NP04601 [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN;
| 型号： | NP04601 |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：599K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
For general amplification
0.12+0.03
0.02
6
5
4
Features
0 to 0.02
Two elements incorporated into one package (Each transistor is separated)
SSSMini type package, reduction of the mounting area and assembly cost
Maximum package height (0.4 mm) contributes to develop thinner equipments
1
2
3
(0.35) (0.35)
1.00±0.05
Display at No.1 lead
Basic Part Number
2SD0601A+ 2SB0709A
Absolute Maximum Ratings T= 25C
Parameter
Symbol
Rating
Unit
1: Emitter (Tr1)
4: Emitter (Tr2)
5: Base (Tr2)
Collector-base voltage
(Emitter open)
VCBO
60
V
2: Base (Tr1)
3: Collector (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Collector-emitter voltage
(Base open)
VCEO
50
7
V
V
Marking Symbol: 5C
Tr1
Emitter-base voltage
(Collector open)
VEBO
Internal Connection
(C1) (B2) (E2)
Collector current
IC
100
200
mA
mA
6
5
4
Peak collector current
ICP
Collector-base voltage
(Emitter open)
Tr2
Tr1
VCBO
VCEO
VEBO
V
V
V
60
50
7
Collector-emitter voltage
(Base open)
1
2
3
(E1) (B1) (C2)
Tr2
Emitter-base voltage
(Collector open)
Collector current
IC
ICP
PT
Tj
mA
mA
mW
C
100
200
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
125
125
Overall
T
stg
–55 to +125
C
Note) : Measuring on substrate at 17 mm 10 mm 1 mm
Publication date: November 2005
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NP04601
Electrical Characteristics T= 25C±3C
Tr1
Parameter
Symbol
Conditions
Min
60
50
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
VCBO I= 10 µA, I= 0
VCEO IC = 2 mA, IB = 0
VEBO I= 10 µA, I= 0
V
V
ICBO
ICEO
hFE
VCB = 20 V, I= 0
VCE = 10 V, IB = 0
VCE = 10 V, I= 2 mA
0.1
100
390
0.3
µA
µA
V
180
Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
Collector output capacitance
Cob
fT
VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
(Common base, input open circuited)
Transition frequency
VCB = 10 V, I2 mA, f = 200 MHz
150
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Pulse measurement
Tr2
Parameter
Symbol
Conditions
Min
60
50
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
VCBO I10 µA, I= 0
VCEO I2 mA, IB = 0
VEBO I10 µA, IC = 0
V
V
ICBO
ICEO
hFE
VCB 20 V, I= 0
V10 V, IB = 0
V10 V, IC 2 mA
0.1
100
390
µA
µA
V
180
Collector-emitter saturation voltage
VCE(sat) I100 mA, IB 10 mA
0.3
2.7
0.5
Collector output capacitance
Cob
VCB 10 V, IE = 0, f = 1 MHz
pF
(Common base, input open circuited)
Transition frequency
fT
VCB 10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Pulse measurement
2
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NP04601
Common characteristics chart
PT T
a
120
80
40
0
0
40
80
120
Ambient temperature Ta (°C)
Characteristics charts of Tr1
IC V
IC V
VCE(sat) IC
60
40
100
1
VCE = 10 V
IC /IB = 10
Ta = 25°C
IB = 160 µA
140 µA
80
Ta = 85°C
60
120 µA
100 µA
25°C
10−1
40
20
0
80 µA
60 µA
40 µA
20 µA
−25°C
Ta = 85°C
−25°C
20
0
25°C
10−2
10−1
0
0.4
0.8
1.2
1
10
102
0
4
8
12
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
Collector current IC (mA)
hFE I
Cob VCB
102
10
1
400
300
200
100
0
f = 1 MHz
Ta = 25°C
V
CE = 10 V
Ta = 85°C
25°C
−25°C
102
0
10
20
30
40
1
10
103
Collector-base voltage VCB (V)
Collector current IC (mA)
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NP04601
Characteristics charts of Tr2
IC V
IC V
VCE(sat) IC
−80
−1
−100
VCE = −10 V
IB = −300 µA
−250 µA
Ta = 25°C
IC /IB = 10
−80
−60
−40
−20
0
−200 µA
Ta = 85°C
−60
−150 µA
−100 µA
25°C
−10−1
Ta = 85°C
−40
−20
0
−25°C
25°C
−25°C
−50 µA
−10−2
−10−1
−1
−10
−102
0
−4
−8
−12
0
− 0.4
− 0.8
−1.2
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Base-emitter voltage VBE (V)
hFE I
Cob VCB
10
400
300
200
f = 1 MHz
Ta = 25°C
V
CE = −10 V
Ta = 85°C
25°C
−25°C
100
0
1
−102
−103
0
−10
−20
−30
−40
−1
−10
Collector-base voltage VCB (V)
Collector current IC (mA)
4
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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