
DC
-0.01
Glass epoxy board (25.4 25.4 0.8 mm)
coated with copper foil,
which has more than 300 mm2.
-0.001
0.1
1
10
100
1000
-0.01
-0.1
-1
-10
-100
Drain-source voltage VDS (V)
Pulse Width tsw (s)
Page 5 of 6
Established : 2011-07-19
Revised : 2014-02-03
Doc No. TT4-EA-13636
Revision. 4
MOS FET
MTM131270BBF
Mini3-G3-B
Unit: mm
2.90+-0.0205
0.40+-0.0105
0.16+-0.0106
3
1
2
(0.95) (0.95)
1.9±0.1
(10°)
Land Pattern (Reference) (Unit : mm)
1.0
1.9
Page 6 of 6
Established : 2011-07-19
Revised : 2014-02-03
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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20100202
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