ON1109 [PANASONIC]

Photo Interrupter; 光遮断器
ON1109
型号: ON1109
厂家: PANASONIC    PANASONIC
描述:

Photo Interrupter
光遮断器

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Transmissive Photosensors (Photo Interrupters)  
ON1109  
Photo Interrupter  
Unit : mm  
Mark for indicating  
LED side ø1.5  
For contactless SW, object detection  
2-C2.0±0.3  
Outline  
28.0±0.35  
17.0±0.3  
5.0±0.2  
A
Device  
center  
ON1109 is a photocoupler in which a high efficiency GaAs  
infrared light emitting diode is used as the light emitting element,  
and a high sensitivity phototransistor is used as the light detecting  
element. The two elements are arranged so as to face each other,  
and objects passing between them are detected.  
1.0±0.2  
2-0.45±0.2  
A'  
(2.54)  
SEC. A-A'  
(12.0)  
Features  
Highly precise position detection : 0.7 mm  
22.4±0.2  
2
3
2-ø3.2±0.2  
Fast response : tr, tf = 6 µs (typ.)  
2
3
4
1
4
Small output current variation against change in temperature  
Deep and wide gap between emitting and detecting elements  
1
Pin connection  
(Note) ( ) Dimension is reference  
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Symbol Ratings Unit  
Reverse voltage (DC)  
Forward current (DC)  
Power dissipation  
Collector current  
VR  
IF  
3
50  
75  
20  
30  
5
V
mA  
mW  
mA  
V
Input (Light  
emitting diode)  
*1  
PD  
IC  
Collector to emitter voltage VCEO  
Emitter to collector voltage VECO  
Output (Photo  
transistor)  
V
*1 Input power derating ratio is  
*2  
Collector power dissipation PC  
100  
mW  
1.0 mW/˚C at Ta 25˚C.  
Operating ambient temperature  
Storage temperature  
Topr –25 to +85 ˚C  
Tstg –30 to +100 ˚C  
*2 Output power derating ratio is  
Temperature  
1.34 mW/˚C at Ta 25˚C.  
Electrical Characteristics (Ta = 25˚C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max Unit  
Forward voltage (DC)  
Reverse current (DC)  
Collector cutoff current  
Collector to emitter capacitance  
Collector current  
VF IF = 50mA  
1.2  
1.5  
10  
V
Input  
characteristics  
IR VR = 3V  
µA  
nA  
pF  
mA  
µs  
ICEO VCE = 10V  
200  
Output  
characteristics  
CC VCE = 10V, f = 1MHz  
IC VCE = 10V, IF = 20mA  
tr , tf* VCC = 10V, IC = 1mA, RL = 100  
5
6
0.3  
Transfer  
Response time  
characteristics  
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA  
0.3  
V
* Switching time measurement circuit  
Sig.IN  
VCC  
td : Delay time  
(Input pulse)  
tr : Rise time (Time required for the collector current to increase  
from 10% to 90% of its final value)  
90%  
10%  
Sig.OUT  
(Output pulse)  
td  
tf : Fall time (Time required for the collector current to decrease  
from 90% to 10% of its initial value)  
50  
RL  
tr  
tf  
1
Transmissive Photosensors (Photo Interrupters)  
ON1109  
IF , IC — Ta  
IF — VF  
IC — IF  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
10 2  
10  
VCE = 10V  
Ta = 25˚C  
Ta = 25˚C  
IF  
1
IC  
10 –1  
10 –2  
10 –1  
– 25  
0
20  
40  
60  
80  
100  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
1
10  
10 2  
Ambient temperature Ta (˚C )  
Forward voltage VF (V)  
Forward current IF (mA)  
VF — Ta  
IC — VCE  
IC — Ta  
1.6  
1.2  
0.8  
0.4  
0
10 2  
10  
160  
120  
80  
40  
0
V
CE = 10V  
Ta = 25˚C  
IF = 20mA  
IF = 50mA  
10mA  
IF = 30mA  
20mA  
10mA  
1
10 –1  
10 –2  
10 –1  
– 40 – 20  
0
20  
40  
60  
80 100  
1
10  
10 2  
– 40 – 20  
0
20  
40  
60  
80 100  
Ambient temperature Ta (˚C )  
Collector to emitter voltage VCE (V)  
Ambient temperature Ta (˚C )  
ICEO — Ta  
tr — IC  
IC — d  
10  
1
10 3  
10 2  
100  
80  
60  
40  
20  
0
VCC = 10V  
Ta = 25˚C  
VCE = 10V  
Ta = 25˚C  
IF = 20mA  
Criterion  
0
d
10 –1  
10 –2  
10 –3  
10 –4  
RL = 1k  
500Ω  
10  
1
100Ω  
VCE = 24V  
10V  
Sig.IN  
VCC  
Sig.  
V1  
V2  
90%  
10%  
OUT  
V1  
50Ω  
V2  
td  
RL  
tr  
1
tf  
10 –1  
– 40 – 20  
0
20  
40  
60  
80 100  
10 –2  
10 –1  
10  
0
1
2
3
4
5
6
Ambient temperature Ta (˚C )  
Collector current IC (mA)  
Distance d (mm)  
2

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