PUB4420Q [PANASONIC]

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10;
PUB4420Q
型号: PUB4420Q
厂家: PANASONIC    PANASONIC
描述:

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10

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文件: 总3页 (文件大小:206K)
中文:  中文翻译
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Power Transistor Arrays  
PUB4120 (PU4120), PUB4420 (PU4420)  
Silicon NPN triple diffusion planar type darlington  
For power amplification  
Unit: mm  
Complementary to PUB4220 (PU4220), PUB4520 (PU4520)  
25.3 0.2  
4.0 0.2  
Features  
High forward current transfer ratio hFE  
High-speed switching  
PUB4120 (PU4120): NPN 4 elements  
PUB4420 (PU4420): NPN 2 elements × 2  
0.5 0.15  
0.8 0.25  
0.5 0.15  
Absolute Maximum Ratings TC = 25°C  
1.0 0.25  
2.54 0.2  
Parameter  
Symbol  
Rang  
Unit  
V
9 × 2.54 = 22.86 0.25  
1: Emitter  
2: Base  
Collector-base voltage (Emitter open) VCBO  
1.5 0.5  
3: Collector  
4: Base  
5: Collector  
6: Base  
7: Collector  
8: Base  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
V
VEBO  
IC  
V
5
V
1 3 4 5 6 7 8 9 10  
4
A
Peak collector current  
Collector power dissipation  
Ta = °C  
ICP  
8
5  
A
9: Collector  
10:Emitter  
SIP10-A1 Package  
PC  
W
3.5  
Junction temperature  
Tj  
50  
°C  
°C  
Storage temperatre  
Tstg  
55 to +50  
ElectricaCharacteristics TC 3°C  
Parameter  
VCEO  
VBE  
Conditions  
Min  
Typ  
Max  
Unit  
V
Colctorr voltage (Bae open)  
ase-eoltage  
IC = 30 mA, IB = 0  
60  
VCE = 3 V, IC = 3 A  
VCB = 60 V, IE = 0  
VCE = 0 V, IB = 0  
VEB = 5 V, I= 0  
VCE = 3 V, IC = 0.5 A  
VCE = 3 V, IC = 3 A  
2.5  
200  
500  
2
V
Collctor-base cutoff currnt (Emitter en)  
ollector-emitter cutoff urren(Basopen)  
itter-base cutoff crrent (Collectr open)  
Forwtranser ratio  
ICBO  
µA  
µA  
mA  
ICEO  
IEO  
hFE1  
1000  
1000  
*
hFE2  
10000  
2.0  
Colleaturation voltage  
Transitioncy  
Turn-on time  
VCE(sat) IC = 3 A, IB = 12 mA  
V
MHz  
µs  
µs  
µs  
fT  
ton  
tstg  
tf  
VCE = 10 V, IC = 0.5 A, f = 1 MHz  
20  
0.5  
4.0  
1.0  
IC = 3 A  
Storage time  
IB1 = 12 mA, IB2 = −12 mA  
VCC = 50 V  
Fall time  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Free  
P
Q
hFE  
1000 to 10000 2000 to 10 000 1000 to 5000  
Internal Connection  
PUB4120  
PUB4420  
3
5
7
9
3
5
7
9
4
6
8
4
6
8
2
1
2
1
10  
10  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: March 2004  
SJK00063AED  
1
PUB4120, PUB4420  
PC Ta  
IC VCE  
IC VBE  
10  
8
10  
8
20  
( )  
( )  
1
2
TC = Ta  
VCE = 3 V  
TC = 25°C  
With a 50 × 50 × 2 mm  
Al heat sink  
IB = 4.0 mA  
3.5 mA  
3.0 mA  
2.5 mA  
( )  
3
Without heat sink  
16  
12  
8
( )  
1
TC = 100°C  
25°C  
2.0 mA  
1.5 mA  
6
6
25°C  
1.0 mA  
0.5 mA  
4
4
( )  
2
( )  
3
4
2
2
0
0
0
0
0.8  
1.6  
2.4  
3.2  
0
2
4
6
8
10  
0
40  
80  
120  
160  
(
)
V
(
)
( )  
Base-emitter voltage VBE V  
Collector-emitter voltage VCE  
Ambient temperature Ta °C  
VCE(sat) IC  
hFE IC  
Cob VCB  
100  
10  
1
105  
104  
103  
102  
104  
103  
102  
10  
I
C / IB = 250  
VCE = 3 V  
IE = 0  
f = 1 MHz  
TC = 25°C  
TC = 100°C  
25°C  
25°C  
25°C  
25°C  
TC = 100°C  
0.1  
0.01  
0.01  
10  
0.01  
1
0.1  
0.1  
1
10  
0.1  
1
10  
1
10  
100  
(
)
(
)
( )  
Collector-base voltage VCB V  
Collector current IC  
A
Collector current IC  
A
Safe operation area  
100  
Non repetitve pulse  
(
)
TC = 25°C Per circuit  
10  
1
ICP  
t = 10 ms  
t = 1 ms  
0.1  
0.01  
1
10  
100  
1000  
(
)
V
Collector-emitter voltage VCE  
SJK00063AED  
2
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita  
Electric Industrial Co., Ltd.  

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