PUB4121 [PANASONIC]

Power Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10;
PUB4121
型号: PUB4121
厂家: PANASONIC    PANASONIC
描述:

Power Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10

开关 晶体管
文件: 总3页 (文件大小:92K)
中文:  中文翻译
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Power Transistor Arrays  
PUB4121 (PU4121), PUB4421 (PU4421)  
Silicon NPN triple diffusion planar type darlington  
For power amplification  
Unit: mm  
Features  
Built-in zener diode (30 V) between collector and base  
Small variation in withstand pressure  
25.3 0.2  
4.0 0.2  
Large energy handling capability  
High-speed switching  
PUB4121 (PU4121): NPN 4 elements  
PUB4421 (PU4421): NPN 2 elements × 2  
0.8 0.25  
0.5 0.15  
0.5 0.15  
1.0 0.25  
Absolute Maximum Ratings TC = 25°C  
2.54 0.2  
9 × 2.54 = 22.86 0.25  
Parameter  
Symbol  
Rating  
Unit  
V
1: Emitter  
2: Base  
3: Collector  
4: Base  
5: Collector  
6: Base  
7: Collector  
Collector-base voltage (Emitter open) VCBO  
30 5  
C 1.5 0.5  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
VCEO  
VEBO  
IC  
30 5  
V
1 2 3 4 5 6 7 8 9 10  
5
V
2
A
8: Base  
9: Collector  
10: Emitter  
SIP10-A1 Package  
Peak collector current  
Collector power dissipation  
Ta = 25°C  
ICP  
4
15  
A
PC  
W
3.5  
Junction temperature  
Tj  
150  
°C  
°C  
Storage temperature  
Tstg  
55 to +150  
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
VCEO  
ICBO  
Conditions  
Min  
Typ  
Max  
35  
Unit  
V
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
IC = 5 mA, IB = 0  
25  
VCB = 25 V, IE = 0  
VEB = 5 V, IC = 0  
VCE = 4 V, IC = 1 A  
VCE = 4 V, IC = 2 A  
100  
2
µA  
mA  
IEBO  
hFE1  
1000  
1000  
1
*
hFE2  
10000  
2.5  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
Turn-on time  
VCE(sat) IC = 2 A, IB = 8 mA  
VBE(sat) IC = 2 A, IB = 8 mA  
V
V
2.5  
fT  
ton  
tstg  
tf  
VCE = 10 V, IC = 0.5 A, f = 1 MHz  
20  
0.4  
3.0  
1.0  
MHz  
µs  
IC = 2 A  
Storage time  
IB1 = 8 mA, IB2 = −8 mA  
VCC = 20 V  
µs  
Fall time  
µs  
2
Energy handling capability *  
Es/b  
IC = 1.45 A, L = 100 mH, RBE = 100 100  
mJ  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Rank classification  
*
2: Es/b test circuit  
*
X
Mercury relay  
Rank  
Free  
P
Q
L
hFE  
1000 to 10000 2000 to 10 000 1000 to 5000  
Y
Z
RBE  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: March 2004  
SJK00064AED  
1
PUB4121, PUB4421  
Internal Connection  
PUB4121  
PC Ta  
20  
16  
( )  
( )  
2
1
TC = Ta  
3
5
7
9
With a 50 × 50 × 2 mm  
Al heat sink  
( )  
3
Without heat sink  
( )  
1
4
6
8
2
1
12  
8
10  
PUB4421  
( )  
2
3
5
7
9
( )  
3
4
4
6
8
2
1
0
0
40  
80  
120  
160  
10  
(
)
Ambient temperature Ta °C  
IC VCE  
VCE(sat) IC  
VBE(sat) IC  
100  
6
5
4
3
2
1
0
100  
10  
1
I
C / IB = 250  
I
C / IB = 250  
TC = 25°C  
10  
1
IB = 2.0 mA  
1.8 mA  
1.6 mA  
1.4 mA  
1.2 mA  
1.0 mA  
0.8 mA  
0.6 mA  
TC = 100°C  
25°C  
TC = −25°C  
100°C  
25°C  
25°C  
0.4 mA  
0.2 mA  
0.1  
0.1  
0.01  
0.01  
0.01  
0.01  
0
1
2
3
4
5
6
0.1  
1
10  
0.1  
1
10  
( )  
Collector current IC A  
(
)
Collector-emitter voltage VCE  
V
( )  
Collector current IC A  
hFE IC  
Guidance load characteristic  
Safe operation area  
105  
100  
10  
1
100  
IC / IB = 250  
RBE = 100 Ω  
TC = 25°C  
Non repetitve pulse  
(
)
TC = 25°C Per circuit  
TC = 100°C  
25°C  
104  
103  
102  
10  
1
ICP  
t = 1 ms  
100 mJ  
t = 10 ms  
25°C  
0.1  
0.1  
0.01  
0.01  
10  
0.01  
1
10  
100  
1000  
0.1  
1
10  
1
10  
100  
1000  
)
(
)
Coil L (mH  
(
)
V
Collector current IC  
A
Collector-emitter voltage VCE  
SJK00064AED  
2
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of  
the products or technical information described in this material and controlled under the "Foreign Exchange  
and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteristics and  
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right  
or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical  
information as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general elec-  
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-  
hold appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-  
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are  
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human  
body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without notice for  
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,  
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-  
tions satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-  
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not  
be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of  
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such  
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent  
physical injury, fire, social damages, for example, by using the products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life  
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually  
exchanged.  
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2003 SEP  

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