PN313 [PANASONIC]
Silicon planar type For optical control systems; 硅平面型对于光控系统
| 型号： | PN313 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon planar type For optical control systems |
| 文件： | 总3页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PIN Photodiodes
PNZ313 (PN313)
Silicon planar type
For optical control systems
Unit: mm
7.0 0.ꢀ
Anode mark (φ1.6)
■ Features
Device
center
• Fast response which is well suited to high speed modulated light
detection: tr , tf = 50 ns (typ.)
• High sensitivity, high reliability
• Peak emission wavelength matched with infrared light emitting
diodes: λp = 940 nm (typ.)
2-1.2 0.1ꢀ
2-0.6 0.1ꢀ
0.41 0.1ꢀ
• Wide detection area, wide half-power angle: θ = 65° (typ.)
• Adoption of visible light cutoff resin
2
1
ꢀ.08 0.2ꢀ
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage
Symbol
VR
Rating
30
Unit
V
1: Cathode
2: Anode
LSTFR102NC-001 Package
Power dissipation
PD
100
mW
°C
Operating ambient temperature
Storage temperature
Topr
Tstg
−30 to +80
−40 to +80
°C
■ Electrical-Optical Characteristics Ta = 25°C 3°C
Parameter
Symbol
Conditions
Min
Typ
5
Max
Unit
nA
µA
nm
ns
Dark current
ID
IL
λp
tr
VR = 10 V
50
1
Photocurrent *
VR = 10 V, L = 1 000 lx
VR = 10 V
35
50
940
50
50
5
Peak emission wavelength
2
Rise time *
VR = 10 V, RL = 1 kΩ
2
Fall time *
tf
ns
2
Rise time *
tr
VR = 10 V, RL = 100 kΩ
µs
2
Fall time *
tf
5
µs
Terminal capacitance
Half-power angle
Ct
θ
VR = 0 V, f = 1 MHz
70
65
pF
°
The angle from which photocurrent
becomes 50%
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. 1: Source: Tungsten (color temperature 2856 K)
*
2: Switching time measurement circuit
*
Sig. in
VR = 10 V
td: Delay time
(Input pulse)
tr: Rise time (Time required for the collector photocurrent
to increase from 10% to 90% of its final value)
λP = 800 nm
90%
10%
Sig. out
RL
(Output pulse)
tf
:
Fall time (Time required for the collector photocurrent
to decrease from 90% to 10% of its initial value)
50 Ω
td
tr
tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00033BED
1
PNZ313
PD Ta
IL L
ID Ta
120
100
80
60
40
20
0
103
102
10
103
102
10
VR = 10 V
Ta = 25°C
T = 2856 K
VR = 10 V
1
1
10−1
10−1
102
103
(
104
−40
0
40
80
)
−30
0
20
40
60
80
100
10
)
(
)
(
Illuminance L lx
Ambient temperature Ta °C
Ambient temperature Ta °C
∆IL Ta
Spectral sensitivity characteristics
Directivity characteristics
160
100
100
80
60
40
20
0
VR = 10 V
Ta = 25°C
VR = 10 V
L = 1000 lx
T = 2856 K
80
120
80
40
0
60
40
20
0
600
800
1000
(
1200
80
40
0
40
80
−40
0
40
80
(
)
)
( )
°
Ambient temperature Ta °C
Wavelength λ nm
Half-power angle θ
Ct VR
tr , tf RL
ID VR
100
80
60
40
20
0
102
102
Sig. in VR = 10 V
Sig.
out
RL
90%
10%
td
50 Ω
10
tr
tf
10
1
10−1
10−2
1
10−1
10−2
10−1
1
10
102
10−1
1
10
102
0
8
16
24
32
40
48
Reverse voltage VR (V)
Reverse voltage VR (V)
Load resistance RL (kΩ)
SHE00033BED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
相关型号：
©2020 ICPDF网 联系我们和版权申明