ON2170 [PANASONIC]
Reflective Photosensor; 反射型光电传感器
| 型号： | ON2170 |
| 厂家： | 
PANASONIC |
| 描述： | Reflective Photosensor |
| 文件： | 总2页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Reflective Photosensors (Photo Reflectors)
CNB1302
Reflective Photosensor
Unit : mm
Overview
Mark for indicating
anode side
C0.5
CNB1302 is a small, thin reflective photosensor consisting of a
high efficiency GaAs infrared light emitting diode which is integrated
with a high sensitivity Si phototransistor in a single resin package.
1
3
Chip
center
Features
Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm)
Visible light cutoff resin is used
Fast response : tr, tf = 20µs (typ.)
Easy interface for control circuit
4-0.7
4-0.5
±0.1
0.5
2
4
1.8
0.15
Applications
3.4±0.3
Control of motor and other rotary units
Detection of position and edge
Detection of paper, film and cloth
Start, end mark detection of magnetic tape
1
2
3
4
Pin connection
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
VR
3
V
mA
mW
mA
V
Input (Light
IF
50
75
20
30
5
emitting diode)
*1
PD
IC
Collector to emitter voltage VCEO
Output (Photo
transistor)
Emitter to collector voltage VECO
V
*1 Input power derating ratio is
*2
Collector power dissipation PC
50
mW
˚C
1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
Operating ambient temperature
Topr –25 to +85
Temperature
0.67 mW/˚C at Ta ≥ 25˚C.
Storage temperature
Tstg –30 to +100 ˚C
Electrical Characteristics (Ta = 25˚C)
Paramwter
Symbol
VF
Conditions
min
typ
1.3
max
1.5
Unit
V
Forward voltage (DC)
Reverse current (DC)
Capacitance between terminals
IF = 50mA
VR = 3V
Input
IR
0.01
30
10
µA
pF
characteristics
Ct
VR = 0V, f = 1MHz
Output characteristics Collector cutoff current
ICEO VCE = 10V
200
880
200
nA
µA
nA
µs
*1, *2
Collector current
IC
VCC = 5V, IF = 10mA, RL = 100Ω, d = 1mm
90
Leakage current
Response time
ID
VCC = 5V, IF = 10mA, RL = 100Ω
Transfer
tr*3 , tf*4 VCC = 5V, IC = 0.1mA, RL = 100Ω
20
characteristics
Collector to emitter saturation voltage VCE(sat) IF = 20mA, IC = 0.1mA
0.4
V
*1 IC classifications
Class
*2 Output current measurement method
Evaporated Al
Q
R
S
Glass plate
(t = 1mm)
IC (µA)
90 to 220
180 to 440
360 to 880
*3 Time required for the output current to increase from 10% to 90% of its final value
*4 Time required for the output current to decrease from 90% to 10% of its initial value
RL
IC
IF
VCC
1
CNB1302
Reflective Photosensors (Photo Reflectors)
IF , IC — Ta
IF — VF
VF — Ta
60
60
50
40
30
20
10
0
1.6
1.2
0.8
0.4
0
Ta = 25˚C
IF = 50mA
50
IF
10mA
1mA
40
30
20
IC
10
0
– 25
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
2.4
– 40 – 20
0
20
40
60
80 100
Ambient temperature Ta (˚C )
Forward voltage VF (V)
Ambient temperature Ta (˚C )
IC — IF
IC — VCE
IC — Ta
800
600
500
400
300
200
100
0
160
120
80
40
0
d = 1mm
Ta = 25˚C
VCE = 5V
Ta = 25˚C
RL = 100Ω
VCC = 5V
IF = 10mA
RL = 100Ω
IF = 20mA
d = 1mm
600
400
200
0
15mA
10mA
8mA
6mA
4mA
2mA
0
8
16
24
0
2
4
6
8
– 40 – 20
0
20
40
60
80 100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (˚C )
I
CEO — Ta
tr , tf — IC
IC — d
10
1
10 3
10 2
100
80
60
40
20
0
VCE = 10V
VCC = 5V
Ta = 25˚C
IF = 10mA
V
CC = 5V
Ta = 25˚C
: tr
: tf
RL = 2kΩ
1kΩ
d
10 –1
10 –2
10 –3
10 –4
10
1
100Ω
10 –1
– 40 – 20
0
20
40
60
80 100
10 –2
10 –1
Collector current IC (mA)
1
10
0
2
4
6
8
10
Ambient temperature Ta (˚C )
Distance d (mm)
2
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