ON1003 [PANASONIC]
Photo Interrupter; 光遮断器
| 型号： | ON1003 |
| 厂家： | 
PANASONIC |
| 描述： | Photo Interrupter |
| 文件： | 总3页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transmissive Photosensors (Photo Interrupters)
ON1003
Photo Interrupter
Unit : mm
A
Slit width
(0.3)
For contactless SW, object detection
A'
4.2
Outline
SEC. A-A'
4.2
ON1003 is an ultraminiature, highly reliable transmittive
photosensor in which a high efficiency GaAs infrared light emitting
diode chip and a high sensitivity Si phototransistor chip are integrated
in a double molded resin package.
1.5 1.2 1.5
(C0.5)
Device
center
Gate the rest
0.3 max.
(C0.3)
+0.1
ø1.5
–0
2-0.25
*3.2
2-0.5
Features
*2.54
Ultraminiature : 4.2 × 4.2 mm (height : 5.2 mm)
2
4
3
Fast response : tr, tf = 35 µs (typ.)
Highly precise position detection : 0.15 mm
Gap width : 1.2 mm
1
2
3
4
1
Pin connection
(Note)
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
4. Burrs should be less than 0.15mm
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
*1 Input power derating ratio is
1.0mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
VR
6
V
mA
mW
mA
V
Input (Light
IF
50
75
20
35
6
emitting diode)
1.0mW/˚C at Ta ≥ 25˚C.
*3 Soldering time is within 5 seconds.
*1
PD
IC
Collector to emitter voltage VCEO
Emitter to collector voltage VECO
Output (Photo
transistor)
V
*2
Collector power dissipation PC
75
mW
more than 1mm
Operating ambient temperature
Topr –25 to +85 ˚C
Temperature Storage temperature
Soldering temperature
Tstg – 40 to +100 ˚C
Soldering bath
*3
Tsol
260
˚C
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Forward voltage (DC)
Reverse current (DC)
VF IF = 20mA
IR VR = 3V
1.2
1.4
10
V
Input
characteristics
µA
nA
µA
V
Output characteristics Collector cutoff current
ICEO VCE = 20V
100
1300
0.4
Collector current
IC VCE = 5V, IF = 5mA
100
Transfer
characteristics
Collector to emitter saturation voltage VCE(sat) IF = 10mA, IC = 50µA
Response time
tr , tf* VCC = 5V, IC = 0.1mA, RL = 1000Ω
35
µs
* Switching time measurement circuit
Sig.IN
VCC
td : Delay time
(Input pulse)
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
90%
10%
Sig.OUT
(Output pulse)
td
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
50Ω
RL
tr
tf
1
Transmissive Photosensors (Photo Interrupters)
ON1003
IF , IC — Ta
IF — VF
VF — Ta
60
50
40
30
20
10
0
60
50
40
30
20
10
0
1.6
1.2
0.8
0.4
0
Ta = 25˚C
IF
IF = 50mA
10mA
1mA
IC
– 25
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
2.4
– 40 – 20
0
20
40
60
80 100
Ambient temperature Ta (˚C )
Forward voltage VF (V)
Ambient temperature Ta (˚C )
IC — IF
IC — VCE
IC — Ta
5
4
3
2
1
0
3
2
1
0
120
100
80
60
40
20
0
VCE = 5V
Ta = 25˚C
Ta = 25˚C
V
CE = 5V
IF = 5mA
IF = 20mA
15mA
10mA
5mA
2mA
0
5
10
15
20
25
0
1
2
3
4
5
6
– 40 – 20
0
20
40
60
80 100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (˚C )
ICEO — Ta
tr — IC
tf — IC
1
10 3
10 2
10 3
10 2
VCC = 5V
Ta = 25˚C
VCC = 5V
Ta = 25˚C
VCE = 20V
10 –1
10 –2
10 –3
10 –4
10 –5
RL = 2kΩ
1kΩ
RL = 2kΩ
1kΩ
10
1
10
1
100Ω
100Ω
Sig.IN VCC
Sig.IN VCC
90%
10%
90%
10%
Sig.
OUT
50Ω
Sig.
Sig.
OUT
50Ω
Sig.
OUT
OUT
td
td
RL
RL
tr
1
tf
tr
1
tf
10 –1
10 –1
– 40 – 20
0
20
40
60
80 100
10 –2
10 –1
10
10 –2
10 –1
10
Ambient temperature Ta (˚C )
Collector current IC (mA)
Collector current IC (mA)
2
Transmissive Photosensors (Photo Interrupters)
ON1003
IC — d (1)
IC — d (2)
100
80
60
40
20
0
100
80
60
40
20
0
VCE = 5V
Ta = 25˚C
IF = 5mA
VCE = 5V
Ta = 25˚C
IF = 5mA
Criterion
Criterion
0
0
d
d
0
1
2
3
4
0
0.5
1.0
1.5
2.0
2.5
Distance d (mm)
Distance d (mm)
3
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