PGA26E07BA [PANASONIC]
600V/70mΩGaNPower Transistor;
| 型号： | PGA26E07BA |
| 厂家： | 
PANASONIC |
| 描述： | 600V/70mΩGaNPower Transistor |
| 文件： | 总2页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRODUCT OVERVIEW
PGA26E07BA
D
G
S
600V/70mΩ GaN Power Transistor
PGA26E07BA Product Overview
Overview
Panasonic’s GaN power transistors offer superior device
performances enabling higher power conversion efficiency and
higher power density of power electronic systems than those by
conventional Si-based power devices.
Features
– Crystal growth of GaN on 6-inch silicon substrate.
– 600V enhancement mode power switch Normally-Off operation
with single GaN device by Panasonic’s proprietary
GIT: Gate Injection Transistor technology.
– Extremely high-speed switching characteristics.
– Current Collapse Free 600V and more.
– Zero recovery loss characteristics.
Applications
– Power supply for AC-DC (PFC, Isolated DC-DC)
– Battery charger system
– Photovoltaic power converter, Motor inverter
Absolute Maximum Ratings (Tj=25℃, unless otherwise specified)
Item
Symbol
VDSS
VDSP
IG
Ratings
Unit
V
Drain-source voltage(DC)
600
750
Drain-source voltage( pulse)
Gate current( DC )
V
50
mA
A
Drain current (DC) (Tc=25℃)
Junction temperature
ID
26
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
Note） All conditions should be within 150℃ Tj.
Thermal Characteristics (Typical values, unless otherwise specified)
Item
Thermal resistance (junction to case)
Thermal resistance (junction to ambient)
Power dissipation (Tc=25℃)
Symbol
Rth(j-c)
Rth(j-a)
PD
Ratings
max 1.3
max 46
96
Unit
℃/W
℃/W
W
Publication date: Mar 2017
Page 1 of 2
PRODUCT OVERVIEW
PGA26E07BA
Electrical Characteristics (Typical values at Tj=25℃, unless otherwise specified)
Item
Symbol
Condition
Value Unit
VDS=600V, VGS=0V, Tj=25℃
VDS=600V, VGS=0V, Tj=150℃
max100
100
-1
uA
uA
uA
V
Drain cut-off current
IDSS
Gate-source leakage current
Gate threshold voltage
IGSS VGS= -3V, VDS=0V
VTH
VDS=10V, IDS=2.6mA
1.2
IGS=26.1mA, IDS=8A, Tj=25℃
IGS=26.1mA, IDS=8A, Tj=150℃
f=100 MHz, open drain
56
mΩ
mΩ
Ω
Drain-source on-state resistance
RDS(on)
110
0.6
Gate resistance
RG
Ciss
Coss
Crss
Input capacitance
405
pF
Output capacitance
VDS=400V, VGS=0V, f=1MHz
VDS=0V to 480V
71
pF
pF
Reverse transfer capacitance
0.4
Effective output capacitance
(energy related)
Co(er)
Co(tr)
87
pF
pF
Effective output capacitance
(time related)
106
Gate charge
Qg
5.0
0.9
2.6
1.7
2.1
0
nC
nC
nC
V
Gate-source charge
Gate-drain charge
Gate plateau voltage
Source-drain forward voltage
Reverse recovery charge
Output charge
Qgs
Qgd
VDD=400V, IDS=8A
Vplateau VDD=400V, IDS=8A
VSD
Qrr
VGS=0V,ISD=8A
V
nC
nC
VDS=400V, ISD=8A
Qoss
45
Package Outline
Unit: mm
Page 2 of 2
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